2SA1680,F(J Equivalent & Substitute Parts

Part Overview

The 2SA1680,F(J is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This through-hole component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 2 A and 900 mW power dissipation. The device is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating different packaging technologies.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	2	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Power - Max	900	mW
Frequency - Transition	100	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3 Long Body	—

Substitute Part Grouping Explanation

Substitution of the 2SA1680,F(J is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

Transistor type must be PNP
Collector current rating must equal or exceed 2 A
Collector-emitter breakdown voltage must equal or exceed 50 V
Maximum power dissipation must equal or exceed 900 mW
Operating temperature range must support 150°C junction temperature

Mechanical Compatibility Criteria:

Package type determines mounting compatibility (through-hole versus surface mount)
Pinout configuration must be compatible with existing circuit board layouts

The 2SA2060(TE12L,F) qualifies as a substitute based on matching PNP transistor type, 2 A collector current, 50 V breakdown voltage, and 150°C operating temperature. However, this substitute employs surface-mount packaging (PW-MINI) rather than through-hole technology, requiring circuit board redesign for implementation.

Parameter Comparison

Parameter	2SA1680,F(J	2SA2060(TE12L,F)	Unit
Transistor Type	PNP	PNP	—
Current - Collector (Ic) Max	2	2	A
Voltage - Collector Emitter Breakdown (Max)	50	50	V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 1A	200mV @ 33mA, 1A	V
Current - Collector Cutoff (Max)	1µA	100nA	—
DC Current Gain (hFE) Min	120 @ 100mA, 2V	200 @ 300mA, 2V	—
Power - Max	900	1000	mW
Operating Temperature (TJ)	150	150	°C
Mounting Type	Through Hole	Surface Mount	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

For Direct Through-Hole Replacement: No direct through-hole substitute is provided in the available data. The 2SA1680,F(J remains the only through-hole option for existing circuit board designs without modification.

For New Designs and Surface-Mount Applications: The 2SA2060(TE12L,F) is an active product suitable for new designs requiring PNP transistor functionality at 2 A and 50 V specifications. This component offers improved electrical characteristics including lower saturation voltage (200mV versus 500mV) and higher current gain (200 versus 120), along with increased power rating (1 W versus 900 mW). The surface-mount PW-MINI package enables higher-density circuit board layouts. The 2SA2060(TE12L,F) is RoHS3 compliant, supporting modern manufacturing and environmental standards.

Inventory and Availability: The 2SA1680,F(J maintains 824 pieces in stock as an obsolete component. The 2SA2060(TE12L,F) is actively manufactured with 3100 pieces available, ensuring long-term supply continuity for production requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SA2060(TE12L,F) directly replace the 2SA1680,F(J in existing circuit boards?

A: No. The 2SA2060(TE12L,F) uses surface-mount PW-MINI packaging, while the 2SA1680,F(J uses through-hole TO-92MOD packaging. Direct board-level substitution requires circuit board redesign and rework.

Q: What are the key electrical differences between these parts?

A: Both devices share identical PNP type, 2 A collector current, and 50 V breakdown voltage. The 2SA2060(TE12L,F) provides superior performance with lower saturation voltage (200mV versus 500mV), higher current gain (200 versus 120), and increased power dissipation (1 W versus 900 mW).

Q: Why is the 2SA1680,F(J classified as obsolete?

A: The 2SA1680,F(J is an older through-hole design. Toshiba has transitioned production to surface-mount alternatives like the 2SA2060(TE12L,F) to meet modern manufacturing requirements and higher integration density.

Q: Are there compliance differences between these parts?

A: The 2SA2060(TE12L,F) is RoHS3 compliant, meeting current environmental regulations. The 2SA1680,F(J predates these requirements. Both components carry EAR99 export classification.

Q: What packaging considerations apply to substitution?

A: The 2SA1680,F(J is supplied in tape and reel format as TO-92MOD through-hole components. The 2SA2060(TE12L,F) is supplied in tape and reel format as PW-MINI surface-mount components. Packaging format affects assembly processes, board layout, and component handling.

Q: Can the 2SA2060(TE12L,F) handle the same thermal conditions?

A: Yes. Both devices operate at maximum junction temperature of 150°C, supporting identical thermal operating ranges.

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