2SA1931,Q(J Equivalent & Substitute Parts

Part Overview

The 2SA1931,Q(J is a Bipolar (BJT) Transistor with PNP polarity manufactured by Toshiba Semiconductor and Storage. This through-hole component is rated for 50 V collector-emitter breakdown voltage and 5 A maximum collector current, with a maximum power dissipation of 2 W. The device is currently classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity. The TO-220-3 package configuration and electrical specifications define the scope for equivalent part selection.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	5	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Power - Max	2	W
Frequency - Transition	60	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the 2SA1931,Q(J is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

Transistor polarity must be PNP
Maximum collector current (Ic) must be ≥ 5 A
Maximum collector-emitter breakdown voltage (VCEO) must be ≥ 50 V
Maximum power dissipation must be ≥ 2 W
Operating temperature range must support 150°C (TJ)

Mechanical Compatibility Criteria:

Package type and pin configuration must be compatible with the application circuit
Mounting method (through-hole or surface-mount) must align with PCB design requirements

The 2SA2097(TE16L1,NQ) meets the electrical specifications for collector current, breakdown voltage, and operating temperature. However, this substitute employs surface-mount packaging (TO-252-3, DPAK) rather than through-hole mounting, requiring PCB redesign for direct substitution. The power rating of 1 W is lower than the original 2 W specification, restricting use to applications with reduced thermal demands.

Parameter Comparison

Parameter	2SA1931,Q(J	2SA2097(TE16L1,NQ)	Unit
Transistor Type	PNP	PNP	—
Current - Collector (Ic) (Max)	5	5	A
Voltage - Collector Emitter Breakdown (Max)	50	50	V
Vce Saturation (Max)	400 mV @ 200 mA, 2 A	270 mV @ 53 mA, 1.6 A	—
Current - Collector Cutoff (Max)	1 µA	100 nA	—
DC Current Gain (hFE) (Min)	100 @ 1 A, 1 V	200 @ 500 mA, 2 V	—
Power - Max	2	1	W
Operating Temperature (TJ)	150	150	°C
Mounting Type	Through Hole	Surface Mount	—
Package / Case	TO-220-3	TO-252-3, DPAK	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

2SA2097(TE16L1,NQ) Substitution Considerations:

The 2SA2097(TE16L1,NQ) is an active product from Toshiba Semiconductor and Storage with RoHS3 compliance, providing long-term availability compared to the obsolete 2SA1931,Q(J. The electrical parameters for collector current and breakdown voltage are equivalent. However, the following factors must be evaluated:

Mounting Architecture: The 2SA2097(TE16L1,NQ) uses surface-mount packaging (TO-252-3, DPAK), whereas the original component is through-hole (TO-220-3). PCB layout modification is required for direct substitution.
Power Dissipation: The 2SA2097(TE16L1,NQ) maximum power rating is 1 W, compared to 2 W for the 2SA1931,Q(J. Applications requiring sustained power dissipation above 1 W must be re-evaluated for thermal performance.
Saturation Characteristics: The 2SA2097(TE16L1,NQ) exhibits lower saturation voltage (270 mV) and higher DC current gain (200 minimum), indicating improved switching performance at reduced base current levels.
Regulatory Compliance: The 2SA2097(TE16L1,NQ) carries RoHS3 compliance certification, supporting modern supply chain and environmental requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SA2097(TE16L1,NQ) be used as a direct pin-for-pin replacement for the 2SA1931,Q(J?

A: No. While the electrical specifications for collector current (5 A) and breakdown voltage (50 V) are equivalent, the package types differ fundamentally. The 2SA1931,Q(J uses through-hole TO-220-3 mounting, whereas the 2SA2097(TE16L1,NQ) uses surface-mount TO-252-3 (DPAK) packaging. PCB redesign is required for substitution.

Q: What is the impact of the reduced power rating on the 2SA2097(TE16L1,NQ)?

A: The 2SA2097(TE16L1,NQ) has a maximum power dissipation of 1 W compared to 2 W for the 2SA1931,Q(J. Applications operating at sustained power levels between 1 W and 2 W must be re-evaluated. Thermal analysis of the specific application circuit is necessary to confirm compatibility.

Q: Are there differences in switching performance between these devices?

A: Yes. The 2SA2097(TE16L1,NQ) exhibits a lower saturation voltage (270 mV at specified conditions) and higher minimum DC current gain (200 versus 100), indicating faster switching transitions and reduced base drive requirements. These characteristics may improve circuit efficiency in switching applications.

Q: What is the significance of the product status difference?

A: The 2SA1931,Q(J is classified as obsolete, indicating discontinued manufacturing and limited future availability. The 2SA2097(TE16L1,NQ) is an active product with ongoing production, ensuring long-term supply chain continuity and support.

Q: Does the 2SA2097(TE16L1,NQ) meet current regulatory requirements?

A: Yes. The 2SA2097(TE16L1,NQ) carries RoHS3 compliance certification, meeting current environmental and regulatory standards for electronic components in most jurisdictions.

Q: What mounting considerations apply when substituting the 2SA2097(TE16L1,NQ)?

A: The TO-252-3 (DPAK) package requires surface-mount assembly processes and PCB footprint design compatible with SMD soldering. Through-hole assembly equipment and PCB layouts designed for TO-220-3 components cannot accommodate this substitute without redesign.

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