Equivalent & Substitute Parts for 2SA1162S-Y, LF(D

Part Overview

The 2SA1162S-Y, LF(D is a Bipolar (BJT) Transistor PNP manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 150 mA and transition frequency of 80 MHz. The part is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating available packaging and product status constraints.

Substiute Parts

2SA1162S-Y, LF(D
Toshiba Semiconductor and StorageIn Stock: 10542SA1162S-Y, LF(D Datasheet
2SA1162S-Y, LF(D
Current Part
2SA1162-Y,LF
Toshiba Semiconductor and StorageIn Stock: 42282SA1162-Y,LF Datasheet
2SA1162-Y,LF
Direct
RN1402,LF
Toshiba Semiconductor and StorageIn Stock: 647RN1402,LF Datasheet
RN1402,LF
Direct
2SA1037AKT146Q
Rohm SemiconductorIn Stock: 1815002SA1037AKT146Q Datasheet
2SA1037AKT146Q
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2SA1037AKT146R
Rohm SemiconductorIn Stock: 7023032SA1037AKT146R Datasheet
2SA1037AKT146R
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2SA812-M6-TP
Micro Commercial CoIn Stock: 7772SA812-M6-TP Datasheet
2SA812-M6-TP
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2SA812-M7-TP
Micro Commercial CoIn Stock: 10322SA812-M7-TP Datasheet
2SA812-M7-TP
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BC857A RFG
Taiwan Semiconductor CorporationIn Stock: 10037BC857A RFG Datasheet
BC857A RFG
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BC857B RFG
Taiwan Semiconductor CorporationIn Stock: 10037BC857B RFG Datasheet
BC857B RFG
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BC857C RFG
Taiwan Semiconductor CorporationIn Stock: 9958BC857C RFG Datasheet
BC857C RFG
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MMBT3906 RFG
Taiwan Semiconductor CorporationIn Stock: 106496MMBT3906 RFG Datasheet
MMBT3906 RFG
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MMBT3906L RFG
Taiwan Semiconductor CorporationIn Stock: 71231MMBT3906L RFG Datasheet
MMBT3906L RFG
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 150 mA
Vce Saturation (Max) @ Ib, Ic 300 mV @ 10 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2 mA, 6 V
Power - Max 150 mW
Frequency - Transition 80 MHz
Operating Temperature (TJ) 125 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SA1162S-Y, LF(D is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP (mandatory match)
  • Voltage - Collector Emitter Breakdown (Max): 50 V or greater
  • Current - Collector (Ic) (Max): 150 mA or greater
  • Package / Case: TO-236-3, SC-59, SOT-23-3 (surface mount compatibility)
  • Mounting Type: Surface Mount

Secondary Compatibility Parameters:

  • Vce Saturation (Max) @ Ib, Ic: 300 mV or lower at specified bias conditions
  • DC Current Gain (hFE) (Min): 120 or greater at specified conditions
  • Power - Max: 150 mW or greater
  • Frequency - Transition: 80 MHz or greater
  • Operating Temperature: 125°C or greater

Substitute parts are classified into two categories:

Direct Substitutes: Parts with identical base product number (2SA1162) but different packaging or product status. These maintain full electrical equivalence with the main part.

Similar Substitutes: Parts from alternative manufacturers (Rohm Semiconductor, Micro Commercial Co, Taiwan Semiconductor Corporation) that meet or exceed all critical electrical parameters and share the same surface mount package footprint. These parts satisfy functional requirements while offering active product status and improved availability.

Parameter Comparison

Part Number Manufacturer Product Status Ic (Max) mA Vce (Max) V hFE (Min) Power (Max) mW Frequency (Max) MHz Package Inventory
2SA1162S-Y, LF(D Toshiba Obsolete 150 50 120 150 80 SOT-23-3 1011
2SA1162-Y,LF Toshiba Active 150 50 120 150 80 SOT-23-3 4134
2SA1037AKT146Q Rohm Active 150 50 120 200 140 SOT-23-3 181400
2SA1037AKT146R Rohm Active 150 50 180 200 140 SOT-23-3 702200
2SA812-M6-TP Micro Commercial Co Active 100 50 90 200 180 SOT-23-3 701
2SA812-M7-TP Micro Commercial Co Active 100 50 90 200 180 SOT-23-3 963
BC857A RFG Taiwan Semiconductor Active 100 45 125 200 100 SOT-23-3 9973
BC857B RFG Taiwan Semiconductor Active 100 45 220 200 100 SOT-23-3 9982
BC857C RFG Taiwan Semiconductor Active 100 45 420 200 100 SOT-23-3 9886
MMBT3906 RFG Taiwan Semiconductor Active 200 40 100 350 250 SOT-23-3 106418

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Choice):

The 2SA1162-Y,LF from Toshiba Semiconductor and Storage is the direct equivalent to the obsolete 2SA1162S-Y, LF(D. This part maintains identical electrical specifications across all critical parameters: 150 mA maximum collector current, 50 V collector-emitter breakdown voltage, 120 minimum DC current gain, and 80 MHz transition frequency. The part is classified as Active product status with ROHS3 compliance and REACH Unaffected designation. Inventory availability is 4134 units. This substitution requires no circuit redesign and provides full functional compatibility.

Alternative Substitutes (When Direct Equivalent Unavailable):

The 2SA1037AKT146R from Rohm Semiconductor meets all critical electrical requirements with enhanced specifications: 150 mA collector current, 50 V breakdown voltage, 180 minimum DC current gain, and 140 MHz transition frequency. This part offers superior performance margin with 200 mW power rating and Active product status. Inventory availability is 702200 units. ROHS3 compliance and REACH Unaffected status are confirmed.

