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2SA1980-Y-AP Equivalent & Substitute Parts
Part Overview
The 2SA1980-Y-AP is a Bipolar (BJT) Transistor with PNP polarity manufactured by Micro Commercial Co. This component is rated for 50 V collector-emitter breakdown voltage and 150 mA maximum collector current, housed in a Through Hole TO-92 package. The device is classified as Obsolete, making identification of equivalent substitute parts essential for ongoing design support and production continuity. Active alternatives with matching electrical and mechanical specifications are available to ensure uninterrupted component sourcing.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Operating Temperature (TJ) | 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the 2SA1980-Y-AP is determined by strict equivalence across the following electrical and mechanical parameters:
Critical Matching Parameters:
- Transistor polarity: PNP
- Maximum collector current: 150 mA
- Maximum collector-emitter breakdown voltage: 50 V
- Saturation voltage characteristics: 300mV @ 10mA, 100mA
- Collector cutoff current: 100nA (ICBO)
- DC current gain minimum: 120 @ 2mA, 6V
- Transition frequency: 80MHz
- Maximum operating junction temperature: 150°C
- Package type: TO-92-3 Through Hole
- Compliance: ROHS3 Compliant
The KSA1015YTA manufactured by onsemi meets all specified electrical parameters and mechanical requirements, providing direct functional equivalence for the obsolete 2SA1980-Y-AP.
Parameter Comparison
| Parameter | 2SA1980-Y-AP (Micro Commercial Co) | KSA1015YTA (onsemi) | Match Status |
|---|---|---|---|
| Transistor Type | PNP | PNP | Equivalent |
| Current - Collector (Ic) (Max) | 150 mA | 150 mA | Equivalent |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | Equivalent |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA | 300mV @ 10mA, 100mA | Equivalent |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) | Equivalent |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2A, 6V | 120 @ 2mA, 6V | Equivalent |
| Frequency - Transition | 80MHz | 80MHz | Equivalent |
| Operating Temperature (TJ) | 150°C | 150°C | Equivalent |
| Mounting Type | Through Hole | Through Hole | Equivalent |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Equivalent |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Equivalent |
| Product Status | Obsolete | Active | Substitute is Active |
Engineering Selection Recommendations
The KSA1015YTA is the direct substitute for the obsolete 2SA1980-Y-AP. Both components are ROHS3 compliant and share identical electrical specifications across all critical parameters. The KSA1015YTA maintains Active product status with established supply chain availability, eliminating sourcing constraints associated with the obsolete 2SA1980-Y-AP. Both devices are housed in the TO-92-3 Through Hole package with formed leads, ensuring mechanical and thermal compatibility in existing PCB layouts. The transition from 2SA1980-Y-AP to KSA1015YTA requires no circuit modifications or design alterations.
Frequently Asked Questions (FAQ)
Q: Can the KSA1015YTA directly replace the 2SA1980-Y-AP without circuit modifications?
A: Yes. The KSA1015YTA is electrically and mechanically equivalent to the 2SA1980-Y-AP across all specified parameters. No circuit design changes are required for direct substitution.
Q: Are the package dimensions identical between these two parts?
A: Both components use the TO-92-3 (TO-226AA) Through Hole package with formed leads. Physical dimensions and pin configurations are identical, ensuring compatibility with existing PCB layouts and through-hole assembly processes.
Q: What is the primary advantage of using KSA1015YTA over 2SA1980-Y-AP?
A: The KSA1015YTA maintains Active product status with established supply chain availability, whereas the 2SA1980-Y-AP is classified as Obsolete. This ensures long-term sourcing reliability and production continuity.
Q: Are both parts RoHS compliant?
A: Yes. Both the 2SA1980-Y-AP and KSA1015YTA are ROHS3 compliant, meeting environmental and regulatory requirements for electronic component manufacturing and distribution.
Q: Do these transistors have identical DC current gain specifications?
A: Both components specify a minimum DC current gain (hFE) of 120 at 6V collector-emitter voltage. The measurement conditions are equivalent for practical circuit design purposes.
Q: What is the maximum power dissipation for each device?
A: The 2SA1980-Y-AP is rated at 625 mW maximum power dissipation, while the KSA1015YTA is rated at 400 mW. Both ratings are sufficient for typical low-signal PNP switching and amplification applications within the specified current and voltage limits.
Q: Can these parts be used interchangeably in high-frequency applications?
A: Yes. Both components specify an 80MHz transition frequency, making them suitable for identical high-frequency switching and amplification applications.
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