2SA1791JRL Equivalent & Substitute Parts

Part Overview

The 2SA1791JRL is a PNP bipolar junction transistor manufactured by Panasonic Electronic Components, rated for 50 V collector-emitter breakdown voltage and 50 mA maximum collector current. This device is packaged in the SC-89/SOT-490 surface mount form factor (SSMini3-F1) and is designed for general-purpose switching and amplification applications operating up to 250 MHz.

The 2SA1791JRL is classified as an obsolete product. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

2SA1791JRL

Panasonic Electronic ComponentsIn Stock: 8832SA1791JRL Datasheet

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2SAR523EBTL

Rohm SemiconductorIn Stock: 421722SAR523EBTL Datasheet

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DTA043TEBTL

Rohm SemiconductorIn Stock: 20112DTA043TEBTL Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SA1791JRL is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Transistor type must be PNP
• Voltage - Collector Emitter Breakdown rating must be equal to or greater than 50 V
• Current - Collector (Ic) maximum rating must be equal to or greater than 50 mA
• Power dissipation rating must be equal to or greater than 125 mW
• Frequency - Transition must support operation at 250 MHz or higher
• Operating temperature range must accommodate 125°C or higher

Mechanical Compatibility Criteria:

• Mounting type must be Surface Mount
• Package / Case must be SC-89 or SOT-490 compatible
• Moisture Sensitivity Level must be 1 (Unlimited) or equivalent

The substitute parts listed below meet or exceed all specified parameters, ensuring functional and physical compatibility with applications designed for the 2SA1791JRL.

Parameter Comparison

Engineering Selection Recommendations

2SAR523EBTL (Rohm Semiconductor): This substitute provides direct electrical compatibility with the 2SA1791JRL while offering enhanced performance specifications. The 2SAR523EBTL exceeds the original part in collector current capacity (100 mA versus 50 mA), power dissipation (150 mW versus 125 mW), and transition frequency (300 MHz versus 250 MHz). The device is classified as Active product status, ensuring long-term availability and supply chain continuity. RoHS3 compliance and REACH unaffected status support regulatory requirements for current manufacturing standards.

DTA043TEBTL (Rohm Semiconductor): This substitute is a pre-biased PNP transistor variant that meets the electrical specifications of the 2SA1791JRL. The integrated base resistor (4.7 kOhms) differentiates this device for applications requiring simplified biasing networks. The DTA043TEBTL maintains the 50 V voltage rating and 250 MHz transition frequency of the original part while providing 100 mA collector current capacity and 150 mW power dissipation. Active product status, RoHS3 compliance, and REACH unaffected status ensure regulatory alignment and supply availability. Selection of this variant is appropriate for designs where the pre-biased configuration reduces external component count.

Both substitute parts are manufactured by Rohm Semiconductor, an established supplier with consistent quality and availability. The choice between 2SAR523EBTL and DTA043TEBTL depends on circuit topology requirements: standard PNP operation versus pre-biased configuration.

Frequently Asked Questions (FAQ)

Q: Can the 2SAR523EBTL directly replace the 2SA1791JRL in existing designs?

A: Yes. The 2SAR523EBTL meets or exceeds all electrical parameters of the 2SA1791JRL, including voltage rating (50 V), collector current (100 mA versus 50 mA minimum), power dissipation (150 mW versus 125 mW minimum), and transition frequency (300 MHz versus 250 MHz minimum). Package compatibility is maintained in the SC-89/SOT-490 form factor. No circuit modifications are required for direct substitution.

Q: What is the difference between the 2SAR523EBTL and DTA043TEBTL?

A: The 2SAR523EBTL is a standard PNP transistor requiring external base biasing resistors. The DTA043TEBTL is a pre-biased PNP transistor with an integrated 4.7 kOhms base resistor. Both devices meet the voltage and current specifications of the 2SA1791JRL. Selection depends on circuit design: use 2SAR523EBTL for designs with existing bias networks, or DTA043TEBTL for simplified biasing requirements.

Q: Are the substitute parts available in the same package as the 2SA1791JRL?

A: Yes. Both 2SAR523EBTL and DTA043TEBTL are supplied in the SC-89/SOT-490 surface mount package, identical to the 2SA1791JRL. The supplier device packages are EMT3F (SOT-416FL), which is mechanically and electrically compatible with the original SSMini3-F1 package designation.

Q: What is the product status of the substitute parts?

A: Both 2SAR523EBTL and DTA043TEBTL are classified as Active products. This ensures ongoing manufacturing, consistent supply availability, and long-term support from Rohm Semiconductor, in contrast to the obsolete status of the 2SA1791JRL.

Q: Do the substitute parts meet current regulatory compliance standards?

A: Yes. Both 2SAR523EBTL and DTA043TEBTL are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and distribution.

Q: Can I use the DTA043TEBTL in applications originally designed for the 2SA1791JRL?

A: The DTA043TEBTL is suitable for applications where the pre-biased configuration is compatible with the circuit topology. The integrated 4.7 kOhms base resistor simplifies biasing but may require circuit evaluation to confirm compatibility with existing designs. The 2SAR523EBTL is recommended for direct replacement without circuit modification.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) PNP transistor type, (2) Collector-Emitter breakdown voltage equal to or greater than 50 V, (3) Maximum collector current equal to or greater than 50 mA, (4) Power dissipation equal to or greater than 125 mW, (5) Transition frequency equal to or greater than 250 MHz, and (6) Operating temperature range supporting 125°C or higher.