2SA1162-GR,LF Equivalent & Substitute Parts

Part Overview

The 2SA1162-GR,LF is a surface mount PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 150 mA and is packaged in the S-Mini (SOT-23-3) form factor. The device is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design flexibility demands components from different manufacturers that meet equivalent electrical specifications.

Substiute Parts

2SA1162-GR,LF
Toshiba Semiconductor and StorageIn Stock: 122952SA1162-GR,LF Datasheet
2SA1162-GR,LF
Current Part
2SA1162-O,LF
Toshiba Semiconductor and StorageIn Stock: 62402SA1162-O,LF Datasheet
2SA1162-O,LF
Parametric Equivalent
2SA1037AKT146Q
Rohm SemiconductorIn Stock: 1815002SA1037AKT146Q Datasheet
2SA1037AKT146Q
Similar
2SA1037AKT146R
Rohm SemiconductorIn Stock: 7023032SA1037AKT146R Datasheet
2SA1037AKT146R
Similar
BC857A RFG
Taiwan Semiconductor CorporationIn Stock: 10037BC857A RFG Datasheet
BC857A RFG
Similar
BC857B RFG
Taiwan Semiconductor CorporationIn Stock: 10037BC857B RFG Datasheet
BC857B RFG
Similar
BC857C RFG
Taiwan Semiconductor CorporationIn Stock: 9958BC857C RFG Datasheet
BC857C RFG
Similar
MMBT3906 RFG
Taiwan Semiconductor CorporationIn Stock: 106496MMBT3906 RFG Datasheet
MMBT3906 RFG
Similar
MMBT3906L RFG
Taiwan Semiconductor CorporationIn Stock: 71231MMBT3906L RFG Datasheet
MMBT3906L RFG
Similar
MSA1162GT1G
onsemiIn Stock: 155206MSA1162GT1G Datasheet
MSA1162GT1G
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 150 mA
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 150 mW
Frequency - Transition 80 MHz
Operating Temperature (TJ) 125 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SA1162-GR,LF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP configuration required
  • Voltage - Collector Emitter Breakdown (Max): Minimum 50 V
  • Current - Collector (Ic) (Max): Minimum 150 mA
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, or SOT-23-3 compatible
  • RoHS3 Compliance: Required
  • Moisture Sensitivity Level: MSL 1 acceptable

Parametric Equivalent Classification: Parts meeting all primary criteria with identical electrical specifications are classified as parametric equivalents. The 2SA1162-O,LF from Toshiba meets all parameters identically and represents a direct parametric equivalent.

Similar Part Classification: Parts meeting the primary criteria but with variations in secondary parameters (such as Vce saturation characteristics, DC current gain ranges, power dissipation, or transition frequency) are classified as similar parts. These components function as substitutes in applications where the specific parameter variations do not impact circuit performance.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce Breakdown (Max) V Power (Max) mW Frequency (Transition) MHz Operating Temp (TJ) °C Package Product Status
2SA1162-GR,LF Toshiba 150 50 150 80 125 SOT-23-3 Active
2SA1162-O,LF Toshiba 150 50 150 80 125 SOT-23-3 Active
2SA1037AKT146Q Rohm 150 50 200 140 150 SOT-23-3 Active
2SA1037AKT146R Rohm 150 50 200 140 150 SOT-23-3 Active
BC857A RFG Taiwan Semiconductor 100 45 200 100 150 SOT-23-3 Active
BC857B RFG Taiwan Semiconductor 100 45 200 100 150 SOT-23-3 Active
BC857C RFG Taiwan Semiconductor 100 45 200 100 150 SOT-23-3 Active
MMBT3906 RFG Taiwan Semiconductor 200 40 350 250 150 SOT-23-3 Active
MMBT3906L RFG Taiwan Semiconductor 200 40 350 250 150 SOT-23-3 Obsolete
MSA1162GT1G onsemi 100 50 200 80 150 SOT-23-3 Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement): The 2SA1162-O,LF is a parametric equivalent to the 2SA1162-GR,LF. Both components share identical electrical specifications and packaging. This part is suitable for direct substitution without circuit modification.

