2SB0940AP Equivalent & Substitute Parts

Part Overview

The 2SB0940AP is a PNP bipolar junction transistor manufactured by Panasonic Electronic Components, rated for 180 V collector-emitter breakdown voltage and 2 A maximum collector current. This device is packaged in a TO-220-3 Full Pack configuration for through-hole mounting applications requiring 2 W power dissipation capability.

The 2SB0940AP is classified as obsolete. Equivalent substitute parts are necessary for new designs, production continuity, and system maintenance where original components are no longer available from primary sources.

Substiute Parts

2SB0940AP

Panasonic Electronic ComponentsIn Stock: 10212SB0940AP Datasheet

Current PartRFQ

2SA1667

Sanken Electric USA Inc.In Stock: 77032SA1667 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SB0940AP is determined by the following critical parameters:

Mandatory Matching Criteria:

• Transistor Type: PNP
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Current - Collector (Ic) Max: 2 A (minimum requirement)
• Operating Temperature: 150°C (TJ)

Allowable Parameter Variations:

• Voltage - Collector Emitter Breakdown (Max): Equal to or greater than 180 V
• Power - Max: Equal to or greater than 2 W
• Frequency - Transition: Equal to or greater than 30 MHz

The 2SA1667 manufactured by Sanken Electric USA Inc. meets the mandatory matching criteria. However, this substitute exhibits reduced voltage rating (150 V versus 180 V) and reduced transition frequency (20 MHz versus 30 MHz), while providing increased power dissipation capability (25 W versus 2 W).

Parameter Comparison

Engineering Selection Recommendations

2SA1667 Substitution Considerations:

The 2SA1667 is an active product with current manufacturing availability (7600 Pcs in stock), providing supply continuity for applications previously using the obsolete 2SB0940AP. Both devices share identical collector current rating (2 A), operating temperature (150°C), mounting type (Through Hole), and package configuration (TO-220-3 Full Pack).

The 2SA1667 provides superior RoHS compliance status (ROHS3 Compliant versus RoHS non-compliant), supporting modern regulatory requirements for new designs and production environments.

Voltage Rating Differential:

The 2SA1667 operates at a maximum collector-emitter breakdown voltage of 150 V, compared to the 2SB0940AP specification of 180 V. Applications operating at voltages exceeding 150 V require design verification to confirm compatibility within the reduced voltage envelope.

Frequency Performance Differential:

The 2SA1667 transition frequency is specified at 20 MHz, compared to the 2SB0940AP specification of 30 MHz. Applications requiring switching speeds dependent on the 30 MHz transition frequency specification require circuit analysis to confirm acceptable performance at the reduced frequency rating.

Power Dissipation Advantage:

The 2SA1667 provides 25 W maximum power dissipation capability, compared to the 2SB0940AP specification of 2 W. This increased thermal capability provides design margin for applications with elevated power requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1667 directly replace the 2SB0940AP in all applications?

A: The 2SA1667 shares the same transistor type (PNP), collector current rating (2 A), operating temperature (150°C), mounting type (Through Hole), and package configuration (TO-220-3 Full Pack). However, the 2SA1667 operates at a reduced maximum collector-emitter breakdown voltage (150 V versus 180 V) and reduced transition frequency (20 MHz versus 30 MHz). Applications operating above 150 V or requiring 30 MHz switching performance require circuit-level evaluation.

Q: What is the significance of the voltage rating difference between these parts?

A: The 2SB0940AP is rated for 180 V maximum collector-emitter breakdown voltage, while the 2SA1667 is rated for 150 V. In applications where the circuit operates at voltages between 150 V and 180 V, the 2SA1667 may not provide adequate voltage margin. Circuit design review is necessary to confirm operation within the 150 V envelope.

Q: How does the transition frequency difference affect circuit performance?

A: The 2SB0940AP specifies 30 MHz transition frequency, while the 2SA1667 specifies 20 MHz. In high-frequency switching applications, the reduced transition frequency may result in slower switching response. Applications dependent on the 30 MHz specification require performance analysis to confirm acceptable operation at 20 MHz.

Q: Are both parts available in the same package configuration?

A: Yes. Both the 2SB0940AP and 2SA1667 are packaged in TO-220-3 Full Pack configuration for through-hole mounting. PCB layout and thermal management considerations remain consistent between these devices.

Q: What is the RoHS compliance status difference?

A: The 2SB0940AP is RoHS non-compliant, while the 2SA1667 is ROHS3 Compliant. For new designs and production environments subject to RoHS regulations, the 2SA1667 provides compliance support.

Q: Does the 2SA1667 provide better thermal performance?

A: The 2SA1667 is rated for 25 W maximum power dissipation, compared to the 2SB0940AP specification of 2 W. This increased power rating provides greater thermal capability and design margin for applications with elevated power requirements.

Q: Are the DC current gain specifications equivalent?

A: No. The 2SB0940AP specifies minimum DC current gain (hFE) of 100 at 150 mA collector current and 10 V collector-emitter voltage. The 2SA1667 specifies minimum DC current gain of 60 at 700 mA collector current and 10 V collector-emitter voltage. Applications dependent on specific current gain characteristics require circuit analysis to confirm acceptable performance.