2SA1707S-AN Equivalent & Substitute Parts

Part Overview

The 2SA1707S-AN is a PNP bipolar junction transistor manufactured by onsemi, rated for 50V collector-emitter breakdown voltage and 3A maximum collector current. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The through-hole 3-NMP package configuration and electrical specifications define the substitution criteria for this device.

Substiute Parts

2SA1707S-AN
onsemiIn Stock: 7482SA1707S-AN Datasheet
2SA1707S-AN
Current Part
2SA2126-H
onsemiIn Stock: 9352SA2126-H Datasheet
2SA2126-H
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Power - Max 1 W
Frequency - Transition 150 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A

Substitute Part Grouping Explanation

Substitution of the 2SA1707S-AN is determined by electrical parameter compatibility within the PNP bipolar transistor category. The critical parameters establishing substitution eligibility are:

  • Transistor Type: PNP configuration required
  • Current Rating: Maximum collector current of 3A or greater
  • Voltage Rating: Collector-emitter breakdown voltage of 50V or greater
  • Power Dissipation: Maximum power rating of 1W or greater
  • Mounting Configuration: Through-hole package type
  • Operating Temperature: Maximum junction temperature of 150°C or greater

The 2SA2126-H meets all substitution criteria. Both devices share identical maximum collector current (3A) and collector-emitter breakdown voltage (50V) specifications. The 2SA2126-H provides enhanced performance characteristics including higher DC current gain (200 vs. 140), improved transition frequency (390MHz vs. 150MHz), and reduced saturation voltage (520mV vs. 700mV), while maintaining through-hole mounting compatibility and the same maximum operating temperature.

Parameter Comparison

Parameter 2SA1707S-AN 2SA2126-H Unit
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 3 3 A
Voltage - Collector Emitter Breakdown (Max) 50 50 V
Power - Max 1 0.8 W
Frequency - Transition 150 390 MHz
Operating Temperature (TJ) 150 150 °C
Mounting Type Through Hole Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V 200 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A 520mV @ 100mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO)
Product Status Obsolete Obsolete
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

The 2SA2126-H is a direct electrical substitute for the 2SA1707S-AN based on matching maximum ratings for collector current and collector-emitter breakdown voltage. Both devices are classified as obsolete and carry identical REACH and ECCN compliance status (REACH Unaffected, EAR99).

The 2SA2126-H demonstrates superior electrical performance with higher DC current gain and transition frequency, coupled with lower saturation voltage. These characteristics provide enhanced switching speed and reduced power dissipation in saturation conditions. The 2SA2126-H is RoHS3 compliant, whereas the 2SA1707S-AN compliance status is not specified in available documentation.

Package configuration differs between the devices: the 2SA1707S-AN uses SC-71 (3-NMP), while the 2SA2126-H uses TO-251-3 Short Leads (TP). Physical board layout and PCB footprint modifications are required for substitution. Both devices maintain through-hole mounting technology and identical maximum operating junction temperature (150°C).

Frequently Asked Questions (FAQ)

Q: Can the 2SA2126-H directly replace the 2SA1707S-AN without circuit modification?

A: Electrical substitution is valid based on matching maximum collector current (3A) and collector-emitter breakdown voltage (50V). However, package configuration differs (SC-71 vs. TO-251-3), requiring PCB footprint redesign. The 2SA2126-H exhibits superior performance characteristics (higher gain, lower saturation voltage, higher transition frequency) that are compatible with applications designed for the 2SA1707S-AN.

Q: What are the key electrical differences between these devices?

A: The 2SA2126-H provides DC current gain of 200 compared to 140 for the 2SA1707S-AN at identical test conditions (100mA, 2V). Saturation voltage is reduced from 700mV to 520mV. Transition frequency increases from 150MHz to 390MHz. Maximum power dissipation is 800mW versus 1W. These differences indicate improved switching performance and reduced power loss in the substitute device.

Q: Are there package compatibility considerations?

A: Yes. The 2SA1707S-AN uses a 3-NMP package (SC-71), while the 2SA2126-H uses a TP package (TO-251-3 Short Leads). These are physically distinct packages requiring different PCB footprints and board layout accommodations. Pin configuration and lead spacing differ between the two devices.

Q: What compliance certifications apply to each device?

A: Both devices are REACH Unaffected and classified under ECCN EAR99. The 2SA2126-H carries RoHS3 compliance certification. The 2SA1707S-AN RoHS compliance status is not documented in available specifications.

Q: Are both devices suitable for high-frequency applications?

A: The 2SA2126-H is better suited for high-frequency applications, with transition frequency of 390MHz compared to 150MHz for the 2SA1707S-AN. For applications operating below 150MHz, both devices are functionally equivalent. Applications requiring frequencies between 150MHz and 390MHz benefit from the 2SA2126-H's enhanced frequency response.

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