The 2SA1037AKT146Q from Rohm Semiconductor provides equivalent functionality with 150 mA collector current, 50 V breakdown voltage, 120 minimum DC current gain, and 140 MHz transition frequency. This variant offers 200 mW power rating with Active product status and extensive inventory (181400 units). ROHS3 compliance and REACH Unaffected status apply.

Reduced Current Applications:

The 2SA812-M7-TP and 2SA812-M6-TP from Micro Commercial Co are suitable for applications where maximum collector current requirement is 100 mA or less. Both parts maintain 50 V breakdown voltage, 200 mW power rating, and 180 MHz transition frequency. Active product status with REACH Unaffected designation is confirmed. These parts are appropriate for lower-current circuit implementations.

Lower Voltage Applications:

The BC857A RFG, BC857B RFG, and BC857C RFG from Taiwan Semiconductor Corporation are suitable for applications where maximum collector-emitter voltage requirement is 45 V or less. These parts provide 100 mA collector current, 200 mW power rating, and 100 MHz transition frequency. All variants are Active with ROHS3 compliance and REACH Unaffected status. Selection among variants (A, B, C) depends on required DC current gain: BC857A (125 minimum), BC857B (220 minimum), or BC857C (420 minimum).

Higher Performance Applications:

The MMBT3906 RFG from Taiwan Semiconductor Corporation offers enhanced specifications: 200 mA collector current, 250 MHz transition frequency, and 350 mW power rating. This part is suitable for applications requiring higher current capacity and faster switching performance. Collector-emitter breakdown voltage is 40 V, limiting use to lower-voltage circuits. Active product status with ROHS3 compliance and REACH Unaffected designation is confirmed.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1162-Y,LF directly replace the 2SA1162S-Y, LF(D without circuit modification?

A: Yes. The 2SA1162-Y,LF is the direct equivalent with identical electrical specifications. The primary difference is product status (Active versus Obsolete) and packaging format (Tape & Reel versus individual packaging). No circuit redesign is required.

Q: What is the key difference between the Rohm 2SA1037AKT146R and 2SA1037AKT146Q?

A: Both parts meet the electrical requirements of the 2SA1162S-Y, LF(D. The primary difference is DC current gain: the 2SA1037AKT146R specifies 180 minimum hFE at 1 mA and 6 V, while the 2SA1037AKT146Q specifies 120 minimum hFE at the same conditions. Selection depends on circuit bias requirements and gain tolerance specifications.

Q: Are the BC857 variants (A, B, C) interchangeable with the 2SA1162S-Y, LF(D?

A: The BC857 variants are functionally compatible for applications where maximum collector-emitter voltage is 45 V or less and maximum collector current is 100 mA or less. The primary limitation is reduced voltage rating (45 V versus 50 V) and reduced current capacity (100 mA versus 150 mA). These parts are suitable for lower-power circuit implementations. The variants differ in DC current gain specification.

Q: Can the MMBT3906 RFG be used as a substitute in all applications?

A: The MMBT3906 RFG is suitable for applications where the collector-emitter voltage requirement is 40 V or less. The 40 V breakdown voltage is lower than the 2SA1162S-Y, LF(D specification of 50 V. This part is appropriate for lower-voltage circuits but not for applications requiring the full 50 V rating. Higher current capacity (200 mA) and faster switching (250 MHz) make this part suitable for enhanced-performance implementations within voltage constraints.

Q: What packaging considerations apply to these substitute parts?

A: All listed substitute parts use surface mount SOT-23-3 package (TO-236-3, SC-59 designations). Physical footprint compatibility is maintained across all substitutes. Tape & Reel packaging is available for high-volume production requirements. Bulk packaging is available for selected parts. Moisture Sensitivity Level (MSL) 1 (Unlimited) applies to all parts, indicating no special moisture handling requirements.

Q: Are all substitute parts RoHS3 compliant?

A: The 2SA1162-Y,LF, 2SA1037AKT146Q, 2SA1037AKT146R, BC857A RFG, BC857B RFG, BC857C RFG, and MMBT3906 RFG are confirmed ROHS3 compliant. The 2SA812-M6-TP and 2SA812-M7-TP do not specify RoHS status in the provided data. All parts listed are REACH Unaffected or REACH compliant.

Q: What is the difference between the 2SA812-M6-TP and 2SA812-M7-TP?

A: Both parts are electrically identical with 100 mA maximum collector current, 50 V breakdown voltage, 90 minimum DC current gain, and 180 MHz transition frequency. The designation difference (M6 versus M7) reflects manufacturing or packaging variants. Both are Active product status with equivalent availability and specifications.

Q: Can I use a substitute part with lower maximum collector current in my application?

A: Substitution with lower maximum collector current is permissible only if the actual circuit operating current is less than the substitute part's rating. For example, if the circuit operates at 80 mA maximum, the 2SA812-M7-TP (100 mA rating) is suitable. However, if the circuit requires 150 mA operation, only substitutes with 150 mA or greater rating (2SA1162-Y,LF, 2SA1037AKT146Q, 2SA1037AKT146R, or MMBT3906 RFG) are appropriate.

Q: What is the significance of the DC current gain (hFE) variation among substitutes?

A: DC current gain variation affects circuit biasing and switching characteristics. The 2SA1162S-Y, LF(D specifies 120 minimum hFE. Substitutes with higher hFE (such as BC857C RFG at 420 minimum) require lower base current for equivalent collector current. Substitutes with lower hFE (such as 2SA812-M7-TP at 90 minimum) require higher base current. Circuit bias resistor values may require adjustment to maintain proper operating point with substitutes having significantly different hFE specifications.

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