2SA1576A-R-TP Equivalent & Substitute Parts

Part Overview

The 2SA1576A-R-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 150 mA and 200 mW power dissipation. The device is classified as Active product status and is available in SOT-323 packaging.

Substitute parts are identified when equivalent electrical and mechanical parameters align with the main part specifications, enabling direct replacement in circuit designs while maintaining functional performance within specified operating ranges.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	150	mA
Power - Max	200	mW
Frequency - Transition	100	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	—
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA	—
Current - Collector Cutoff (Max)	100	nA
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	SC-70, SOT-323	—

Substitute Part Grouping Explanation

Substitution eligibility for the 2SA1576A-R-TP is determined by the following critical parameters:

Primary Matching Criteria:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 50 V minimum
Current - Collector (Ic) (Max): 150 mA minimum
Power - Max: 200 mW minimum
Mounting Type: Surface Mount
Package / Case: SC-70 or SOT-323

Secondary Compatibility Parameters:

DC Current Gain (hFE): Minimum 120 @ specified conditions
Vce Saturation: Maximum 500 mV @ specified bias conditions
Current - Collector Cutoff (Max): 100 nA maximum
Operating Temperature: Minimum -55°C to maximum 150°C

Substitute parts are grouped based on full alignment with primary criteria. Deviations in secondary parameters are noted where they occur, indicating potential application-specific limitations.

Parameter Comparison

Parameter	2SA1576A-R-TP	2SA1576AT106Q	2SA1586-GR,LF	BC857AW-7-F
Manufacturer	Micro Commercial Co	Rohm Semiconductor	Toshiba Semiconductor and Storage	Diodes Incorporated
Transistor Type	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	45 V
Current - Collector (Ic) (Max)	150 mA	150 mA	150 mA	100 mA
Power - Max	200 mW	200 mW	100 mW	200 mW
Frequency - Transition	100 MHz	140 MHz	80 MHz	200 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	120 @ 1mA, 6V	200 @ 2mA, 6V	125 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA	500mV @ 5mA, 50mA	300mV @ 10mA, 100mA	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	100 nA	100 nA	100 nA	15 nA
Operating Temperature Range	-55 to 150°C	Up to 150°C	Up to 125°C	-65 to 150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323
Product Status	Active	Not For New Designs	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

2SA1576AT106Q (Rohm Semiconductor)

This part matches all primary electrical parameters with the 2SA1576A-R-TP. Transition frequency is elevated at 140 MHz compared to 100 MHz. Product status is classified as Not For New Designs, indicating this part is suitable for replacement applications only and not recommended for new circuit development.

2SA1586-GR,LF (Toshiba Semiconductor and Storage)

This part maintains PNP configuration, 50 V breakdown voltage, and 150 mA collector current. Power dissipation is reduced to 100 mW, and transition frequency is 80 MHz. Operating temperature maximum is 125°C, which is lower than the main part specification of 150°C. Product status is Active. This part is suitable for applications where power dissipation and frequency requirements are within the specified limits.

BC857AW-7-F (Diodes Incorporated)

This part operates at 45 V collector-emitter breakdown voltage and 100 mA maximum collector current, both lower than the main part. Power dissipation is 200 mW. Transition frequency is 200 MHz. Product status is Active and RoHS3 compliant. This part is suitable for applications with reduced voltage and current requirements.

Frequently Asked Questions (FAQ)

Q: Can 2SA1576AT106Q be used as a direct replacement for 2SA1576A-R-TP?

A: Electrical parameters are equivalent. However, 2SA1576AT106Q is classified as Not For New Designs. Use this part only for replacement in existing designs where the original part is no longer available.

Q: What are the limitations of 2SA1586-GR,LF compared to 2SA1576A-R-TP?

A: Maximum power dissipation is 100 mW versus 200 mW, transition frequency is 80 MHz versus 100 MHz, and maximum operating temperature is 125°C versus 150°C. Applications requiring higher power dissipation, frequency response, or elevated temperature operation require the main part or alternative substitutes.

Q: Is BC857AW-7-F suitable for all applications using 2SA1576A-R-TP?

A: No. BC857AW-7-F has reduced maximum collector current (100 mA versus 150 mA) and lower collector-emitter breakdown voltage (45 V versus 50 V). Use this part only in applications where these reduced ratings are acceptable.

Q: Are all substitute parts available in SOT-323 packaging?

A: All listed substitute parts are available in SC-70 or SOT-323 packaging, compatible with the main part's surface mount footprint requirements.

Q: What is the significance of Product Status classifications?

A: Active status indicates the part is in current production and recommended for new designs. Not For New Designs status indicates the part is available for replacement purposes only and should not be selected for new circuit development.

Q: Do all substitute parts meet RoHS3 compliance?

A: 2SA1576AT106Q, 2SA1586-GR,LF, and BC857AW-7-F are all ROHS3 compliant. Compliance status for the main part 2SA1576A-R-TP is not specified in the provided data.

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