2SB1116-L-TP Equivalent & Substitute Parts

Part Overview

The 2SB1116-L-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-23 package. This component operates at a maximum collector current of 1 A with a 50 V collector-emitter breakdown voltage and 350 mW power dissipation capability. The device is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain functional compatibility across critical electrical parameters including current handling, voltage ratings, and thermal characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	-
Current - Collector (Ic) Max	1	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max)	300 mV @ 50 mA, 1 A	-
Power - Max	350	mW
Frequency - Transition	70	MHz
Operating Temperature Range	-55 to 150	°C
Package / Case	SOT-23-3	-
Mounting Type	Surface Mount	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the 2SB1116-L-TP is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Transistor type: PNP configuration
Package: SOT-23-3 (TO-236-3, SC-59)
Mounting: Surface mount
Collector current rating: minimum 1 A
Collector-emitter breakdown voltage: minimum 50 V
RoHS3 compliance

Acceptable Parameter Variations: Substitute parts may exceed the original specifications in the following areas without compromising circuit functionality:

Collector-emitter breakdown voltage (higher ratings acceptable)
Power dissipation (higher ratings acceptable)
Transition frequency (higher ratings acceptable)
Operating temperature maximum (higher ratings acceptable)
DC current gain (hFE) variations within active region operation

Substitution Constraints: Substitute parts must not fall below the original 2SB1116-L-TP specifications for collector current or collector-emitter breakdown voltage. Vce saturation characteristics must remain within acceptable switching performance parameters for the intended application.

Parameter Comparison

Parameter	2SB1116-L-TP	2STR2160	DPBT8105-7	FMMT591ATC	PBSS5250THR
Manufacturer	Micro Commercial Co	STMicroelectronics	Diodes Incorporated	Diodes Incorporated	Nexperia USA Inc.
Product Status	Obsolete	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP
Current - Collector (Ic) Max	1 A	1 A	1 A	1 A	2 A
Voltage - Collector Emitter Breakdown (Max)	50 V	60 V	60 V	40 V	50 V
Vce Saturation (Max)	300 mV @ 50 mA, 1 A	480 mV @ 100 mA, 1 A	600 mV @ 100 mA, 1 A	500 mV @ 100 mA, 1 A	300 mV @ 200 mA, 2 A
Power - Max	350 mW	500 mW	600 mW	500 mW	700 mW
Frequency - Transition	70 MHz	Not specified	150 MHz	150 MHz	100 MHz
Operating Temperature (Max)	150°C	150°C	150°C	150°C	175°C
Package / Case	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

2STR2160 (STMicroelectronics)

The 2STR2160 is an active product offering direct functional equivalence to the 2SB1116-L-TP. Both devices share identical collector current (1 A) and similar collector-emitter breakdown voltage (60 V vs. 50 V). The 2STR2160 provides enhanced power dissipation (500 mW vs. 350 mW) and maintains ROHS3 compliance with unlimited moisture sensitivity rating. This substitute is suitable for applications where the original 50 V rating is not a critical constraint and higher power handling is beneficial.

DPBT8105-7 (Diodes Incorporated)

The DPBT8105-7 is an active product with 1 A collector current and 60 V breakdown voltage, exceeding the original specifications. This device features superior transition frequency (150 MHz vs. 70 MHz) and higher power dissipation (600 mW). The DPBT8105-7 is appropriate for high-frequency switching applications and provides extended operating temperature range (-55°C to 150°C). ROHS3 compliance and unlimited moisture sensitivity are maintained.

FMMT591ATC (Diodes Incorporated)

The FMMT591ATC is an active product with 1 A collector current but operates at a reduced maximum breakdown voltage of 40 V. This device is not suitable as a direct substitute for applications requiring the full 50 V rating. However, it offers high transition frequency (150 MHz) and is applicable to lower voltage circuit designs. ROHS3 compliance and unlimited moisture sensitivity are provided.

PBSS5250THR (Nexperia USA Inc.)

The PBSS5250THR is an active automotive-grade product with AEC-Q101 qualification. This device provides enhanced collector current (2 A vs. 1 A) and maintains the original 50 V breakdown voltage with identical Vce saturation characteristics (300 mV). The PBSS5250THR offers superior power dissipation (700 mW) and higher maximum operating temperature (175°C). This substitute is recommended for automotive applications and designs requiring higher current capacity. ROHS3 compliance and unlimited moisture sensitivity are maintained.

Frequently Asked Questions (FAQ)

Q: Can the 2STR2160 replace the 2SB1116-L-TP in all applications?

A: The 2STR2160 is functionally compatible for most applications. Both devices share the same collector current rating (1 A) and similar voltage characteristics (60 V vs. 50 V). The higher power dissipation of the 2STR2160 (500 mW vs. 350 mW) is advantageous. Verify that your circuit design does not depend on the specific 50 V breakdown voltage threshold.

Q: Why is the FMMT591ATC listed as a substitute if it has a lower voltage rating?

A: The FMMT591ATC is included as a substitute option for applications operating below 40 V. While it does not meet the full 50 V specification of the original part, it provides equivalent current handling and superior frequency performance for lower voltage designs. Circuit voltage requirements must be evaluated before selection.

Q: What is the primary advantage of the PBSS5250THR?

A: The PBSS5250THR provides automotive-grade qualification (AEC-Q101) with enhanced current capacity (2 A vs. 1 A) while maintaining the original 50 V breakdown voltage and identical saturation characteristics. The higher operating temperature maximum (175°C) and power dissipation (700 mW) make this device suitable for automotive and high-reliability applications.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts are packaged in SOT-23-3 (TO-236-3, SC-59) surface mount configuration, maintaining mechanical and thermal compatibility with the original 2SB1116-L-TP. Supplier device package designations may vary (SOT-23-3 vs. TO-236AB), but these represent equivalent physical packages.

Q: What is the significance of the transition frequency differences?

A: The transition frequency (fT) indicates the maximum frequency at which the transistor maintains useful gain. The original 2SB1116-L-TP operates at 70 MHz. Substitute parts with higher transition frequencies (DPBT8105-7 and FMMT591ATC at 150 MHz) are suitable for higher-speed switching applications. The 2STR2160 does not specify transition frequency but is suitable for the original application bandwidth.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), matching the environmental and regulatory requirements of the original 2SB1116-L-TP.

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