2SA1980-G-AP Equivalent & Substitute Parts

Part Overview

The 2SA1980-G-AP is a Bipolar (BJT) Transistor with PNP polarity manufactured by Micro Commercial Co. This component is rated for 50 V collector-emitter breakdown voltage and 150 mA maximum collector current, housed in a Through Hole TO-92 package. The device is classified as Obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity. The 2SA1980-G-AP operates at a maximum junction temperature of 150°C and delivers 625 mW power dissipation capability.

Substiute Parts

2SA1980-G-AP
Micro Commercial CoIn Stock: 11312SA1980-G-AP Datasheet
2SA1980-G-AP
Current Part
KSA1015YTA
onsemiIn Stock: 59898KSA1015YTA Datasheet
KSA1015YTA
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100 nA
Power - Max 625 mW
Frequency - Transition 80 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2SA1980-G-AP is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Parameters (Must Match):

  • Transistor Type: PNP
  • Maximum Collector Current (Ic): 150 mA
  • Maximum Collector-Emitter Breakdown Voltage: 50 V
  • Vce Saturation: 300mV @ 10mA, 100mA
  • Collector Cutoff Current (ICBO): 100 nA
  • Transition Frequency: 80 MHz
  • Maximum Junction Temperature: 150°C

Mechanical Parameters (Must Match):

  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Compliance Parameters:

  • RoHS3 Compliance

The KSA1015YTA meets all specified electrical and mechanical parameters and is therefore a direct substitute for the 2SA1980-G-AP.

Parameter Comparison

Parameter 2SA1980-G-AP KSA1015YTA Match
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 150 mA 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100 nA 100 nA
Frequency - Transition 80 MHz 80 MHz
Operating Temperature (TJ) 150°C 150°C
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
RoHS Status ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Active

Engineering Selection Recommendations

The KSA1015YTA manufactured by onsemi is a direct electrical and mechanical equivalent to the 2SA1980-G-AP. Both components are ROHS3 compliant and share identical electrical specifications across all critical parameters including collector current, breakdown voltage, saturation characteristics, and frequency response.

The primary distinction between the two components is product status: the 2SA1980-G-AP is classified as Obsolete, while the KSA1015YTA maintains Active status. This status difference, combined with the KSA1015YTA's significantly higher inventory availability (59,815 units versus 1,068 units), establishes the KSA1015YTA as the preferred selection for new designs and ongoing production requirements.

Both components are housed in identical TO-92-3 Through Hole packages with formed leads, ensuring mechanical compatibility in existing PCB layouts and assembly processes. The KSA1015YTA is supplied in Cut Tape (CT) packaging format, which is standard for production environments.

Frequently Asked Questions (FAQ)

Q: Can the KSA1015YTA be used as a direct replacement for the 2SA1980-G-AP in existing designs?

A: Yes. The KSA1015YTA meets all electrical and mechanical specifications of the 2SA1980-G-AP. Both components are PNP transistors with identical maximum ratings for collector current (150 mA), collector-emitter breakdown voltage (50 V), saturation characteristics, and transition frequency (80 MHz). Both use the TO-92-3 Through Hole package with formed leads.

Q: Are there any differences in DC current gain between these components?

A: The DC current gain (hFE) specifications differ between the two components. The 2SA1980-G-AP specifies hFE (Min) of 200 @ 2A, 6V, while the KSA1015YTA specifies hFE (Min) of 120 @ 2mA, 6V. These measurements are taken at different collector current levels and therefore represent different operating points. Circuit designs must account for the actual operating conditions and hFE values at those conditions.

Q: What is the difference in power dissipation capability?

A: The 2SA1980-G-AP is rated for 625 mW maximum power dissipation, while the KSA1015YTA is rated for 400 mW. Designs operating near maximum power levels must verify that the KSA1015YTA's lower power rating remains acceptable for the intended application.

Q: Are both components RoHS compliant?

A: Yes. Both the 2SA1980-G-AP and KSA1015YTA are ROHS3 compliant, meeting environmental and regulatory requirements for lead-free manufacturing.

Q: Why is the 2SA1980-G-AP classified as Obsolete?

A: The 2SA1980-G-AP is marked as Obsolete by the manufacturer. The KSA1015YTA, manufactured by onsemi, maintains Active product status and is the recommended selection for new designs and production continuity.

Q: Are the packaging formats compatible?

A: Both components use the TO-92-3 Through Hole package with formed leads. The 2SA1980-G-AP is supplied in standard packaging, while the KSA1015YTA is supplied in Cut Tape (CT) format. Both are compatible with standard Through Hole PCB assembly processes.

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