2SA1955FVBTPL3Z Equivalent & Substitute Parts

Part Overview

The 2SA1955FVBTPL3Z is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This device operates at 12 V with a maximum collector current of 400 mA and dissipates up to 100 mW. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity.

Substiute Parts

2SA1955FVBTPL3Z

Toshiba Semiconductor and StorageIn Stock: 38182SA1955FVBTPL3Z Datasheet

Current PartRFQ

2SA2030T2L

Rohm SemiconductorIn Stock: 189722SA2030T2L Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SA1955FVBTPL3Z is determined by electrical and mechanical compatibility across the following parameters:

Critical Matching Parameters:

• Transistor polarity (PNP)
• Voltage rating (12 V Collector Emitter Breakdown minimum)
• Surface mount packaging (SOT-723)
• Moisture sensitivity level (MSL 1)

Allowable Parameter Variations:

• Collector current (Ic) may exceed 400 mA
• Power dissipation (Pmax) may exceed 100 mW
• Transition frequency (fT) may exceed 130 MHz
• DC current gain (hFE) may vary within device specifications
• Vce saturation characteristics may differ within rated parameters

The 2SA2030T2L qualifies as a substitute based on matching transistor type, voltage rating, package type, and MSL rating, while providing enhanced electrical performance in current handling and frequency response.

Parameter Comparison

Engineering Selection Recommendations

2SA2030T2L Substitution Assessment:

The 2SA2030T2L is a direct functional substitute for the 2SA1955FVBTPL3Z. Both devices share identical voltage ratings, package types, and moisture sensitivity classifications. The 2SA2030T2L maintains active product status with ROHS3 compliance and REACH unaffected designation, providing superior long-term availability compared to the obsolete 2SA1955FVBTPL3Z.

The substitute device provides enhanced electrical performance with 500 mA maximum collector current (versus 400 mA), 150 mW power dissipation (versus 100 mW), and 260 MHz transition frequency (versus 130 MHz). These parameter increases do not create incompatibility; they expand the operational envelope while maintaining saturation voltage and cutoff current specifications.

Pin-to-pin compatibility is maintained through identical SOT-723 packaging. No circuit modifications are required for direct substitution in applications operating within the original 2SA1955FVBTPL3Z specifications.

Frequently Asked Questions (FAQ)

Q: Can the 2SA2030T2L directly replace the 2SA1955FVBTPL3Z without circuit modification?

A: Yes. Both devices are PNP transistors in SOT-723 packages with identical 12 V voltage ratings, saturation voltage characteristics, and cutoff current specifications. Pin configuration and electrical behavior are compatible for direct substitution.

Q: What is the significance of the higher collector current rating on the 2SA2030T2L?

A: The 2SA2030T2L supports 500 mA maximum collector current compared to 400 mA on the 2SA1955FVBTPL3Z. This parameter increase does not affect compatibility; it indicates the substitute can handle higher current loads within the same voltage and package constraints. Applications limited to 400 mA operation remain fully supported.

Q: Are there differences in thermal performance between these devices?

A: Both devices operate at a maximum junction temperature of 150°C. The 2SA2030T2L provides 150 mW power dissipation capacity versus 100 mW on the 2SA1955FVBTPL3Z. In applications dissipating less than 100 mW, thermal performance is equivalent. Higher power applications benefit from the increased dissipation capability of the substitute.

Q: How does the transition frequency difference affect circuit performance?

A: The 2SA2030T2L operates at 260 MHz transition frequency compared to 130 MHz on the 2SA1955FVBTPL3Z. This parameter indicates faster switching capability on the substitute device. For applications operating below 130 MHz, this difference has no practical impact. Higher-frequency applications benefit from the enhanced frequency response.

Q: What is the DC current gain difference between these parts?

A: The 2SA1955FVBTPL3Z specifies minimum hFE of 300 at 10 mA and 2 V, while the 2SA2030T2L specifies 270 under identical conditions. This 30-unit difference falls within normal device variation for PNP transistors. Circuit designs accounting for typical hFE variation accommodate both devices without modification.

Q: Does the 2SA2030T2L have better compliance status?

A: Yes. The 2SA2030T2L carries active product status with ROHS3 compliance and REACH unaffected designation. The 2SA1955FVBTPL3Z is classified as obsolete. For new designs and long-term production support, the 2SA2030T2L provides superior supply chain continuity and regulatory compliance.

Q: Are the package dimensions identical between SOT-723 variants?

A: Both devices use SOT-723 packaging, which maintains standardized footprint and pin spacing. PCB layout compatibility is assured for direct substitution without redesign.