2SA2126-S-TL-E Equivalent & Substitute Parts

Part Overview

The 2SA2126-S-TL-E is an obsolete PNP bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 3 A maximum collector current. This surface mount device in TO-252-3 (DPAK) packaging delivers 800 mW power dissipation with a transition frequency of 390 MHz. The product status of obsolete necessitates identification of equivalent and substitute components for ongoing design support and production continuity. Substitute parts are selected based on matching or exceeding critical electrical parameters including collector current rating, voltage rating, power dissipation, and package compatibility.

Substiute Parts

2SA2126-S-TL-E
onsemiIn Stock: 150432SA2126-S-TL-E Datasheet
2SA2126-S-TL-E
Current Part
2SB1202T-TL-E
onsemiIn Stock: 132602SB1202T-TL-E Datasheet
2SB1202T-TL-E
Direct
2SB1201T-TL-E
onsemiIn Stock: 47192SB1201T-TL-E Datasheet
2SB1201T-TL-E
Similar
2SA2126-TL-E
onsemiIn Stock: 63592SA2126-TL-E Datasheet
2SA2126-TL-E
Parametric Equivalent
2SA2126-TL-H
onsemiIn Stock: 21102SA2126-TL-H Datasheet
2SA2126-TL-H
Parametric Equivalent
2DB1184Q-13
Diodes IncorporatedIn Stock: 195892DB1184Q-13 Datasheet
2DB1184Q-13
Similar
2SAR572DGTL
Rohm SemiconductorIn Stock: 52172SAR572DGTL Datasheet
2SAR572DGTL
Similar
2SB1184-P-TP
Micro Commercial CoIn Stock: 8592SB1184-P-TP Datasheet
2SB1184-P-TP
Similar
2SB1184-Q-TP
Micro Commercial CoIn Stock: 9342SB1184-Q-TP Datasheet
2SB1184-Q-TP
Similar
2SB1184-R-TP
Micro Commercial CoIn Stock: 8662SB1184-R-TP Datasheet
2SB1184-R-TP
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 3 A
Power - Max 800 mW
Frequency - Transition 390 MHz
Vce Saturation (Max) @ Ib, Ic 520 mV @ 100 mA, 2 A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100 mA, 2 V
Operating Temperature (Max) 150 °C
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 2SA2126-S-TL-E are classified into three categories based on electrical and mechanical compatibility:

Parametric Equivalents maintain identical or superior ratings across all critical parameters: 50 V collector-emitter breakdown voltage, 3 A maximum collector current, 800 mW power dissipation, 390 MHz transition frequency, and TO-252-3 package. These parts are direct functional replacements with no circuit redesign required.

Direct Manufacturer Substitutes share the same 50 V and 3 A ratings but differ in secondary parameters such as transition frequency (150 MHz versus 390 MHz), power dissipation (1 W versus 800 mW), or Vce saturation characteristics (700 mV versus 520 mV). These parts are suitable for applications where the lower frequency specification does not compromise circuit performance.

Similar Manufacturer Substitutes maintain the 50 V voltage rating and 3 A current rating but originate from different manufacturers (Diodes Incorporated, Rohm Semiconductor, Micro Commercial Co) or feature modified electrical characteristics. Parts in this category are compatible when application requirements permit tolerance of differences in transition frequency, power dissipation, or DC current gain.

Substitution Criteria:

  • Collector-emitter breakdown voltage: minimum 50 V
  • Maximum collector current: minimum 3 A
  • Package type: TO-252-3 (DPAK) surface mount
  • Operating temperature: 150°C maximum
  • RoHS3 compliance and REACH unaffected status

Parameter Comparison

Part Number Manufacturer Ic (Max) Vce(BR) Power (Max) Frequency Vce Sat @ Ib, Ic hFE (Min) Product Status Package
2SA2126-S-TL-E onsemi 3 A 50 V 800 mW 390 MHz 520 mV @ 100 mA, 2 A 200 @ 100 mA, 2 V Obsolete TO-252-3
2SA2126-TL-E onsemi 3 A 50 V 800 mW 390 MHz 520 mV @ 100 mA, 2 A 200 @ 100 mA, 2 V Active TO-252-3
2SA2126-TL-H onsemi 3 A 50 V 800 mW 390 MHz 520 mV @ 100 mA, 2 A 200 @ 100 mA, 2 V Obsolete TO-252-3
2SB1202T-TL-E onsemi 3 A 50 V 1 W 150 MHz 700 mV @ 100 mA, 2 A 200 @ 100 mA, 2 V Obsolete TO-252-3
2SB1201T-TL-E onsemi 2 A 50 V 800 mW 150 MHz 700 mV @ 50 mA, 1 A 200 @ 100 mA, 2 V Obsolete TO-252-3
2DB1184Q-13 Diodes Incorporated 3 A 50 V 15 W 110 MHz 1 V @ 200 mA, 2 A 120 @ 500 mA, 3 V Active TO-252-3
2SB1184-R-TP Micro Commercial Co 3 A 50 V 1 W 70 MHz 1 V @ 200 mA, 2 A 82 @ 500 mA, 3 V Active TO-252-3
2SB1184-Q-TP Micro Commercial Co 3 A 50 V 1 W 70 MHz 1 V @ 200 mA, 2 A 82 @ 500 mA, 3 V Active TO-252-3
2SB1184-P-TP Micro Commercial Co 3 A 50 V 1 W 70 MHz 1 V @ 200 mA, 2 A 82 @ 500 mA, 3 V Active TO-252-3
2SAR572DGTL Rohm Semiconductor 5 A 30 V 10 W 300 MHz 400 mV @ 100 mA, 2 A 200 @ 500 mA, 3 V Active TO-252-3

