2SA1386 Equivalent & Substitute Parts Reference

Part Overview

2SA1386 is a PNP bipolar transistor in the category of Transistors, Bipolar (BJT), manufactured by Sanken Electric USA Inc. It offers a collector-emitter breakdown voltage of 160 V, collector current of 15 A, and is housed in a TO-3P package. The product is currently active and ROHS3 compliant. Identifying alternative models is necessary for ensuring supply chain continuity, inventory management, and design flexibility when the main part experiences allocation or sourcing constraints.

Substiute Parts

2SA1386
Sanken Electric USA Inc.In Stock: 24732SA1386 Datasheet
2SA1386
Current Part
2SA1386A
Sanken Electric USA Inc.In Stock: 26182SA1386A Datasheet
2SA1386A
Direct

Key Parameters

Manufacturer Part Number Transistor Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Operating Temperature Mounting Type Package / Case RoHS Status Moisture Sensitivity Level (MSL)
2SA1386 PNP 160 V 15 A 2V @ 500mA, 5A 100µA (ICBO) 50 @ 5A, 4V 130 W 40MHz 150°C (TJ) Through Hole TO-3P-3, SC-65-3 ROHS3 Compliant 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts are grouped strictly based on identical or better electrical and mechanical parameters. Key substitution criteria include: transistor type, maximum collector-emitter breakdown voltage, maximum collector current, Vce saturation, collector cutoff current, DC current gain, maximum power dissipation, transition frequency, operating temperature, mounting type, package/case, RoHS compliance, and moisture sensitivity level.

Parameter Comparison

Manufacturer Part Number Transistor Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Operating Temperature Mounting Type Package / Case RoHS Status Moisture Sensitivity Level (MSL)
2SA1386 PNP 160 V 15 A 2V @ 500mA, 5A 100µA (ICBO) 50 @ 5A, 4V 130 W 40MHz 150°C (TJ) Through Hole TO-3P-3, SC-65-3 ROHS3 Compliant 1 (Unlimited)
2SA1386A PNP 180 V 15 A 2V @ 500mA, 5A 100µA (ICBO) 50 @ 5A, 4V 130 W 40MHz 150°C (TJ) Through Hole TO-3P-3, SC-65-3 ROHS3 Compliant 1 (Unlimited)

Engineering Selection Recommendations

All listed parts are currently in active production status and are ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). Both the original and substitute parts are supplied in through-hole TO-3P-3, SC-65-3 packages, with matching environmental compliance and package characteristics.

Frequently Asked Questions (FAQ)

Q1: What are the strict criteria for substituting 2SA1386 in an assembly?
A1: Substitute transistors must match on transistor type, collector-emitter breakdown voltage, collector current rating, DC current gain, power dissipation, package/case, mounting type, operating temperature, RoHS compliance, and moisture sensitivity level.

Q2: Is 2SA1386A a form, fit, and function equivalent for 2SA1386?
A2: 2SA1386A matches 2SA1386 on all key electrical and mechanical parameters, including package type and ratings, with a higher collector-emitter breakdown voltage.

Q3: Are there any differences in compliance or reliability between 2SA1386 and 2SA1386A?
A3: Both parts are ROHS3 compliant and rated at Moisture Sensitivity Level 1 (Unlimited).

Q4: Are package and footprint identical between the original and substitute part?
A4: Both 2SA1386 and 2SA1386A use the TO-3P-3, SC-65-3 package, ensuring consistent footprint and mounting compatibility.

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