Equivalent & Substitute Parts Reference for 2SA1797T100Q

Part Overview

The 2SA1797T100Q by Rohm Semiconductor is a PNP Bipolar Junction Transistor (BJT) with a collector-emitter breakdown voltage of 50 V, a maximum collector current of 2 A, a transition frequency of 200 MHz, and a surface-mount TO-243AA package. This device is ROHS3 compliant and intended for high-speed switching and general-purpose amplification applications. The product status is "Not For New Designs," necessitating identification of direct substitute or alternative parts for continued production or design updates.

Substiute Parts

2SA1797T100Q
Rohm SemiconductorIn Stock: 203582SA1797T100Q Datasheet
2SA1797T100Q
Current Part
2DA1213Y-13
Diodes IncorporatedIn Stock: 1504242DA1213Y-13 Datasheet
2DA1213Y-13
Direct
PBSS5250X,115
Nexperia USA Inc.In Stock: 2300PBSS5250X,115 Datasheet
PBSS5250X,115
Direct
2DA1797-13
Diodes IncorporatedIn Stock: 479672DA1797-13 Datasheet
2DA1797-13
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2SA1213-Y-TP
Micro Commercial CoIn Stock: 26122SA1213-Y-TP Datasheet
2SA1213-Y-TP
Similar
2SB1123S-TD-E
onsemiIn Stock: 132982SB1123S-TD-E Datasheet
2SB1123S-TD-E
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2SB1123T-TD-E
onsemiIn Stock: 254872SB1123T-TD-E Datasheet
2SB1123T-TD-E
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DNLS350Y-13
Diodes IncorporatedIn Stock: 2654DNLS350Y-13 Datasheet
DNLS350Y-13
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DPLS350Y-13
Diodes IncorporatedIn Stock: 20421DPLS350Y-13 Datasheet
DPLS350Y-13
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Key Parameters

Parameter Value
Manufacturer Part Number 2SA1797T100Q
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V
Power - Max 2 W
Frequency - Transition 200MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution for the 2SA1797T100Q is based strictly on the following electrical and mechanical parameters:

  • Transistor Type (PNP)
  • Collector Current (Ic)
  • Collector-Emitter Breakdown Voltage (Vce)
  • DC Current Gain (hFE)
  • Vce Saturation Voltage
  • Transition Frequency (fT)
  • Package/Case (TO-243AA or SOT-89/SOT-89-3/PCP for mechanical compatibility)
  • Surface Mount capability
  • Power Dissipation rating
  • ROHS compliance and Moisture Sensitivity Level (MSL)

Only substitute parts matching or exceeding these criteria are included in this reference.

Parameter Comparison

Manufacturer Part Number Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Operating Temperature Mounting Type Package / Case RoHS Status MSL
2SA1797T100Q (Rohm) PNP 2 A 50 V 350mV @ 50mA, 1A 100nA 120 @ 500mA, 2V 2 W 200MHz 150°C (TJ) Surface Mount TO-243AA ROHS3 1
2DA1213Y-13 (Diodes Inc.) PNP 2 A 50 V 500mV @ 50mA, 1A 100nA 120 @ 500mA, 2V 1 W 160MHz -55°C ~ 150°C (TJ) Surface Mount TO-243AA/SOT-89-3 ROHS3 1
PBSS5250X,115 (Nexperia) PNP 2 A 50 V 320mV @ 200mA, 2A 100nA 200 @ 1A, 2V 1 W 100MHz 150°C (TJ) Surface Mount TO-243AA/SOT-89 ROHS3 1
2SA1213-Y-TP (Micro Commercial Co.) PNP 2 A 50 V 500mV @ 50mA, 1A 100nA 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) Surface Mount TO-243AA/SOT-89 ROHS3 1
2SB1123S-TD-E (onsemi) PNP 2 A 50 V 700mV @ 50mA, 1A 100nA 100 @ 100mA, 2V 0.5 W 150MHz 150°C (TJ) Surface Mount TO-243AA/PCP ROHS3 1
2SB1123T-TD-E (onsemi) PNP 2 A 50 V 700mV @ 50mA, 1A 100nA 200 @ 100mA, 2V 0.5 W 150MHz 150°C (TJ) Surface Mount TO-243AA/PCP ROHS3 1
DPLS350Y-13 (Diodes Inc.) PNP 3 A 50 V 390mV @ 300mA, 3A 100nA 200 @ 1A, 2V 1 W 100MHz -55°C ~ 150°C (TJ) Surface Mount TO-243AA/SOT-89-3 ROHS3 1

Engineering Selection Recommendations

Selection of substitute parts is governed by product status and compliance certifications. The main part, 2SA1797T100Q, is listed as "Not For New Designs," and all identified substitutes are "Active" and ROHS3 Compliant with MSL 1 (Unlimited). All alternatives fulfill provided compliance requirements and are suitable for selection where identical parameters are met.

Frequently Asked Questions (FAQ)

Q1: What parameters determine whether a substitute transistor is suitable for 2SA1797T100Q?
Suitability is determined strictly by matching transistor type (PNP), collector current (Ic), collector-emitter breakdown voltage (Vce), DC current gain (hFE), Vce saturation voltage, transition frequency (fT), package compatibility (TO-243AA/SOT-89/PCP), surface mount capability, power rating, and compliance with ROHS3 and MSL 1.

Q2: Can alternative package options (SOT-89-3, PCP) be used in place of TO-243AA?
Substitution is allowed where the package matches mechanical dimensions and mounting type for surface mount applications. Check the specified package/case parameter to ensure compatibility.

Q3: Are there any compliance differences among the listed substitutes?
All listed substitutes are ROHS3 compliant and rated MSL 1 (Unlimited). No functional compliance differences are stated in the provided data.

Q4: Do any substitutes offer higher performance characteristics?
Parameter differences include DC current gain, transition frequency, and power rating. Selection must be based on whether the key parameters required by the application are met as listed.

Q5: Is it necessary to consider product status for substitute selection?
All substitutes provided have an "Active" product status, whereas the original component is "Not For New Designs." Only active devices are recommended for new designs to ensure ongoing support and availability.

Q6: Are NPN transistors such as DNLS350Y-13 suitable as substitutes?
Only PNP transistor types are compatible for substitution with 2SA1797T100Q. NPN types do not offer equivalent polarity or operating characteristics.

Q7: Does frequency transition (fT) impact substitution?
Transition frequency is provided for comparison and must meet or exceed the application's signal frequency requirements. Select substitutes matching or exceeding the 200MHz value if necessary for high-speed operations.

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