Equivalent & Substitute Parts for 2SA1576ART1

Part Overview

The 2SA1576ART1 is a PNP bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 100 mA maximum collector current in a surface mount SC-70 (SOT-323) package. This component is classified as obsolete, which necessitates identification of functionally equivalent alternatives for ongoing design support and production requirements. The part delivers 200 mW maximum power dissipation and operates at junction temperatures up to 150°C.

Substiute Parts

2SA1576ART1
onsemiIn Stock: 11392SA1576ART1 Datasheet
2SA1576ART1
Current Part
2SA1576AT106R
Rohm SemiconductorIn Stock: 4172152SA1576AT106R Datasheet
2SA1576AT106R
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BC857BW-G
Comchip TechnologyIn Stock: 943BC857BW-G Datasheet
BC857BW-G
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BC857CW-G
Comchip TechnologyIn Stock: 1214BC857CW-G Datasheet
BC857CW-G
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BC860BWH6327XTSA1
Infineon TechnologiesIn Stock: 711BC860BWH6327XTSA1 Datasheet
BC860BWH6327XTSA1
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 100 mA
Power - Max 200 mW
Vce Saturation (Max) 500 mV @ 10mA, 100mA
DC Current Gain (hFE) (Min) 180 @ 2mA, 6V
Current - Collector Cutoff (Max) 100 nA
Operating Temperature (Max) 150 °C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SA1576ART1 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor polarity must remain PNP
  • Collector-emitter breakdown voltage must equal or exceed 50 V
  • Maximum collector current must equal or exceed 100 mA
  • Maximum power dissipation must equal or exceed 200 mW
  • Package type must be SC-70 or SOT-323 (surface mount)
  • Moisture sensitivity level must be 1 (Unlimited)

Secondary Compatibility Factors:

  • Vce saturation characteristics
  • DC current gain (hFE) minimum specifications
  • Collector cutoff current (ICBO)
  • Operating temperature range

Parts meeting all primary criteria are classified as direct substitutes. Parts exceeding one or more electrical parameters while maintaining package compatibility are classified as functional equivalents with enhanced performance capability.

Parameter Comparison

Parameter 2SA1576ART1 (onsemi) 2SA1576AT106R (Rohm) BC857BW-G (Comchip) BC857CW-G (Comchip) BC860BWH6327XTSA1 (Infineon)
Transistor Type PNP PNP PNP PNP PNP
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 45 V 45 V 45 V
Current - Collector (Ic) (Max) 100 mA 150 mA 100 mA 100 mA 100 mA
Power - Max 200 mW 200 mW 150 mW 150 mW 250 mW
Vce Saturation (Max) 500 mV @ 10mA, 100mA 500 mV @ 5mA, 50mA 650 mV @ 5mA, 100mA 650 mV @ 5mA, 100mA 650 mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) 180 @ 2mA, 6V 180 @ 1mA, 6V 220 @ 2.2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V
Current - Collector Cutoff (Max) 100 nA 100 nA 15 nA 15 nA 15 nA
Frequency - Transition 140 MHz 100 MHz 100 MHz 250 MHz
Operating Temperature (Max) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Not For New Designs Active Active Last Time Buy

Engineering Selection Recommendations

2SA1576AT106R (Rohm Semiconductor)

This part maintains electrical parity with the 2SA1576ART1 across all primary substitution criteria: 50 V breakdown voltage, 150 mA collector current capability (exceeding the 100 mA requirement), and 200 mW power rating. The part is packaged in SC-70/SOT-323 format with MSL 1 rating. The product status is "Not For New Designs," indicating limited long-term availability. RoHS3 compliance provides environmental regulatory advantage over the non-compliant 2SA1576ART1. This part is suitable for direct replacement in existing production where voltage and current margins are not constrained.

BC857BW-G (Comchip Technology)

This part operates at 45 V collector-emitter breakdown voltage, which is 5 V below the 2SA1576ART1 specification. It maintains 100 mA maximum collector current and SC-70/SOT-323 packaging. Power dissipation is rated at 150 mW, which is 50 mW below the original part. The product status is Active, ensuring ongoing availability and supply chain stability. RoHS3 compliance is provided. This part is suitable for applications where the 50 V breakdown voltage is not a critical design margin.

