2SA1552T-TL-H Equivalent & Substitute Parts Reference

Part Overview

The 2SA1552T-TL-H is a PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a maximum collector-emitter voltage of 160 V, a maximum collector current of 1.5 A, and is rated for up to 1 W power dissipation, all in a surface-mount TO-252-3 package. The product is marked as obsolete, which makes sourcing challenging for ongoing or future designs. It is therefore essential to identify qualified substitute models that meet the core electrical and mechanical specifications required for direct replacement.

Substiute Parts

2SA1552T-TL-H
onsemiIn Stock: 14882SA1552T-TL-H Datasheet
2SA1552T-TL-H
Current Part
2SB1275TLP
Rohm SemiconductorIn Stock: 105782SB1275TLP Datasheet
2SB1275TLP
Similar

Key Parameters

Parameter 2SA1552T-TL-H
Transistor Type PNP
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 5V
Power - Max 1 W
Frequency - Transition 120MHz
Operating Temperature 150°C (TJ)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package TP-FA
RoHS Status ROHS3 Compliant
MSL 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitution is conducted strictly according to parameters essential for replacement in the Transistors, Bipolar (BJT) product category. These include transistor type (PNP), maximum collector-emitter voltage (160 V), maximum collector current (1.5 A), cutoff current, package compatibility, mounting type, and compliance information (RoHS, REACH, MSL). Other electrical characteristics such as Vce(sat), DC current gain (hFE), frequency transition, power rating, and thermal ratings are matched as provided.

Parameter Comparison

Parameter 2SA1552T-TL-H
(onsemi)
2SB1275TLP
(Rohm Semiconductor)
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 2V @ 100mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 5V 82 @ 100mA, 5V
Power - Max 1 W 10 W
Frequency - Transition 120MHz 50MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package TP-FA CPT3
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Selection should consider the product status, as the 2SA1552T-TL-H is obsolete while the 2SB1275TLP is not for new designs. Both parts are ROHS3 compliant, have the same MSL (1, Unlimited), and are REACH unaffected. Package and mounting style are consistent for direct replacement.

Frequently Asked Questions (FAQ)

Q1: What key parameters must match for BJT transistor substitution?
A1: Transistor type, maximum collector-emitter voltage, maximum collector current, package/case, mounting type, and electrical characteristics such as cutoff current, DC current gain, and compliance status.

Q2: Is the TO-252-3, DPAK (2 Leads + Tab), SC-63 package pin-compatible?
A2: Both the 2SA1552T-TL-H and its substitute 2SB1275TLP use the TO-252-3, DPAK (2 Leads + Tab), SC-63 package class, supporting package-level compatibility.

Q3: How does certification impact substitute part selection?
A3: Both transistors are ROHS3 compliant, maintain the same MSL rating, and are REACH unaffected, meeting environmental and manufacturing safety requirements.

Q4: What should be considered regarding product status?
A4: The main part, 2SA1552T-TL-H, is obsolete. The substitute, 2SB1275TLP, is not for new designs. Both statuses must be considered for new product introduction and lifetime support.

Q5: Are there significant performance differences?
A5: Differences exist in DC current gain, power rating, transition frequency, and saturation voltage according to the provided data. Selection must stay within allowed specification ranges for the application.

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