2SA1955FVATPL3Z Equivalent & Substitute Parts

Part Overview

The 2SA1955FVATPL3Z is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This device operates at 12 V collector-emitter breakdown voltage with a maximum collector current of 400 mA and 100 mW power dissipation. The transistor is packaged in SC-101/SOT-883 surface mount configuration.

The 2SA1955FVATPL3Z is classified as obsolete. Identification of equivalent and substitute parts is necessary to support ongoing production requirements, maintenance operations, and design continuity where this component is specified in existing applications.

Substiute Parts

2SA1955FVATPL3Z

Toshiba Semiconductor and StorageIn Stock: 33582SA1955FVATPL3Z Datasheet

Current PartRFQ

PBSS3515M,315

Nexperia USA Inc.In Stock: 5481PBSS3515M,315 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SA1955FVATPL3Z is determined by compatibility across the following critical parameters:

Transistor Type: The substitute must be a PNP bipolar junction transistor to maintain circuit polarity and biasing requirements.

Package and Mounting: The substitute must use SC-101/SOT-883 surface mount packaging to ensure mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Voltage Rating: The substitute must have a collector-emitter breakdown voltage rating equal to or greater than 12 V to operate safely within the application's voltage envelope.

Current Rating: The substitute must have a maximum collector current rating equal to or greater than 400 mA to handle the application's current demands.

Power Dissipation: The substitute must have a maximum power rating equal to or greater than 100 mW to accommodate thermal requirements.

Frequency Response: The substitute must have a transition frequency equal to or greater than 130 MHz to support the application's switching or amplification speed requirements.

Operating Temperature: The substitute must support a maximum junction temperature of 150 °C or higher.

Moisture Sensitivity: The substitute must have an MSL rating of 1 (Unlimited) to match handling and storage requirements.

The PBSS3515M,315 manufactured by Nexperia USA Inc. meets all substitution criteria and is classified as an active product.

Parameter Comparison

Engineering Selection Recommendations

The PBSS3515M,315 is a direct substitute for the 2SA1955FVATPL3Z based on the following engineering criteria:

Electrical Compatibility: The PBSS3515M,315 meets or exceeds all electrical specifications of the 2SA1955FVATPL3Z. The higher voltage rating (15 V vs. 12 V), increased current capacity (500 mA vs. 400 mA), and greater power dissipation capability (430 mW vs. 100 mW) provide operational margin within the application's design envelope.

Package Compatibility: Both devices use identical SC-101/SOT-883 surface mount packaging, ensuring direct PCB layout compatibility without redesign.

Product Status: The PBSS3515M,315 is classified as an active product with current manufacturing availability, addressing the obsolescence of the 2SA1955FVATPL3Z.

Compliance and Certifications: The PBSS3515M,315 is RoHS3 compliant and REACH unaffected, meeting current regulatory requirements. Both devices share identical ECCN (EAR99) and HTSUS (8541.21.0075) classifications.

Moisture Sensitivity: Both devices have MSL 1 (Unlimited) ratings, requiring no change to handling or storage procedures.

Frequently Asked Questions (FAQ)

Q: Can the PBSS3515M,315 be used as a direct replacement for the 2SA1955FVATPL3Z without circuit modification?

A: Yes. The PBSS3515M,315 is electrically and mechanically compatible with the 2SA1955FVATPL3Z. Both devices are PNP transistors in SC-101/SOT-883 packages with matching MSL ratings. The substitute's higher voltage, current, and power ratings operate within the application's design envelope.

Q: What are the key differences between these two transistors?

A: The PBSS3515M,315 has higher electrical ratings: 15 V breakdown voltage (vs. 12 V), 500 mA maximum collector current (vs. 400 mA), 430 mW power dissipation (vs. 100 mW), and 280 MHz transition frequency (vs. 130 MHz). The 2SA1955FVATPL3Z is obsolete; the PBSS3515M,315 is an active product.

Q: Are there any thermal considerations when substituting these parts?

A: Both devices have identical maximum junction temperatures of 150 °C. The PBSS3515M,315 has higher power dissipation capability (430 mW vs. 100 mW), which may reduce thermal stress in the application. Thermal design should be verified based on actual circuit operating conditions.

Q: Do these transistors require different handling or storage procedures?

A: No. Both devices have MSL 1 (Unlimited) ratings, indicating unlimited shelf life and no moisture sensitivity restrictions. Handling and storage procedures remain unchanged.

Q: Is the DC current gain (hFE) compatible between these devices?

A: The DC current gain specifications differ between the devices. The 2SA1955FVATPL3Z specifies hFE minimum of 300 @ 10 mA, 2 V. The PBSS3515M,315 specifies hFE minimum of 150 @ 100 mA, 2 V. Circuit designs relying on specific hFE values should be evaluated against the PBSS3515M,315 datasheet specifications.

Q: What is the packaging difference between Cut Tape (CT) and Tape & Reel (TR)?

A: Cut Tape (CT) is supplied in individual strips for manual handling or small-volume assembly. Tape & Reel (TR) is supplied on continuous reels for automated pick-and-place assembly. Both formats contain the same SC-101/SOT-883 component. Selection depends on assembly process requirements.