2SA965-Y(T6CANO,FM Equivalent & Substitute Parts

Part Overview

The 2SA965-Y(T6CANO,FM is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This device operates at 120 V collector-emitter breakdown voltage with a maximum collector current of 800 mA and delivers 900 mW power dissipation in a through-hole TO-92MOD package.

The 2SA965-Y(T6CANO,FM is classified as obsolete. Locating equivalent substitute parts becomes necessary for ongoing production support, maintenance applications, and design continuity when original inventory becomes unavailable.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	800	mA
Voltage - Collector Emitter Breakdown (Max)	120	V
Vce Saturation (Max) @ Ib, Ic	1 V @ 50 mA, 500 mA	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100 mA, 5 V	—
Power - Max	900	mW
Frequency - Transition	120	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3 Long Body	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SA965-Y(T6CANO,FM is determined by electrical parameter equivalence across the following critical specifications:

Electrical Equivalence Criteria:

Transistor polarity: PNP configuration
Maximum collector current: 800 mA
Collector-emitter breakdown voltage: 120 V
Vce saturation characteristics: 1 V @ 50 mA, 500 mA
Collector cutoff current: 100 nA (ICBO)
DC current gain (hFE): minimum 80 @ 100 mA, 5 V
Transition frequency: 120 MHz
Maximum junction temperature: 150 °C

The 2SA1201-Y(TE12L,ZC meets all electrical parameter requirements for functional substitution. This part maintains identical electrical specifications while differing in mounting technology and maximum power dissipation rating.

Parameter Comparison

Parameter	2SA965-Y(T6CANO,FM	2SA1201-Y(TE12L,ZC	Match Status
Transistor Type	PNP	PNP	Equivalent
Current - Collector (Ic) (Max)	800 mA	800 mA	Equivalent
Voltage - Collector Emitter Breakdown (Max)	120 V	120 V	Equivalent
Vce Saturation (Max) @ Ib, Ic	1 V @ 50 mA, 500 mA	1 V @ 50 mA, 500 mA	Equivalent
Current - Collector Cutoff (Max)	100 nA	100 nA	Equivalent
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100 mA, 5 V	80 @ 100 mA, 5 V	Equivalent
Frequency - Transition	120 MHz	120 MHz	Equivalent
Operating Temperature (TJ)	150 °C	150 °C	Equivalent
Power - Max	900 mW	500 mW	Substitute rated lower
Mounting Type	Through Hole	Surface Mount	Different
Package / Case	TO-226-3, TO-92-3 Long Body	TO-243AA	Different
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Equivalent

Engineering Selection Recommendations

The 2SA1201-Y(TE12L,ZC provides electrical substitution for the obsolete 2SA965-Y(T6CANO,FM across all critical transistor parameters. Both devices maintain identical electrical performance specifications for collector current, breakdown voltage, saturation characteristics, current gain, and transition frequency.

Product Status Consideration: The 2SA965-Y(T6CANO,FM is classified as obsolete, while the 2SA1201-Y(TE12L,ZC is active. The active status of the substitute part ensures ongoing availability and manufacturing support.

Compliance Status: The 2SA1201-Y(TE12L,ZC carries RoHS3 compliance certification, meeting current environmental regulatory requirements.

Packaging Transition: The primary distinction between these parts is the mounting technology. The original 2SA965-Y(T6CANO,FM uses through-hole TO-92MOD packaging, while the 2SA1201-Y(TE12L,ZC employs surface-mount PW-MINI (TO-243AA) packaging. This difference requires PCB redesign and assembly process modification.

Power Dissipation: The 2SA1201-Y(TE12L,ZC is rated for 500 mW maximum power dissipation, compared to 900 mW for the original part. Applications requiring sustained power dissipation above 500 mW require thermal analysis to confirm the substitute part operates within safe limits.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1201-Y(TE12L,ZC directly replace the 2SA965-Y(T6CANO,FM in existing through-hole PCB designs?

A: No. The 2SA1201-Y(TE12L,ZC uses surface-mount PW-MINI packaging while the original uses through-hole TO-92MOD packaging. PCB layout and assembly process modifications are required.

Q: Are the electrical characteristics identical between these two parts?

A: Yes. Both parts share identical specifications for collector current (800 mA), breakdown voltage (120 V), saturation voltage, current gain, and transition frequency (120 MHz).

Q: What is the significance of the different power ratings?

A: The 2SA965-Y(T6CANO,FM is rated for 900 mW while the 2SA1201-Y(TE12L,ZC is rated for 500 mW. Applications operating near the 900 mW limit require thermal evaluation to ensure the substitute part remains within safe operating conditions.

Q: Does the 2SA1201-Y(TE12L,ZC meet current environmental standards?

A: Yes. The 2SA1201-Y(TE12L,ZC carries RoHS3 compliance certification.

Q: What is the moisture sensitivity level for both parts?

A: Both parts are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Are both parts manufactured by the same company?

A: Yes. Both the 2SA965-Y(T6CANO,FM and 2SA1201-Y(TE12L,ZC are manufactured by Toshiba Semiconductor and Storage.

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