2SA1179N6-CPA-TB-E Equivalent & Substitute Parts

Part Overview

The 2SA1179N6-CPA-TB-E is a PNP bipolar junction transistor manufactured by onsemi, designed for small-signal switching and amplification applications. This component operates at a maximum collector voltage of 50 V with a collector current rating of 150 mA and a maximum power dissipation of 200 mW. The device features a transition frequency of 180 MHz and is housed in a TO-236-3 (SOT-23-3) surface mount package.

The 2SA1179N6-CPA-TB-E is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor topology.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Ic) Maximum	150	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Power Dissipation (Max)	200	mW
Transition Frequency	180	MHz
DC Current Gain (hFE) Min @ Ic, Vce	200 @ 1mA, 6V	—
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA	—
Operating Temperature (Max)	150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the 2SA1179N6-CPA-TB-E is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Parameters:

Transistor type must be PNP
Collector-emitter breakdown voltage must be greater than or equal to 50 V
Collector current rating must be greater than or equal to 150 mA
Power dissipation must be greater than or equal to 200 mW
Package must be TO-236-3 (SOT-23-3) surface mount
Operating temperature maximum must be greater than or equal to 150°C

Secondary Compatibility Factors:

Transition frequency should support the intended application frequency range
DC current gain (hFE) characteristics should align with circuit biasing requirements
Vce saturation characteristics should be compatible with switching performance

Substitute parts are grouped into two categories based on their electrical characteristics relative to the main part:

Category A - Direct Electrical Equivalents: Parts meeting or exceeding all primary parameters with minimal deviation in secondary characteristics. These include 2PB709BRL,215, 2PB709BSL,215, 2PB710ARL,215, 2PB710ARL,235, and 2PB710ASL,215.

Category B - Functional Equivalents: Parts meeting primary parameters with acceptable deviations in secondary characteristics. These include MMBT3906LT1G, 2SA1162-GR,LF, and 2SA812-M7-TP.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Power mW	fT MHz	hFE Min	Vce Sat mV	Tj Max °C	Package	Status
2SA1179N6-CPA-TB-E	onsemi	150	50	200	180	200	500	150	TO-236-3	Obsolete
MMBT3906LT1G	onsemi	200	40	300	250	100	400	150	TO-236-3	Active
2PB709BRL,215	NXP Semiconductors	200	50	250	200	210	250	150	TO-236-3	Active
2PB709BSL,215	NXP Semiconductors	200	50	250	200	210	250	150	TO-236-3	Active
2PB710ARL,215	Nexperia USA Inc.	500	50	250	120	120	600	150	TO-236-3	Active
2PB710ARL,235	Nexperia USA Inc.	500	50	250	120	120	600	150	TO-236-3	Active
2PB710ASL,215	Nexperia USA Inc.	500	50	250	140	170	600	150	TO-236-3	Active
2PB710ASL,235	Nexperia USA Inc.	500	50	250	140	170	600	150	TO-236-3	Active
2SA1162-GR,LF	Toshiba Semiconductor and Storage	150	50	150	80	200	300	125	TO-236-3	Active
2SA812-M7-TP	Micro Commercial Co	100	50	200	180	90	300	150	TO-236-3	Active

Engineering Selection Recommendations

Recommended Primary Substitutes:

The 2PB709BRL,215 and 2PB709BSL,215 are the preferred substitutes for the 2SA1179N6-CPA-TB-E. Both parts are manufactured by NXP Semiconductors and are classified as active products. These devices meet or exceed all primary electrical parameters: 200 mA collector current, 50 V breakdown voltage, 250 mW power dissipation, and 150°C maximum operating temperature. The 2PB709 series provides improved Vce saturation characteristics (250 mV versus 500 mV) and higher transition frequency (200 MHz), resulting in enhanced switching performance. Both variants are qualified to AEC-Q101 automotive standards and carry ROHS3 compliance.

