2SA1972,F(J Equivalent & Substitute Parts

Part Overview

The 2SA1972,F(J is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This component operates at 400 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and dissipates up to 900 mW. The device is packaged in a through-hole TO-92MOD configuration.

The 2SA1972,F(J is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for legacy systems and new designs requiring equivalent electrical performance.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	400	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	900	mW
Frequency - Transition	35	MHz
DC Current Gain (hFE) (Min)	140	—
Operating Temperature (TJ)	150	°C
Vce Saturation (Max)	1	V
Current - Collector Cutoff (Max)	10	µA

Substitute Part Grouping Explanation

Substitution of the 2SA1972,F(J is determined by electrical parameter equivalence across the following critical specifications:

Electrical Equivalence Criteria:

Transistor type (PNP)
Collector-emitter breakdown voltage (400 V maximum)
Maximum collector current (500 mA)
DC current gain (hFE minimum of 140)
Transition frequency (35 MHz)
Vce saturation characteristics (1 V @ 10mA, 100mA)
Collector cutoff current (10 µA maximum)
Operating temperature range (150°C maximum junction temperature)

Mechanical Compatibility Considerations:

Mounting type (through-hole versus surface mount)
Package configuration (TO-92MOD versus alternative packages)

The 2SA1971(TE12L,F) meets all electrical parameter requirements for substitution. However, this part differs in mounting technology (surface mount versus through-hole) and power dissipation rating (500 mW versus 900 mW).

Parameter Comparison

Parameter	2SA1972,F(J	2SA1971(TE12L,F)	Unit
Transistor Type	PNP	PNP	—
Voltage - Collector Emitter Breakdown (Max)	400	400	V
Current - Collector (Ic) (Max)	500	500	mA
Power - Max	900	500	mW
Frequency - Transition	35	35	MHz
DC Current Gain (hFE) (Min)	140 @ 20mA, 5V	140 @ 100mA, 5V	—
Vce Saturation (Max)	1 @ 10mA, 100mA	1 @ 10mA, 100mA	V
Current - Collector Cutoff (Max)	10	10	µA
Operating Temperature (TJ)	150	150	°C
Mounting Type	Through Hole	Surface Mount	—
Package / Case	TO-226-3, TO-92-3 Long Body	TO-243AA	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

2SA1971(TE12L,F) as Substitute:

The 2SA1971(TE12L,F) is an active product from Toshiba Semiconductor and Storage and meets all electrical specifications of the 2SA1972,F(J. This part is RoHS3 compliant and carries unlimited moisture sensitivity level (MSL 1) classification.

Selection of the 2SA1971(TE12L,F) requires evaluation of the following factors:

Mounting Technology: The 2SA1971(TE12L,F) is a surface-mount device in PW-MINI package configuration, whereas the 2SA1972,F(J) is a through-hole TO-92MOD component. Circuit board redesign and assembly process modification are necessary for implementation.

Power Dissipation: The 2SA1971(TE12L,F) has a maximum power rating of 500 mW compared to 900 mW for the 2SA1972,F(J). Applications requiring sustained power dissipation above 500 mW require thermal analysis and potential design modification.

Product Status: The 2SA1971(TE12L,F) is an active product with established supply chain availability, whereas the 2SA1972,F(J) is obsolete. Long-term sourcing and production continuity favor the active substitute.

Compliance: Both parts carry identical ECCN (EAR99) and HTSUS (8541.21.0095) classifications.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1971(TE12L,F) directly replace the 2SA1972,F(J) in existing through-hole circuit boards?

A: No. The 2SA1971(TE12L,F) is a surface-mount device in PW-MINI package, while the 2SA1972,F(J) uses through-hole TO-92MOD packaging. Direct board-level substitution without circuit board redesign is not possible.

Q: Are the electrical characteristics of the 2SA1971(TE12L,F) equivalent to the 2SA1972,F(J)?

A: The electrical characteristics are equivalent across all critical parameters: 400 V breakdown voltage, 500 mA maximum collector current, 35 MHz transition frequency, 140 minimum DC current gain, and 1 V Vce saturation. Both devices operate to 150°C maximum junction temperature.

Q: What is the significance of the power rating difference between these parts?

A: The 2SA1972,F(J) dissipates up to 900 mW, while the 2SA1971(TE12L,F) dissipates up to 500 mW. Applications operating at sustained power levels between 500 mW and 900 mW require thermal analysis to confirm the substitute part operates within safe limits.

Q: Why is the 2SA1972,F(J) classified as obsolete?

A: The 2SA1972,F(J) is listed as obsolete by the manufacturer. The 2SA1971(TE12L,F) is an active product, indicating ongoing manufacturing and supply availability.

Q: Are there compliance or regulatory differences between these parts?

A: Both parts carry identical ECCN (EAR99) and HTSUS (8541.21.0095) classifications. The 2SA1971(TE12L,F) is RoHS3 compliant. Both parts have unlimited moisture sensitivity level (MSL 1).

Q: What is the difference in DC current gain measurement conditions?

A: The 2SA1972,F(J) specifies minimum hFE of 140 at 20 mA collector current and 5 V Vce. The 2SA1971(TE12L,F) specifies minimum hFE of 140 at 100 mA collector current and 5 V Vce. Both meet the 140 minimum specification, with measurement conditions differing at the specified test points.

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