Active Status Substitutes: The following parts maintain Active product status and RoHS3 compliance:

  • 2SA1037AKT146Q and 2SA1037AKT146R (Rohm): These components provide enhanced performance with higher power dissipation (200 mW), increased transition frequency (140 MHz), and higher maximum operating temperature (150°C). Suitable for applications requiring improved thermal performance or higher frequency operation.
  • MSA1162GT1G (onsemi): This part matches the 50 V breakdown voltage and 80 MHz transition frequency of the primary part while offering 200 mW power dissipation and 150°C maximum operating temperature. Suitable for direct substitution in applications where the reduced collector current (100 mA vs. 150 mA) is acceptable.
  • BC857A RFG, BC857B RFG, BC857C RFG (Taiwan Semiconductor): These components operate at reduced voltage (45 V) and current (100 mA) ratings. Suitable only for applications where the lower electrical ratings do not constrain circuit performance.
  • MMBT3906 RFG (Taiwan Semiconductor): This part operates at reduced voltage (40 V) but provides higher collector current (200 mA) and power dissipation (350 mW). Suitable for applications requiring higher current capability but operating at lower voltages.

Obsolete Status: MMBT3906L RFG is classified as Obsolete and should not be selected for new designs or long-term production applications.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1162-O,LF replace the 2SA1162-GR,LF without any circuit modifications?

A: Yes. The 2SA1162-O,LF is a parametric equivalent with identical electrical and mechanical specifications. Direct substitution is possible without circuit modification.

Q: What is the primary difference between the Rohm 2SA1037AKT146Q and the Toshiba 2SA1162-GR,LF?

A: Both parts meet the core electrical requirements (150 mA collector current, 50 V breakdown voltage). The Rohm part offers higher power dissipation (200 mW vs. 150 mW), higher transition frequency (140 MHz vs. 80 MHz), and higher maximum operating temperature (150°C vs. 125°C). Selection depends on whether the application requires these enhanced characteristics.

Q: Can the BC857 series parts substitute for the 2SA1162-GR,LF?

A: The BC857 series (BC857A RFG, BC857B RFG, BC857C RFG) operate at reduced voltage (45 V) and current (100 mA) ratings compared to the 2SA1162-GR,LF (50 V, 150 mA). These parts are suitable only if the application circuit operates within these lower electrical limits.

Q: Why is MMBT3906L RFG listed as Obsolete?

A: MMBT3906L RFG carries an Obsolete product status designation. This part should not be selected for new designs or applications requiring long-term component availability.

Q: Are all substitute parts available in the same SOT-23-3 package?

A: Yes. All listed substitute parts are packaged in the TO-236-3, SC-59, or SOT-23-3 form factor, ensuring mechanical compatibility with the original 2SA1162-GR,LF footprint.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts listed with Active product status maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the compliance profile of the 2SA1162-GR,LF.

Q: Can the MMBT3906 RFG replace the 2SA1162-GR,LF in all applications?

A: The MMBT3906 RFG operates at a reduced maximum voltage (40 V vs. 50 V). Substitution is possible only in applications where the circuit operates below 40 V. The part offers higher collector current (200 mA) and power dissipation (350 mW), which may benefit applications requiring these characteristics.

Q: What is the difference between the DC current gain specifications across substitute parts?

A: DC current gain (hFE) varies across parts and is measured at different collector current and voltage conditions. The 2SA1162-GR,LF specifies hFE minimum of 200 @ 2mA, 6V. Substitute parts may have different hFE specifications measured at different operating points. Circuit designs relying on specific gain characteristics should verify compatibility with the selected substitute part's gain specification.

Request Quote (Ships tomorrow)