2SA1464-P-AP Equivalent & Substitute Parts

Part Overview

The 2SA1464-P-AP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-23 package. This component operates at a maximum collector current of 500 mA with a 40 V collector-emitter breakdown voltage and 200 mW power dissipation capability. The device is classified as obsolete, necessitating identification of equivalent substitute parts for ongoing design requirements and production continuity.

Substiute Parts

2SA1464-P-AP
Micro Commercial CoIn Stock: 10062SA1464-P-AP Datasheet
2SA1464-P-AP
Current Part
2SA1036KT146Q
Rohm SemiconductorIn Stock: 603312SA1036KT146Q Datasheet
2SA1036KT146Q
Similar
BC807-16LT1G
onsemiIn Stock: 146964BC807-16LT1G Datasheet
BC807-16LT1G
Similar

Key Parameters

Parameter Value
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Power - Max 200 mW
Frequency - Transition 400 MHz
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Operating Temperature (Max) 150°C (TJ)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 2SA1464-P-AP are selected based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP configuration
  • Current Rating: 500 mA collector current maximum
  • Package Type: Surface mount SOT-23 / TO-236-3 compatible
  • Mounting: Surface mount technology
  • Temperature Rating: 150°C maximum junction temperature
  • Compliance: ROHS3 compliant

Secondary Compatibility Parameters:

  • Collector-Emitter Breakdown Voltage: Equal to or greater than 40 V
  • Power Dissipation: Equal to or greater than 200 mW
  • Transition Frequency: Electrical performance consideration

The substitute parts identified meet the core electrical specifications and physical packaging requirements necessary for direct replacement in applications designed for the 2SA1464-P-AP.

Parameter Comparison

Parameter 2SA1464-P-AP 2SA1036KT146Q BC807-16LT1G
Manufacturer Micro Commercial Co Rohm Semiconductor onsemi
Product Status Obsolete Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 32 V 45 V
Power - Max 200 mW 200 mW 300 mW
Frequency - Transition 400 MHz 200 MHz 100 MHz
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount Surface Mount Surface Mount
Operating Temperature (Max) 150°C (TJ) 150°C (TJ) 150°C (TJ)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

2SA1036KT146Q (Rohm Semiconductor)

This substitute is an active product with full ROHS3 compliance and REACH unaffected status. The 2SA1036KT146Q maintains the 500 mA collector current and 200 mW power rating. The collector-emitter breakdown voltage is rated at 32 V, which is lower than the original 40 V specification. This part is suitable for applications where the circuit voltage does not exceed 32 V. The transition frequency of 200 MHz is lower than the original 400 MHz specification.

BC807-16LT1G (onsemi)

This substitute is an active product with full ROHS3 compliance and REACH unaffected status. The BC807-16LT1G maintains the 500 mA collector current and exceeds the power rating at 300 mW. The collector-emitter breakdown voltage is rated at 45 V, which exceeds the original 40 V specification, providing additional voltage margin. The transition frequency of 100 MHz is lower than the original 400 MHz specification. This part offers the broadest voltage compatibility and enhanced power handling capability.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1036KT146Q be used as a direct replacement for the 2SA1464-P-AP?

A: The 2SA1036KT146Q is electrically compatible for applications operating at voltages up to 32 V. The collector current (500 mA) and power dissipation (200 mW) ratings are identical. However, the lower collector-emitter breakdown voltage (32 V versus 40 V) and reduced transition frequency (200 MHz versus 400 MHz) must be evaluated against circuit requirements.

Q: What is the primary difference between the BC807-16LT1G and the 2SA1036KT146Q?

A: The BC807-16LT1G provides a higher collector-emitter breakdown voltage (45 V) and greater power dissipation capability (300 mW) compared to the 2SA1036KT146Q (32 V, 200 mW). Both maintain the 500 mA collector current rating. The BC807-16LT1G is suitable for higher voltage applications.

Q: Are all substitute parts available in the same package?

A: All substitute parts are available in the TO-236-3 / SC-59 / SOT-23-3 surface mount package, which is physically and mechanically compatible with the original 2SA1464-P-AP.

Q: What compliance certifications apply to the substitute parts?

A: Both substitute parts are ROHS3 compliant with MSL rating of 1 (Unlimited). The BC807-16LT1G and 2SA1036KT146Q both carry REACH unaffected status.

Q: Which substitute part should be selected for maximum voltage headroom?

A: The BC807-16LT1G provides the highest collector-emitter breakdown voltage at 45 V, exceeding the original 40 V specification by 5 V.

Q: Are there frequency limitations when using substitute parts?

A: The original 2SA1464-P-AP operates at 400 MHz transition frequency. Both substitute parts have lower transition frequencies (2SA1036KT146Q at 200 MHz, BC807-16LT1G at 100 MHz). Applications requiring high-frequency switching performance must evaluate whether the reduced transition frequency is acceptable for the intended circuit function.

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