2SA1298-Y-TP Equivalent & Substitute Parts

Part Overview

The 2SA1298-Y-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This surface mount device operates at a maximum collector current of 800 mA with a collector-emitter breakdown voltage of 30 V and a maximum power dissipation of 200 mW. The device is housed in a SOT-23 package and features a transition frequency of 250 MHz, making it suitable for interface and signal processing applications. The part maintains Active product status with 924 units currently in stock. Equivalent and substitute parts are identified to support design flexibility, supply chain continuity, and application-specific performance requirements.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	800	mA
Voltage - Collector Emitter Breakdown (Max)	30	V
Vce Saturation (Max) @ Ib, Ic	400 mV @ 20 mA, 500 mA	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100 mA, 1 V	—
Power - Max	200	mW
Frequency - Transition	250	MHz
Operating Temperature	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—

Substitute Part Grouping Explanation

Substitution of the 2SA1298-Y-TP is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor Type: PNP configuration required
Current - Collector (Ic) (Max): Substitute must support minimum 800 mA
Voltage - Collector Emitter Breakdown (Max): Substitute must support minimum 30 V
Power - Max: Substitute must support minimum 200 mW
Frequency - Transition: Substitute must support minimum 250 MHz for high-frequency applications, or lower frequencies for standard switching applications
DC Current Gain (hFE): Substitute must meet or exceed minimum gain specifications at rated conditions

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount required
Package / Case: TO-236-3, SC-59, or SOT-23-3 package equivalents

Compliance Criteria:

Product Status: Active parts only
REACH Status: REACH Unaffected or compliant

The identified substitute parts meet these criteria with electrical parameters that equal or exceed the 2SA1298-Y-TP specifications, ensuring functional interchangeability within the defined operating envelope.

Parameter Comparison

Parameter	2SA1298-Y-TP	2SB1197KT146Q	2SB1197KT146R	MMBT4403LT1G
Manufacturer	Micro Commercial Co	Rohm Semiconductor	Rohm Semiconductor	onsemi
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	800 mA	800 mA	800 mA	600 mA
Voltage - Collector Emitter Breakdown (Max)	30 V	32 V	32 V	40 V
Vce Saturation (Max) @ Ib, Ic	400 mV @ 20 mA, 500 mA	500 mV @ 50 mA, 500 mA	500 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA
Current - Collector Cutoff (Max)	100 nA	500 nA	500 nA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100 mA, 1 V	120 @ 100 mA, 3 V	180 @ 100 mA, 3 V	100 @ 150 mA, 2 V
Power - Max	200 mW	200 mW	200 mW	300 mW
Frequency - Transition	250 MHz	200 MHz	200 MHz	200 MHz
Operating Temperature	-55 to 150 °C	150 °C	150 °C	-55 to 150 °C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Product Status	Active	Active	Active	Active
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

2SB1197KT146Q and 2SB1197KT146R (Rohm Semiconductor)

Both 2SB1197 variants are direct electrical equivalents to the 2SA1298-Y-TP with identical maximum collector current (800 mA) and power dissipation (200 mW). The 2SB1197 series provides higher breakdown voltage (32 V versus 30 V), supporting applications with elevated voltage margins. Both parts maintain Active product status and REACH Unaffected compliance. The 2SB1197KT146R variant offers higher DC current gain (180 @ 100 mA, 3 V) compared to the 2SB1197KT146Q (120 @ 100 mA, 3 V), providing design flexibility for gain-dependent circuits. Inventory availability is substantial for both variants (79,802 and 102,400 units respectively). The transition frequency of 200 MHz is lower than the 2SA1298-Y-TP (250 MHz), making these parts suitable for standard switching applications operating below 200 MHz.

MMBT4403LT1G (onsemi)

The MMBT4403LT1G is a functional substitute with higher voltage rating (40 V) and power dissipation (300 mW) compared to the 2SA1298-Y-TP. The maximum collector current is 600 mA, which is lower than the 2SA1298-Y-TP (800 mA), restricting use to applications requiring currents not exceeding 600 mA. The MMBT4403LT1G maintains Active product status, ROHS3 compliance, and full operating temperature range (-55 to 150 °C). Transition frequency is 200 MHz. This part is suitable for applications where higher voltage headroom and power dissipation are beneficial, provided collector current requirements do not exceed 600 mA. Inventory availability is high (824,300 units).

Frequently Asked Questions (FAQ)

Q: Can the 2SB1197KT146Q or 2SB1197KT146R be used as direct replacements for the 2SA1298-Y-TP?

A: Yes. Both 2SB1197 variants are electrically compatible with the 2SA1298-Y-TP for applications operating at collector currents up to 800 mA and voltages up to 30 V. The higher breakdown voltage (32 V) of the 2SB1197 series provides additional voltage margin. The lower transition frequency (200 MHz versus 250 MHz) is suitable for standard switching applications. Identical SOT-23 packaging ensures mechanical compatibility.

Q: What are the limitations of using the MMBT4403LT1G as a substitute?

A: The MMBT4403LT1G has a maximum collector current of 600 mA, which is 200 mA lower than the 2SA1298-Y-TP. Applications requiring collector currents between 600 mA and 800 mA cannot use this part. The transition frequency is 200 MHz, suitable for standard switching but not for applications requiring the 250 MHz capability of the 2SA1298-Y-TP. The higher Vce saturation voltage (750 mV @ 50 mA, 500 mA) may affect switching speed in saturation-mode circuits.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts (2SB1197KT146Q, 2SB1197KT146R, and MMBT4403LT1G) are available in TO-236-3, SC-59, or SOT-23-3 packages, which are mechanically equivalent to the 2SA1298-Y-TP. Pin configuration and footprint compatibility are maintained across all listed substitutes.

Q: What is the difference between 2SB1197KT146Q and 2SB1197KT146R?

A: Both parts are electrically identical except for DC current gain specifications. The 2SB1197KT146R has a minimum DC current gain of 180 @ 100 mA, 3 V, while the 2SB1197KT146Q has a minimum of 120 @ 100 mA, 3 V. The 2SB1197KT146R is suitable for applications requiring higher current gain. Packaging differs: 2SB1197KT146Q is supplied in Cut Tape (CT) & Digi-Reel, while 2SB1197KT146R is supplied in Tape & Reel (TR).

Q: Do all substitute parts meet the same compliance standards as the 2SA1298-Y-TP?

A: All substitute parts maintain REACH Unaffected status and Active product status. The 2SB1197 variants and MMBT4403LT1G are ROHS3 compliant. All parts carry EAR99 ECCN classification. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for the 2SB1197 and MMBT4403LT1G variants, indicating no moisture sensitivity restrictions.

Q: Which substitute part should be selected for high-frequency applications?

A: The 2SA1298-Y-TP itself is the optimal choice for applications requiring 250 MHz transition frequency. If substitution is necessary, applications operating at frequencies below 200 MHz can use the 2SB1197KT146Q, 2SB1197KT146R, or MMBT4403LT1G. For applications requiring transition frequencies above 200 MHz, the 2SA1298-Y-TP should be retained.

Q: Can the MMBT4403LT1G be used in high-current applications?

A: No. The MMBT4403LT1G is limited to a maximum collector current of 600 mA. Applications requiring 800 mA operation must use the 2SA1298-Y-TP, 2SB1197KT146Q, or 2SB1197KT146R. The MMBT4403LT1G is suitable only for applications with collector current requirements not exceeding 600 mA.

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