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2SA1552T-TL-H Equivalent & Substitute Parts Reference
Part Overview
The 2SA1552T-TL-H is a PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a maximum collector-emitter voltage of 160 V, a maximum collector current of 1.5 A, and is rated for up to 1 W power dissipation, all in a surface-mount TO-252-3 package. The product is marked as obsolete, which makes sourcing challenging for ongoing or future designs. It is therefore essential to identify qualified substitute models that meet the core electrical and mechanical specifications required for direct replacement.
Substiute Parts
Key Parameters
| Parameter | 2SA1552T-TL-H |
|---|---|
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 5V |
| Power - Max | 1 W |
| Frequency - Transition | 120MHz |
| Operating Temperature | 150°C (TJ) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TP-FA |
| RoHS Status | ROHS3 Compliant |
| MSL | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
Substitute Part Grouping Explanation
Substitution is conducted strictly according to parameters essential for replacement in the Transistors, Bipolar (BJT) product category. These include transistor type (PNP), maximum collector-emitter voltage (160 V), maximum collector current (1.5 A), cutoff current, package compatibility, mounting type, and compliance information (RoHS, REACH, MSL). Other electrical characteristics such as Vce(sat), DC current gain (hFE), frequency transition, power rating, and thermal ratings are matched as provided.
Parameter Comparison
| Parameter | 2SA1552T-TL-H (onsemi) |
2SB1275TLP (Rohm Semiconductor) |
|---|---|---|
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 1.5 A | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 5V | 82 @ 100mA, 5V |
| Power - Max | 1 W | 10 W |
| Frequency - Transition | 120MHz | 50MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TP-FA | CPT3 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
Selection should consider the product status, as the 2SA1552T-TL-H is obsolete while the 2SB1275TLP is not for new designs. Both parts are ROHS3 compliant, have the same MSL (1, Unlimited), and are REACH unaffected. Package and mounting style are consistent for direct replacement.
Frequently Asked Questions (FAQ)
Q1: What key parameters must match for BJT transistor substitution?
A1: Transistor type, maximum collector-emitter voltage, maximum collector current, package/case, mounting type, and electrical characteristics such as cutoff current, DC current gain, and compliance status.
Q2: Is the TO-252-3, DPAK (2 Leads + Tab), SC-63 package pin-compatible?
A2: Both the 2SA1552T-TL-H and its substitute 2SB1275TLP use the TO-252-3, DPAK (2 Leads + Tab), SC-63 package class, supporting package-level compatibility.
Q3: How does certification impact substitute part selection?
A3: Both transistors are ROHS3 compliant, maintain the same MSL rating, and are REACH unaffected, meeting environmental and manufacturing safety requirements.
Q4: What should be considered regarding product status?
A4: The main part, 2SA1552T-TL-H, is obsolete. The substitute, 2SB1275TLP, is not for new designs. Both statuses must be considered for new product introduction and lifetime support.
Q5: Are there significant performance differences?
A5: Differences exist in DC current gain, power rating, transition frequency, and saturation voltage according to the provided data. Selection must stay within allowed specification ranges for the application.
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