2SA1381DSTU Equivalent & Substitute Parts

Part Overview

The 2SA1381DSTU is a PNP bipolar junction transistor manufactured by onsemi, rated for 300 V collector-emitter breakdown voltage and 100 mA maximum collector current. This device is packaged in a TO-126-3 through-hole configuration and is rated for 7 W maximum power dissipation. The 2SA1381DSTU is classified as an obsolete product. Identification of equivalent and substitute parts is necessary due to the obsolete status and potential supply constraints. Substitute parts must maintain compatibility with the original electrical specifications and mechanical form factor to ensure direct replacement capability in existing circuit designs.

Substiute Parts

2SA1381DSTU

onsemiIn Stock: 9712SA1381DSTU Datasheet

Current PartRFQ

MJE350G

onsemiIn Stock: 20158MJE350G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SA1381DSTU is determined by the following critical parameters: transistor type (PNP), collector-emitter breakdown voltage (300 V), package form factor (TO-126-3 through-hole), and mounting compatibility. The substitute part MJE350G shares the same PNP transistor type, identical 300 V breakdown voltage rating, and compatible TO-126 package configuration. The MJE350G exceeds the original specifications in maximum collector current (500 mA versus 100 mA) and maximum power dissipation (20 W versus 7 W), making it suitable for applications requiring the original electrical characteristics while providing enhanced current and power handling capability. The MJE350G is classified as an active product with current manufacturing status and full RoHS3 compliance, addressing supply availability concerns associated with the obsolete 2SA1381DSTU.

Parameter Comparison

Engineering Selection Recommendations

The MJE350G is the qualified substitute for the 2SA1381DSTU based on the following engineering criteria:

Electrical Compatibility: Both devices are PNP transistors with identical 300 V collector-emitter breakdown voltage ratings. The MJE350G maximum collector current rating of 500 mA exceeds the 2SA1381DSTU specification of 100 mA, ensuring full compatibility for applications operating within the original 100 mA design envelope. The MJE350G maximum power dissipation of 20 W exceeds the 2SA1381DSTU rating of 7 W.

Package Compatibility: Both devices utilize TO-126 through-hole packaging, enabling direct mechanical substitution in existing printed circuit board layouts without modification to component footprints or mounting hardware.

Product Status and Compliance: The MJE350G is classified as an active product with current manufacturing availability, addressing supply chain constraints associated with the obsolete 2SA1381DSTU. The MJE350G carries RoHS3 compliance certification, meeting current environmental and regulatory requirements. Both devices maintain REACH Unaffected status and EAR99 export classification.

Temperature Operating Range: The MJE350G operating temperature range of -65°C to 150°C encompasses the 2SA1381DSTU range of -55°C to 150°C, providing equivalent or superior thermal performance across all specified operating conditions.

Frequently Asked Questions (FAQ)

Q: Can the MJE350G be used as a direct replacement for the 2SA1381DSTU in all applications?

A: The MJE350G is electrically and mechanically compatible with the 2SA1381DSTU for applications operating within the original design specifications. Both devices share identical PNP transistor type, 300 V breakdown voltage rating, and TO-126 through-hole package configuration. The MJE350G exceeds the original specifications in maximum collector current and power dissipation, making it suitable for direct substitution in existing circuit designs.

Q: What are the key differences between the 2SA1381DSTU and MJE350G?

A: The primary differences are: (1) Product Status—the 2SA1381DSTU is obsolete while the MJE350G is active; (2) Maximum Collector Current—100 mA for the 2SA1381DSTU versus 500 mA for the MJE350G; (3) Maximum Power Dissipation—7 W for the 2SA1381DSTU versus 20 W for the MJE350G; (4) DC Current Gain—60 (minimum) at 10 mA, 10 V for the 2SA1381DSTU versus 30 (minimum) at 50 mA, 10 V for the MJE350G; (5) Compliance—the MJE350G carries RoHS3 certification while the 2SA1381DSTU does not.

Q: Are there any circuit design considerations when substituting the MJE350G for the 2SA1381DSTU?

A: Circuit designs operating within the original 2SA1381DSTU specifications require no modification for MJE350G substitution. The higher current and power ratings of the MJE350G do not introduce incompatibility with existing bias networks, load resistances, or signal coupling configurations. Thermal management considerations remain equivalent or improved due to the MJE350G's higher power dissipation capability.

Q: What is the package compatibility between the 2SA1381DSTU and MJE350G?

A: Both devices utilize TO-126 through-hole packaging. The 2SA1381DSTU is specified as TO-225AA or TO-126-3, while the MJE350G is specified as TO-225AA or TO-126. These package designations are mechanically compatible, enabling direct substitution without printed circuit board layout modifications or component footprint changes.

Q: Why is the MJE350G recommended over the 2SA1381DSTU?

A: The MJE350G is recommended due to active product status with current manufacturing availability, addressing supply constraints associated with the obsolete 2SA1381DSTU. The MJE350G carries RoHS3 compliance certification, meeting current environmental regulations. Electrical and mechanical compatibility is maintained across all specified operating parameters.