Secondary Substitutes:

The 2PB710ARL,215, 2PB710ARL,235, 2PB710ASL,215, and 2PB710ASL,235 are suitable for applications requiring higher collector current capability (500 mA). These Nexperia parts maintain the 50 V breakdown voltage and 150°C operating temperature. The 2PB710ASL variants offer improved transition frequency (140 MHz) and higher DC current gain (170) compared to the 2PB710ARL variants (120 MHz, hFE 120). All 2PB710 variants are AEC-Q101 qualified and ROHS3 compliant.

Alternative Substitutes:

The MMBT3906LT1G (onsemi) is an active product suitable for applications where the 40 V breakdown voltage is acceptable. This device provides higher collector current (200 mA) and power dissipation (300 mW) with superior transition frequency (250 MHz). The 2SA1162-GR,LF (Toshiba) matches the 150 mA collector current and 50 V breakdown voltage but operates at a maximum temperature of 125°C and provides lower transition frequency (80 MHz). The 2SA812-M7-TP (Micro Commercial Co) matches the 200 mW power dissipation and 180 MHz transition frequency but is limited to 100 mA collector current.

Frequently Asked Questions (FAQ)

Q: Can the MMBT3906LT1G replace the 2SA1179N6-CPA-TB-E in all applications?

A: The MMBT3906LT1G is suitable for applications where the 40 V collector-emitter breakdown voltage is acceptable. The main part is rated for 50 V. If the circuit operates at voltages approaching or exceeding 40 V, the MMBT3906LT1G is not appropriate. The MMBT3906LT1G provides higher current capability (200 mA) and faster switching (250 MHz), making it suitable for higher-speed applications within the 40 V constraint.

Q: What is the difference between 2PB710ARL and 2PB710ASL variants?

A: Both variants are manufactured by Nexperia and share identical electrical specifications except for transition frequency and DC current gain. The 2PB710ARL operates at 120 MHz with hFE minimum of 120, while the 2PB710ASL operates at 140 MHz with hFE minimum of 170. The selection between these variants depends on the required switching speed and biasing characteristics of the application circuit.

Q: Are the 2PB709 and 2PB710 series interchangeable?

A: The 2PB709 and 2PB710 series are not directly interchangeable. The 2PB709 is rated for 200 mA maximum collector current, while the 2PB710 is rated for 500 mA. The 2PB710 exhibits higher Vce saturation (600 mV versus 250 mV) and lower transition frequency (120–140 MHz versus 200 MHz). Use the 2PB710 series only when higher current capability is required.

Q: Why is the 2SA1162-GR,LF listed as a substitute if it has a lower maximum operating temperature?

A: The 2SA1162-GR,LF is listed as a functional equivalent based on matching collector current (150 mA) and breakdown voltage (50 V). However, the maximum operating temperature is 125°C compared to 150°C for the main part. This substitute is appropriate only for applications where the junction temperature remains below 125°C. The transition frequency is also lower (80 MHz), limiting its use to lower-speed applications.

Q: What packaging considerations apply to these substitutes?

A: All listed substitutes use the TO-236-3 (SOT-23-3) surface mount package, which is mechanically and electrically compatible with the 2SA1179N6-CPA-TB-E. Pin configuration and footprint are identical across all parts. No PCB layout modifications are required for substitution.

Q: Are all substitute parts RoHS compliant?

A: The 2PB709BRL,215, 2PB709BSL,215, 2PB710ARL,215, 2PB710ARL,235, 2PB710ASL,215, 2PB710ASL,235, 2SA1162-GR,LF, and 2SA812-M7-TP are ROHS3 compliant. The MMBT3906LT1G does not specify RoHS status in the provided data. Verify RoHS compliance requirements with your procurement specifications.

Q: Which substitute offers the best overall performance match to the 2SA1179N6-CPA-TB-E?

A: The 2PB709BRL,215 and 2PB709BSL,215 provide the closest electrical match. Both maintain the 50 V breakdown voltage and 150°C operating temperature while improving upon the main part in transition frequency (200 MHz versus 180 MHz) and Vce saturation (250 mV versus 500 mV). Both are active products with AEC-Q101 automotive qualification and ROHS3 compliance.

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