2SA1213-O-AP Equivalent & Substitute Parts

Part Overview

The 2SA1213-O-AP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, rated for 50V collector-emitter breakdown voltage and 2A maximum collector current. This component is classified as obsolete, necessitating identification of active equivalent parts for ongoing production and maintenance applications. The device is packaged in SOT-89 surface mount configuration with 500mW power dissipation capability and operates at frequencies up to 120MHz.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Maximum Collector Current (Ic)	2	A
Collector-Emitter Breakdown Voltage (Max)	50	V
Maximum Power Dissipation	500	mW
Transition Frequency	120	MHz
Mounting Type	Surface Mount	—
Package Type	SOT-89 / TO-243AA	—
RoHS Compliance	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2SA1213-O-AP is determined by electrical and mechanical parameter equivalence across the following criteria:

Electrical Parameters (Required Match):

Transistor polarity: PNP
Maximum collector current: 2A
Collector-emitter breakdown voltage: 50V
Package mechanical compatibility: TO-243AA / SOT-89 footprint
Surface mount configuration

Compliance Parameters:

RoHS3 compliance status
Moisture sensitivity level: 1 (Unlimited)

The substitute parts 2DA1213Y-13, 2SB1123T-TD-E, and 2SB1123S-TD-E satisfy these core electrical and mechanical requirements. All substitute parts maintain the same collector current rating, breakdown voltage, and surface mount package footprint as the original 2SA1213-O-AP.

Parameter Comparison

Parameter	2SA1213-O-AP (Main)	2DA1213Y-13	2SB1123T-TD-E	2SB1123S-TD-E
Manufacturer	Micro Commercial Co	Diodes Incorporated	onsemi	onsemi
Product Status	Obsolete	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP
Ic (Max)	2 A	2 A	2 A	2 A
Vce Breakdown (Max)	50 V	50 V	50 V	50 V
Vce Saturation (Max)	500mV @ 50mA, 1A	500mV @ 50mA, 1A	700mV @ 50mA, 1A	700mV @ 50mA, 1A
Power Dissipation (Max)	500 mW	1 W	500 mW	500 mW
Transition Frequency	120 MHz	160 MHz	150 MHz	150 MHz
DC Current Gain (hFE Min)	70 @ 500mA, 2V	120 @ 500mA, 2V	200 @ 100mA, 2V	100 @ 100mA, 2V
Operating Temperature (Max)	150°C	150°C	150°C	150°C
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	SOT-89	SOT-89-3	PCP	PCP
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

2DA1213Y-13 (Diodes Incorporated): This substitute offers enhanced performance characteristics with 1W maximum power dissipation (versus 500mW) and 160MHz transition frequency. The part is in active production status with substantial inventory availability (150,400 units). It maintains electrical equivalence across all critical parameters and is ROHS3 compliant. The higher power rating provides additional thermal margin in applications approaching the original device's power limits.

2SB1123T-TD-E (onsemi): This active substitute maintains the original 500mW power rating and 150MHz transition frequency. It is supplied in Cut Tape and Digi-Reel packaging with 25,400 units in stock. The device exhibits higher DC current gain (200 @ 100mA, 2V) compared to the original specification. ROHS3 compliance and REACH unaffected status are confirmed.

2SB1123S-TD-E (onsemi): This active substitute is functionally equivalent to 2SB1123T-TD-E with identical electrical specifications but supplied in Tape & Reel packaging. Inventory availability is 13,200 units. DC current gain is specified at 100 @ 100mA, 2V. ROHS3 compliance and REACH unaffected status are confirmed.

All three substitute parts are active products with confirmed availability, eliminating obsolescence risk associated with the original 2SA1213-O-AP.

Frequently Asked Questions (FAQ)

Q: Can the 2DA1213Y-13 be used as a direct replacement for the 2SA1213-O-AP?

A: Yes. The 2DA1213Y-13 maintains electrical equivalence across all critical parameters: 2A collector current, 50V breakdown voltage, PNP polarity, and TO-243AA package footprint. The enhanced power rating (1W versus 500mW) and higher transition frequency (160MHz versus 120MHz) are compatible with applications designed for the original part.

Q: What is the difference between the two onsemi substitutes (2SB1123T-TD-E and 2SB1123S-TD-E)?

A: Both onsemi parts are electrically identical with 2A collector current, 50V breakdown voltage, and 150MHz transition frequency. The primary difference is packaging format: 2SB1123T-TD-E is supplied in Cut Tape and Digi-Reel, while 2SB1123S-TD-E is supplied in Tape & Reel. Selection depends on assembly line requirements and tape format compatibility.

Q: Are there package footprint differences between substitutes?

A: All substitute parts use the TO-243AA mechanical package, which is footprint-compatible with the original 2SA1213-O-AP. Supplier device packages differ (SOT-89-3 for Diodes, PCP for onsemi), but these designations refer to the same physical footprint and pin configuration.

Q: Do all substitutes meet RoHS compliance requirements?

A: Yes. All three substitute parts are ROHS3 compliant. The 2DA1213Y-13 and both onsemi parts carry confirmed REACH unaffected status where applicable.

Q: Which substitute offers the best thermal performance?

A: The 2DA1213Y-13 provides the highest power dissipation rating at 1W, compared to 500mW for the original part and the onsemi substitutes. This provides additional thermal margin in power-limited applications.

Q: Are there differences in DC current gain between substitutes?

A: Yes. The 2SB1123T-TD-E specifies 200 @ 100mA, 2V, while 2SB1123S-TD-E specifies 100 @ 100mA, 2V. The original 2SA1213-O-AP specifies 70 @ 500mA, 2V. These variations reflect different measurement conditions and do not affect functional substitution for standard switching applications.

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