BC857CW-G (Comchip Technology)

This part shares identical electrical specifications with BC857BW-G: 45 V breakdown voltage, 100 mA collector current, 150 mW power dissipation, and SC-70/SOT-323 packaging. The DC current gain (hFE) is specified at 420 @ 2mA, 5V, which exceeds the 2SA1576ART1 minimum of 180 @ 2mA, 6V. Product status is Active with RoHS3 compliance. This part is suitable for applications where the 45 V breakdown voltage is acceptable and higher current gain is beneficial.

BC860BWH6327XTSA1 (Infineon Technologies)

This part operates at 45 V collector-emitter breakdown voltage with 100 mA maximum collector current and SC-70/SOT-323 packaging. Power dissipation is rated at 250 mW, exceeding the 200 mW requirement. Transition frequency is specified at 250 MHz, providing enhanced high-frequency performance. Product status is Last Time Buy, indicating limited future availability. RoHS3 compliance is provided. This part is suitable for applications requiring higher power dissipation capability and frequency response, provided the 45 V breakdown voltage is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1576ART1 be replaced with a part rated at 45 V breakdown voltage?

A: Substitution with 45 V rated parts (BC857BW-G, BC857CW-G, BC860BWH6327XTSA1) is permissible only if the circuit design does not require the full 50 V margin. The 5 V reduction in breakdown voltage must be evaluated against the maximum collector-emitter voltage stress in the application. If the application operates at or near 50 V, these parts are not suitable substitutes.

Q: What is the significance of the "Not For New Designs" status on the 2SA1576AT106R?

A: This status indicates that Rohm Semiconductor has discontinued active development and marketing of this part. While the part remains available in current inventory, future availability cannot be guaranteed. For new product designs, parts with Active status (BC857BW-G, BC857CW-G) are preferred to ensure long-term supply chain continuity.

Q: Are all substitute parts available in the same package format?

A: Yes. All substitute parts listed are packaged in SC-70 or SOT-323 format, which are mechanically and electrically compatible with the 2SA1576ART1. No PCB layout modifications are required for package substitution.

Q: What is the impact of the 150 mW power rating on BC857BW-G and BC857CW-G compared to the 200 mW 2SA1576ART1?

A: The 50 mW reduction in maximum power dissipation must be considered in thermal design. If the application dissipates power approaching or exceeding 150 mW, these parts may require enhanced thermal management or circuit redesign to maintain safe operating conditions. The 2SA1576AT106R and BC860BWH6327XTSA1 provide higher power ratings (200 mW and 250 mW respectively) and are preferred for power-constrained applications.

Q: Does RoHS compliance affect electrical performance?

A: RoHS compliance relates to material composition and environmental regulatory adherence, not electrical performance. All RoHS3 compliant substitute parts maintain equivalent electrical characteristics to the non-compliant 2SA1576ART1. RoHS compliance is advantageous for applications subject to environmental regulations or customer requirements.

Q: What is the difference between BC857BW-G and BC857CW-G?

A: Both parts share identical electrical specifications except for DC current gain (hFE). BC857BW-G specifies 220 @ 2.2mA, 5V, while BC857CW-G specifies 420 @ 2mA, 5V. The higher current gain of BC857CW-G may provide improved circuit performance in applications sensitive to transistor gain variation, but both parts are functionally equivalent for most applications.

Q: Can the BC860BWH6327XTSA1 be used in high-frequency applications?

A: Yes. The BC860BWH6327XTSA1 is specified with a transition frequency of 250 MHz, compared to 100 MHz for BC857BW-G and BC857CW-G. This enhanced frequency response makes it suitable for applications requiring higher switching speeds or RF performance. However, the 45 V breakdown voltage limitation must still be observed.

Q: Is the 2SA1576AT106R a direct replacement for the 2SA1576ART1?

A: The 2SA1576AT106R is a functional equivalent with enhanced current capability (150 mA vs. 100 mA) and maintains the 50 V breakdown voltage specification. It is suitable for direct replacement in existing designs. However, the "Not For New Designs" status should be considered for long-term supply planning.

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