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2SB1073-Q-AP Equivalent & Substitute Parts
Part Overview
The 2SB1073-Q-AP is a Surface Mount PNP Bipolar Junction Transistor manufactured by Micro Commercial Co, rated for 20V collector-emitter breakdown voltage and 4A maximum collector current. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and production requirements. The part operates at a maximum junction temperature of 150°C with 1W power dissipation capability and is housed in a SOT-89 package configuration.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Maximum Collector Current (Ic) | 4 | A |
| Collector-Emitter Breakdown Voltage (Max) | 20 | V |
| Maximum Power Dissipation | 1 | W |
| Transition Frequency | 120 | MHz |
| Maximum Junction Temperature | 150 | °C |
| Mounting Type | Surface Mount | — |
| Package Type | SOT-89 (TO-243AA) | — |
| RoHS Compliance | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the 2SB1073-Q-AP is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Transistor polarity must remain PNP
- Collector-emitter breakdown voltage must equal or exceed 20V
- Maximum collector current must equal or exceed 4A
- Maximum power dissipation must equal or exceed 1W
- Operating temperature range must support 150°C junction temperature
Mechanical Compatibility Criteria:
- Surface Mount mounting type required
- Package footprint compatibility with SOT-89 (TO-243AA) configuration
Compliance Requirements:
- RoHS3 compliance maintained
- Moisture Sensitivity Level 1 (Unlimited) acceptable
The 2SB1302S-TD-E meets all substitution criteria with enhanced electrical performance characteristics while maintaining package compatibility and regulatory compliance.
Parameter Comparison
| Parameter | 2SB1073-Q-AP | 2SB1302S-TD-E | Unit |
|---|---|---|---|
| Manufacturer | Micro Commercial Co | onsemi | — |
| Transistor Type | PNP | PNP | — |
| Maximum Collector Current (Ic) | 4 | 5 | A |
| Collector-Emitter Breakdown Voltage (Max) | 20 | 20 | V |
| Vce Saturation (Max) | 1 | 0.5 | V |
| Maximum Power Dissipation | 1 | 1.3 | W |
| Transition Frequency | 120 | 320 | MHz |
| Maximum Junction Temperature | 150 | 150 | °C |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package Type | SOT-89 (TO-243AA) | PCP (TO-243AA) | — |
| RoHS Compliance | ROHS3 Compliant | ROHS3 Compliant | — |
| Product Status | Obsolete | Obsolete | — |
Engineering Selection Recommendations
The 2SB1302S-TD-E qualifies as a direct substitute for the 2SB1073-Q-AP based on the following engineering criteria:
Electrical Performance: The substitute part exceeds the original specification in collector current capacity (5A versus 4A), power dissipation (1.3W versus 1W), and transition frequency (320MHz versus 120MHz). The reduced saturation voltage (0.5V versus 1V) provides improved efficiency in switching applications. Both parts maintain identical collector-emitter breakdown voltage (20V) and maximum junction temperature (150°C).
Mechanical Compatibility: Both components utilize Surface Mount technology with TO-243AA package footprints, ensuring direct PCB layout compatibility without redesign requirements.
Regulatory Compliance: Both parts maintain ROHS3 compliance and Moisture Sensitivity Level 1 (Unlimited) classification, satisfying environmental and handling requirements. The substitute part carries additional REACH Unaffected status documentation.
Obsolescence Status: Both parts are classified as obsolete, indicating limited future availability. Selection between these alternatives should prioritize current inventory status and long-term supply chain planning.
Frequently Asked Questions (FAQ)
Q: Can the 2SB1302S-TD-E directly replace the 2SB1073-Q-AP without circuit modification?
A: Yes. The 2SB1302S-TD-E meets or exceeds all critical electrical parameters (voltage, current, power, temperature) and shares identical package footprint (TO-243AA). No circuit redesign is required for direct substitution in existing PCB layouts.
Q: What are the key differences between these two PNP transistors?
A: The 2SB1302S-TD-E provides enhanced performance with 25% higher collector current capacity (5A versus 4A), 30% greater power dissipation capability (1.3W versus 1W), and 2.67x higher transition frequency (320MHz versus 120MHz). Saturation voltage is reduced by 50% (0.5V versus 1V), improving switching efficiency.
Q: Are the package types identical?
A: Both parts use the TO-243AA package designation. The 2SB1073-Q-AP specifies SOT-89 supplier packaging, while the 2SB1302S-TD-E specifies PCP supplier packaging. Both configurations are mechanically and electrically compatible with identical PCB footprints.
Q: Do both parts meet the same compliance standards?
A: Yes. Both the 2SB1073-Q-AP and 2SB1302S-TD-E are ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). The 2SB1302S-TD-E includes additional REACH Unaffected documentation.
Q: What is the significance of the obsolete product status?
A: Obsolete classification indicates that both parts have reached end-of-life status with manufacturers. Existing inventory from authorized distributors represents the remaining supply. Long-term production planning should evaluate alternative non-obsolete PNP transistor solutions for future designs.
Q: Which parameter determines whether a substitute PNP transistor is acceptable?
A: Substitution eligibility is determined by: (1) matching transistor polarity (PNP), (2) collector-emitter breakdown voltage equal to or exceeding 20V, (3) maximum collector current equal to or exceeding 4A, (4) maximum power dissipation equal to or exceeding 1W, (5) compatible Surface Mount package footprint, and (6) maintained RoHS3 compliance.
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