2SA2169-E Equivalent & Substitute Parts

Part Overview

The 2SA2169-E is a PNP bipolar junction transistor manufactured by onsemi, rated for 50V collector-emitter breakdown voltage and 10A maximum collector current. This component is designed for through-hole mounting in the TO-251-3 package configuration and delivers 950mW maximum power dissipation with a transition frequency of 130MHz.

The 2SA2169-E is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing production requirements, maintenance operations, and system redesigns where this component is specified in existing designs.

Substiute Parts

2SA2169-E

onsemiIn Stock: 94042SA2169-E Datasheet

Current PartRFQ

PHPT60410PYX

NXP SemiconductorsIn Stock: 37509PHPT60410PYX Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SA2169-E is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Transistor type must be PNP
• Collector current rating must equal or exceed 10A
• Collector-emitter breakdown voltage must equal or exceed 50V
• Power dissipation capability must support the application requirements
• DC current gain (hFE) must meet or exceed minimum specified values

Mechanical and Packaging Considerations:

• Mounting type compatibility (through-hole versus surface mount) affects circuit board integration
• Package footprint differences require board redesign or adapter solutions
• Lead configuration and thermal characteristics influence thermal management

The PHPT60410PYX is identified as a substitute part. However, this part exhibits a reduced collector-emitter breakdown voltage rating of 40V compared to the 2SA2169-E specification of 50V. This represents a voltage derating that must be evaluated against the actual operating conditions of the target application. The PHPT60410PYX maintains the 10A collector current rating and provides enhanced power dissipation (1.3W versus 950mW) and higher operating temperature capability (175°C versus 150°C). The transition frequency is reduced to 97MHz from 130MHz.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The 2SA2169-E is classified as obsolete, while the PHPT60410PYX maintains active production status with NXP Semiconductors. Active production status ensures continued availability and supply chain stability for future procurement requirements.

Compliance and Certifications: The 2SA2169-E carries ROHS3 compliance certification. The PHPT60410PYX compliance status is not specified in the provided data. Both parts are classified as EAR99 for export control purposes and are REACH unaffected.

Voltage Rating Consideration: The PHPT60410PYX operates at a maximum collector-emitter breakdown voltage of 40V, which is 10V lower than the 2SA2169-E specification of 50V. Applications operating at voltages approaching or exceeding 40V require detailed circuit analysis to confirm adequate safety margins and compliance with system voltage specifications.

Mounting Technology Impact: The 2SA2169-E uses through-hole mounting (TO-251-3 package), while the PHPT60410PYX uses surface-mount technology (LFPAK56/Power-SO8 package). Substitution requires printed circuit board redesign to accommodate the different footprint and mounting method.

Thermal and Frequency Characteristics: The PHPT60410PYX provides superior thermal capability (175°C operating temperature versus 150°C) and higher power dissipation rating (1.3W versus 950mW). However, the transition frequency is reduced to 97MHz from 130MHz, which may impact high-frequency switching applications.

Frequently Asked Questions (FAQ)

Q: Can the PHPT60410PYX directly replace the 2SA2169-E without circuit board modification?

A: No. The PHPT60410PYX uses surface-mount packaging (LFPAK56) while the 2SA2169-E uses through-hole packaging (TO-251-3). Direct replacement requires printed circuit board redesign to accommodate the different footprint, lead configuration, and mounting method.

Q: What is the significance of the 10V voltage rating difference between these parts?

A: The PHPT60410PYX is rated for 40V maximum collector-emitter breakdown voltage compared to the 2SA2169-E specification of 50V. Applications must operate within the 40V limit of the substitute part. If the circuit design requires operation at voltages between 40V and 50V, the PHPT60410PYX is not suitable without circuit modification.

Q: Are both parts suitable for high-frequency switching applications?

A: The 2SA2169-E has a transition frequency of 130MHz, while the PHPT60410PYX operates at 97MHz. Applications requiring switching frequencies above 97MHz may experience performance degradation with the substitute part. Frequency-dependent circuit behavior must be evaluated during substitution analysis.

Q: What are the thermal management differences between these transistors?

A: The PHPT60410PYX provides higher power dissipation capability (1.3W versus 950mW) and operates at higher junction temperatures (175°C versus 150°C). These characteristics may reduce thermal management requirements in applications with significant power dissipation, but the surface-mount package may require different thermal interface design compared to the through-hole package.

Q: Is the PHPT60410PYX currently available for procurement?

A: Yes. The PHPT60410PYX maintains active product status with NXP Semiconductors, ensuring ongoing manufacturing and supply chain availability. The 2SA2169-E is obsolete and subject to limited availability through remaining inventory channels.

Q: What collector current characteristics should be verified during substitution?

A: Both parts are rated for 10A maximum collector current. However, the DC current gain (hFE) specifications differ: the 2SA2169-E specifies 200 minimum at 1A and 2V, while the PHPT60410PYX specifies 240 minimum at 500mA and 2V. Circuit designs dependent on specific current gain values at particular operating points require verification against the substitute part's gain characteristics.