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2SB1132-R-TP Equivalent & Substitute Parts
Part Overview
The 2SB1132-R-TP is a Surface Mount PNP Bipolar Junction Transistor manufactured by Micro Commercial Co, rated for 32V collector-emitter breakdown voltage and 1A maximum collector current. This component is classified as obsolete, which necessitates identification of active equivalent parts for ongoing production and maintenance applications. The device is housed in a SOT-89 package and complies with RoHS3 standards.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) Max | 1 | A |
| Voltage - Collector Emitter Breakdown (Max) | 32 | V |
| Power - Max | 500 | mW |
| Frequency - Transition | 150 | MHz |
| DC Current Gain (hFE) Min @ Ic, Vce | 180 @ 100mA, 2V | — |
| Operating Temperature Range | -55 to 150 | °C |
| Package / Case | TO-243AA (SOT-89) | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the 2SB1132-R-TP is determined by electrical and mechanical parameter compatibility within the PNP BJT category. The critical parameters for substitution are:
- Transistor Type: PNP configuration
- Current Rating: Maximum collector current of 1A or greater
- Voltage Rating: Collector-emitter breakdown voltage of 32V or greater
- Power Dissipation: Maximum power rating of 500mW or greater
- Package Type: Surface Mount SOT-89 form factor
- Frequency Performance: Transition frequency of 150MHz or greater
- DC Current Gain: Minimum hFE of 180 or greater at specified operating conditions
- Temperature Range: Operating range of -55°C to 150°C or greater
- Compliance: RoHS3 compliance required
The 2DB1132R-13 manufactured by Diodes Incorporated meets all substitution criteria and is classified as an active product, providing supply continuity for the obsolete 2SB1132-R-TP.
Parameter Comparison
| Parameter | 2SB1132-R-TP (Micro Commercial Co) | 2DB1132R-13 (Diodes Incorporated) | Compatibility |
|---|---|---|---|
| Transistor Type | PNP | PNP | Match |
| Current - Collector (Ic) Max | 1 A | 1 A | Match |
| Voltage - Collector Emitter Breakdown (Max) | 32 V | 32 V | Match |
| Vce Saturation (Max) | 500mV @ 100mA, 2A | 500mV @ 50mA, 500mA | Compatible |
| Current - Collector Cutoff (Max) | 500nA (ICBO) | 500nA (ICBO) | Match |
| DC Current Gain (hFE) Min | 180 @ 100mA, 2V | 180 @ 100mA, 3V | Compatible |
| Power - Max | 500 mW | 1 W | Substitute Exceeds |
| Frequency - Transition | 150 MHz | 190 MHz | Substitute Exceeds |
| Operating Temperature | -55°C to 150°C | -55°C to 150°C | Match |
| Package / Case | TO-243AA (SOT-89) | TO-243AA (SOT-89-3) | Compatible |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Match |
| Product Status | Obsolete | Active | Substitute Active |
Engineering Selection Recommendations
The 2DB1132R-13 is a direct functional equivalent for the obsolete 2SB1132-R-TP. Selection of this substitute part is supported by the following factors:
Electrical Equivalence: Both devices share identical maximum ratings for collector current (1A), collector-emitter breakdown voltage (32V), and collector cutoff current (500nA). DC current gain specifications are equivalent at the specified operating points.
Performance Enhancement: The 2DB1132R-13 provides superior performance characteristics, including increased maximum power dissipation (1W versus 500mW) and higher transition frequency (190MHz versus 150MHz), ensuring compatibility with existing circuit designs while providing additional operational margin.
Package Compatibility: Both parts utilize the SOT-89 surface mount package in the TO-243AA case style, enabling direct board-level substitution without layout modifications.
Compliance and Availability: The 2DB1132R-13 maintains RoHS3 compliance and is classified as an active product with substantial inventory availability (22,700 units), ensuring long-term supply continuity compared to the obsolete status of the original part.
Temperature Performance: Identical operating temperature range (-55°C to 150°C) ensures thermal performance equivalence across all application environments.
Frequently Asked Questions (FAQ)
Q: Can the 2DB1132R-13 be used as a direct replacement for the 2SB1132-R-TP in existing designs?
A: Yes. The 2DB1132R-13 meets or exceeds all electrical and mechanical parameters of the 2SB1132-R-TP. The SOT-89 package compatibility and identical pin configuration enable direct substitution without circuit redesign or board layout modification.
Q: What are the key differences between these two parts?
A: The primary differences are product status and performance ratings. The 2DB1132R-13 is an active product with enhanced power dissipation capability (1W versus 500mW) and higher transition frequency (190MHz versus 150MHz). Both parts maintain identical maximum voltage and current ratings.
Q: Are there any thermal considerations when substituting the 2DB1132R-13 for the 2SB1132-R-TP?
A: The 2DB1132R-13 has a higher maximum power rating (1W), which provides greater thermal headroom in the same package. This allows for improved reliability in power-dissipative applications. Operating temperature ranges are identical for both devices.
Q: Does the package designation difference (SOT-89 versus SOT-89-3) affect compatibility?
A: No. Both designations refer to the same physical package form factor (TO-243AA). The "-3" suffix in SOT-89-3 indicates a three-terminal configuration, which is standard for BJT transistors. Pin spacing and board footprint are identical.
Q: What is the significance of the 2DB1132R-13 being an active product?
A: Active product status ensures ongoing manufacturing, quality control, and supply availability. This contrasts with the obsolete status of the 2SB1132-R-TP, which has been discontinued and may face supply constraints or quality assurance limitations.
Q: Are there any compliance or certification differences between these parts?
A: Both parts are RoHS3 compliant. The 2DB1132R-13 additionally carries REACH Unaffected status. Both parts share identical ECCN (EAR99) and HTSUS classifications, indicating equivalent regulatory treatment.
Q: Can the 2DB1132R-13 be used in high-frequency applications?
A: Yes. The 2DB1132R-13 has a transition frequency of 190MHz, which exceeds the 150MHz specification of the 2SB1132-R-TP, making it suitable for applications requiring higher frequency performance.
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