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2SA16740SA Equivalent & Substitute Parts
Part Overview
The 2SA16740SA is a PNP bipolar junction transistor manufactured by Panasonic Electronic Components, rated for 80V collector-emitter breakdown voltage and 1A maximum collector current. This component is designed for through-hole mounting in the MT-2-A1 package configuration and operates at a maximum junction temperature of 150°C with a power dissipation rating of 1W.
The 2SA16740SA is classified as an obsolete product. Obsolescence necessitates identification of functionally equivalent substitute components to maintain design continuity and ensure procurement availability for legacy system support, repairs, and production requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) Max | 1 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | V |
| Power - Max | 1 | W |
| Frequency - Transition | 120 | MHz |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | MT-2-A1 | — |
Substitute Part Grouping Explanation
Substitution of the 2SA16740SA is determined by electrical parameter compatibility within the following criteria:
Mandatory Matching Parameters:
- Transistor polarity: PNP configuration
- Collector current rating: 1A maximum
- Collector-emitter breakdown voltage: 80V maximum
- Through-hole mounting capability
- Operating temperature range: minimum 150°C junction temperature support
Acceptable Parameter Variations:
- Power dissipation rating may exceed 1W (higher ratings provide design margin)
- Transition frequency may differ from 120MHz (frequency requirements depend on application-specific switching speed)
- DC current gain (hFE) values may vary within acceptable operating ranges
- Saturation voltage characteristics may differ provided they remain within circuit tolerance
- Package form factor may differ if through-hole mounting is maintained
The BD180G from onsemi meets the mandatory electrical criteria for substitution while operating as an active product with current manufacturing support.
Parameter Comparison
| Parameter | 2SA16740SA (Panasonic) | BD180G (onsemi) | Unit |
|---|---|---|---|
| Transistor Type | PNP | PNP | — |
| Current - Collector (Ic) Max | 1 | 1 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | 80 | V |
| Power - Max | 1 | 30 | W |
| Frequency - Transition | 120 | 3 | MHz |
| Operating Temperature (TJ) | 150 | −65 to 150 | °C |
| Mounting Type | Through Hole | Through Hole | — |
| DC Current Gain (hFE) Min @ Ic, Vce | 170 @ 100mA, 2V | 40 @ 150mA, 2V | — |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA | 800mV @ 100mA, 1A | V |
| Current - Collector Cutoff (Max) | 100nA | 1mA | — |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
BD180G Substitution Suitability:
The BD180G is electrically qualified as a substitute for the 2SA16740SA based on matching collector current (1A), collector-emitter breakdown voltage (80V), and PNP polarity. The BD180G maintains through-hole mounting compatibility and supports the required 150°C maximum junction temperature.
Product Status Advantage:
The BD180G carries active product status with current manufacturing support from onsemi, eliminating obsolescence-related procurement constraints. This status ensures long-term availability and supply chain stability compared to the obsolete 2SA16740SA.
Compliance Considerations:
The BD180G is RoHS3 compliant and REACH unaffected, meeting modern regulatory requirements for electronic component procurement. Both components share identical ECCN classification (EAR99), maintaining export control consistency.
Performance Trade-offs:
The BD180G provides 30W power dissipation versus 1W for the 2SA16740SA, offering enhanced thermal capability for applications requiring higher power handling. The transition frequency of 3MHz in the BD180G is lower than the 120MHz specification of the 2SA16740SA; applications requiring high-frequency switching performance must evaluate this parameter against specific circuit requirements. The DC current gain (hFE) of the BD180G is lower (40 minimum) compared to the 2SA16740SA (170 minimum), which may affect base drive requirements in current-limited applications.
Package Consideration:
The BD180G uses TO-126 packaging versus the MT-2-A1 package of the 2SA16740SA. Both are through-hole configurations; physical board layout modifications may be required to accommodate the different package footprint.
Frequently Asked Questions (FAQ)
Q: Can the BD180G directly replace the 2SA16740SA without circuit modifications?
A: The BD180G meets the core electrical requirements (1A collector current, 80V breakdown voltage, PNP polarity, through-hole mounting). However, differences in DC current gain (hFE), saturation voltage, and transition frequency may require circuit evaluation. Base drive circuits and frequency-dependent applications must be assessed for compatibility with the BD180G characteristics.
Q: What is the significance of the lower transition frequency in the BD180G?
A: The BD180G operates at 3MHz transition frequency compared to 120MHz for the 2SA16740SA. This parameter defines the maximum useful switching frequency. Applications operating below 3MHz are unaffected. High-frequency switching applications must confirm that 3MHz meets the required performance envelope.
Q: How do the DC current gain differences affect circuit design?
A: The 2SA16740SA specifies 170 minimum hFE at 100mA, while the BD180G specifies 40 minimum at 150mA. Lower current gain requires higher base current to achieve the same collector current. Base resistor values and drive circuit design may require adjustment to maintain proper transistor saturation and switching performance.
Q: Are there package compatibility issues between MT-2-A1 and TO-126?
A: Both packages are through-hole configurations suitable for PCB mounting. The physical dimensions and pin spacing differ, requiring board layout modifications. Mechanical fit and thermal management characteristics may differ; verify mounting clearances and heat dissipation requirements for the specific application.
Q: What is the impact of higher saturation voltage in the BD180G?
A: The BD180G exhibits 800mV saturation voltage at 100mA/1A compared to 300mV for the 2SA16740SA. Higher saturation voltage increases power dissipation in saturated switching applications. Circuits sensitive to saturation voltage drop must evaluate the impact on overall system performance and thermal management.
Q: Why is the BD180G classified as active while the 2SA16740SA is obsolete?
A: The 2SA16740SA is no longer manufactured by Panasonic and is not available through standard distribution channels. The BD180G is currently manufactured by onsemi with ongoing production and supply chain support, ensuring long-term availability for new designs and legacy system support.
Q: Are there regulatory or compliance differences between these components?
A: The BD180G is RoHS3 compliant and REACH unaffected, meeting current environmental regulations. Both components share EAR99 export control classification. The BD180G's active status ensures compliance documentation and certifications remain current with regulatory requirements.
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