Engineering Selection Recommendations

Primary Recommendation: 2SA2126-TL-E

The 2SA2126-TL-E is the optimal substitute for the obsolete 2SA2126-S-TL-E. This onsemi part maintains identical electrical specifications across all critical parameters: 3 A collector current, 50 V breakdown voltage, 800 mW power dissipation, 390 MHz transition frequency, and 520 mV Vce saturation. The part carries Active product status, ensuring long-term availability and supply chain continuity. Both parts are ROHS3 compliant and REACH unaffected. The only difference is packaging format (Tape & Reel versus Cut Tape & Digi-Reel), which does not affect electrical performance or circuit compatibility.

Secondary Recommendation: 2SB1202T-TL-E

The 2SB1202T-TL-E is suitable for applications where transition frequency requirements are less stringent. This onsemi part matches the 3 A and 50 V ratings but operates at 150 MHz (versus 390 MHz) and provides 1 W power dissipation (versus 800 mW). The higher power rating and increased Vce saturation (700 mV) require circuit evaluation to confirm compatibility. ROHS3 compliance and REACH unaffected status are maintained.

Alternative Recommendation: 2DB1184Q-13

The 2DB1184Q-13 from Diodes Incorporated provides 3 A and 50 V ratings with superior 15 W power dissipation capability. This Active product offers extended operating temperature range (-55°C to 150°C) and higher inventory availability. The lower transition frequency (110 MHz) and reduced DC current gain (120 versus 200) require application-specific evaluation. ROHS3 compliance is confirmed.

Not Recommended: 2SB1201T-TL-E and 2SAR572DGTL

The 2SB1201T-TL-E is limited to 2 A maximum collector current, below the 3 A requirement of the main part. The 2SAR572DGTL features only 30 V breakdown voltage, insufficient for 50 V applications. These parts are unsuitable for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can 2SA2126-TL-E directly replace 2SA2126-S-TL-E without circuit modification?

A: Yes. The 2SA2126-TL-E is a parametric equivalent with identical electrical specifications. The difference in packaging format (Tape & Reel versus Cut Tape & Digi-Reel) does not affect circuit performance or board-level compatibility.

Q: What is the primary difference between 2SA2126-TL-E and 2SB1202T-TL-E?

A: The 2SA2126-TL-E operates at 390 MHz transition frequency with 520 mV Vce saturation, while the 2SB1202T-TL-E operates at 150 MHz with 700 mV Vce saturation. Both maintain 3 A and 50 V ratings. Selection depends on circuit frequency requirements and saturation voltage tolerance.

Q: Are all substitute parts ROHS3 compliant?

A: All listed substitute parts are ROHS3 compliant and REACH unaffected, with the exception of 2SB1184-P-TP, which does not specify RoHS status in the provided data.

Q: Can 2SB1201T-TL-E be used in place of 2SA2126-S-TL-E?

A: No. The 2SB1201T-TL-E is rated for maximum 2 A collector current, below the 3 A specification of the main part. This part is unsuitable for applications requiring 3 A operation.

Q: What is the advantage of 2DB1184Q-13 over other substitutes?

A: The 2DB1184Q-13 provides 15 W power dissipation (versus 800 mW to 1 W in other substitutes) and extended operating temperature range (-55°C to 150°C). This part is suitable for high-power applications where thermal margin is critical. However, the lower transition frequency (110 MHz) and reduced DC current gain (120) require verification against circuit specifications.

Q: Why is 2SAR572DGTL not recommended as a substitute?

A: The 2SAR572DGTL is rated for only 30 V collector-emitter breakdown voltage, below the 50 V requirement of the main part. This voltage limitation makes it unsuitable for circuits designed for 50 V operation.

Q: Are packaging differences between substitute parts significant?

A: All substitute parts use TO-252-3 (DPAK) surface mount packaging, ensuring mechanical and thermal compatibility. Differences in packaging format (Tape & Reel, Cut Tape & Digi-Reel, or Bulk) affect supply chain logistics but not circuit performance.

Q: What is the significance of DC current gain (hFE) differences among substitutes?

A: The main part specifies hFE minimum of 200 at 100 mA and 2 V. Substitutes from Micro Commercial Co (2SB1184 series) specify hFE minimum of 82 at 500 mA and 3 V, representing lower gain at different test conditions. Applications sensitive to current gain variation require circuit analysis to confirm compatibility.

Q: Can 2SB1184-R-TP, 2SB1184-Q-TP, and 2SB1184-P-TP be used interchangeably?

A: Yes. These three Micro Commercial Co parts share identical electrical specifications (3 A, 50 V, 1 W, 70 MHz) and TO-252-3 packaging. Differences are limited to packaging format (Tape & Reel, Tape & Reel, and Bulk respectively) and do not affect circuit performance.

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