Equivalent & Substitute Parts for 2SA1162S-Y,LF

Part Overview

The 2SA1162S-Y,LF is an active PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 150 mA and 150 mW power dissipation. The transistor is packaged in TO-236-3 (SC-59, SOT-23-3) surface mount configuration with S-Mini supplier packaging.

Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility permits selection from qualified alternatives that meet the same electrical and mechanical specifications.

Substiute Parts

2SA1162S-Y,LF

Toshiba Semiconductor and StorageIn Stock: 9892SA1162S-Y,LF Datasheet

Current PartRFQ

2SA1162-Y,LF

Toshiba Semiconductor and StorageIn Stock: 42282SA1162-Y,LF Datasheet

DirectRFQ

2SA1037AKT146Q

Rohm SemiconductorIn Stock: 1815002SA1037AKT146Q Datasheet

SimilarRFQ

2SA1037AKT146R

Rohm SemiconductorIn Stock: 7023032SA1037AKT146R Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SA1162S-Y,LF is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Transistor type must be PNP
• Collector-emitter breakdown voltage must be 50 V or greater
• Maximum collector current must be 150 mA or greater
• Maximum power dissipation must be 150 mW or greater
• Transition frequency must support the intended application bandwidth

Mechanical Compatibility Requirements:

• Package type must be TO-236-3, SC-59, or SOT-23-3 (three-terminal surface mount)
• Mounting type must be surface mount
• Pin configuration must be compatible with existing PCB layouts

Compliance Requirements:

• RoHS compliance status must be active (RoHS Compliant or ROHS3 Compliant)
• Product status must be Active

Substitute parts are grouped into two categories: direct equivalents (identical base part number with different packaging) and similar alternatives (different manufacturer with equivalent or superior electrical ratings).

Parameter Comparison

Engineering Selection Recommendations

Direct Equivalent (Toshiba 2SA1162-Y,LF): The 2SA1162-Y,LF is the direct equivalent of the 2SA1162S-Y,LF, differing only in packaging format (Tape & Reel versus standard packaging). Both parts share identical electrical specifications and are manufactured by Toshiba. The 2SA1162-Y,LF carries ROHS3 Compliant status and REACH Unaffected designation, providing enhanced compliance documentation. This part is suitable for direct substitution when packaging format permits.

Alternative Substitutes (Rohm 2SA1037AKT146Q and 2SA1037AKT146R): The Rohm 2SA1037AKT146Q and 2SA1037AKT146R transistors meet or exceed all critical electrical parameters of the 2SA1162S-Y,LF. Both devices provide superior power dissipation (200 mW versus 150 mW) and higher transition frequency (140 MHz versus 80 MHz). Operating temperature rating is elevated to 150 °C. Both parts are ROHS3 Compliant and REACH Unaffected. The 2SA1037AKT146R variant offers higher DC current gain (180 @ 1mA, 6V) compared to the 2SA1037AKT146Q (120 @ 1mA, 6V). Both alternatives are suitable for applications where the original part is unavailable, provided circuit design accommodates the enhanced electrical characteristics.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1162-Y,LF be used as a direct replacement for the 2SA1162S-Y,LF?

A: Yes. Both parts are manufactured by Toshiba with identical electrical specifications. The difference is packaging format: 2SA1162-Y,LF is supplied in Tape & Reel format while 2SA1162S-Y,LF uses standard packaging. Both are surface mount TO-236-3 (SOT-23-3) devices with compatible pin configurations.

Q: Are the Rohm 2SA1037AKT146Q and 2SA1037AKT146R suitable substitutes?

A: Yes, both Rohm parts meet the minimum electrical requirements. They provide equal or superior performance: 50 V breakdown voltage, 150 mA collector current, and enhanced power dissipation (200 mW). Transition frequency is higher (140 MHz versus 80 MHz) and operating temperature range extends to 150 °C. Package type is identical (TO-236-3, SOT-23-3). Substitution is valid when circuit design accommodates these enhanced specifications.

Q: What is the difference between 2SA1037AKT146Q and 2SA1037AKT146R?

A: Both parts are identical except for DC current gain specification. The 2SA1037AKT146R specifies minimum hFE of 180 @ 1mA, 6V, while the 2SA1037AKT146Q specifies 120 @ 1mA, 6V. Selection depends on circuit bias requirements. The higher gain variant (2SA1037AKT146R) is suitable for applications requiring lower base drive current.

Q: Are all substitute parts RoHS compliant?

A: Yes. The 2SA1162-Y,LF is ROHS3 Compliant. Both Rohm alternatives (2SA1037AKT146Q and 2SA1037AKT146R) are ROHS3 Compliant. All parts meet current RoHS requirements.

Q: Can these transistors be used interchangeably on the same PCB?

A: Yes. All listed parts use identical TO-236-3 (SC-59, SOT-23-3) surface mount packages with three-terminal configurations. Pin assignments are compatible, permitting direct PCB substitution without layout modification.

Q: What are the key electrical differences between the main part and Rohm alternatives?

A: The Rohm 2SA1037AKT146 series provides higher power dissipation (200 mW versus 150 mW), higher transition frequency (140 MHz versus 80 MHz), and higher operating temperature (150 °C versus 125 °C). Collector-emitter breakdown voltage and maximum collector current remain equal at 50 V and 150 mA respectively.