2SA1083-E-AP Equivalent & Substitute Parts

Part Overview

The 2SA1083-E-AP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, housed in a TO-92 through-hole package. This component is rated for 60 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 400 mW power dissipation. The device operates across a temperature range of -55°C to 150°C and features a 90 MHz transition frequency.

The 2SA1083-E-AP is classified as obsolete. Substitute components are necessary to maintain design continuity and ensure ongoing component availability for new production runs and field replacements.

Substiute Parts

2SA1083-E-AP

Micro Commercial CoIn Stock: 9552SA1083-E-AP Datasheet

Current PartRFQ

BC556BTA

Fairchild SemiconductorIn Stock: 18331BC556BTA Datasheet

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BC557ATA

Fairchild SemiconductorIn Stock: 860BC557ATA Datasheet

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BC557BTA

onsemiIn Stock: 6210BC557BTA Datasheet

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BC557BTF

onsemiIn Stock: 41658BC557BTF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SA1083-E-AP is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Transistor type must be PNP
• Maximum collector current must be equal to or greater than 100 mA
• Collector-emitter breakdown voltage must be equal to or greater than 60 V
• Power dissipation must be equal to or greater than 400 mW
• Transition frequency must support the operating bandwidth requirements
• DC current gain must be sufficient for the intended application

Mechanical Compatibility Criteria:

• Package type must be TO-92-3 through-hole configuration
• Lead formation must be compatible with existing PCB layouts

Compliance Criteria:

• RoHS3 compliance required
• Active product status preferred for long-term availability

The substitute parts listed below meet these criteria with electrical ratings equal to or exceeding the original specification, ensuring functional equivalence in circuit applications.

Parameter Comparison

Engineering Selection Recommendations

BC556BTA (Fairchild Semiconductor)

The BC556BTA provides the highest collector-emitter breakdown voltage rating at 65 V, exceeding the 2SA1083-E-AP specification of 60 V. This part is active and maintains full electrical compatibility with 100 mA collector current and 500 mW power dissipation. The 150 MHz transition frequency exceeds the original 90 MHz specification. This substitute is suitable for applications requiring maximum voltage headroom.

BC557BTA and BC557BTF (onsemi)

Both BC557BTA and BC557BTF are manufactured by onsemi and carry active product status with RoHS3 compliance certification. These parts are rated for 45 V collector-emitter breakdown voltage, which is below the original 60 V specification. Both devices support 100 mA collector current, 500 mW power dissipation, and 150 MHz transition frequency. These substitutes are suitable for applications where the circuit operates below 45 V. The BC557BTF variant has significantly higher inventory availability (41,626 pcs) compared to BC557BTA (6,200 pcs).

BC557ATA (Fairchild Semiconductor)

The BC557ATA is rated for 45 V collector-emitter breakdown voltage with 100 mA collector current and 500 mW power dissipation. This part carries active product status. The DC current gain minimum of 110 @ 2 mA, 5 V is lower than other substitutes. This part is suitable for applications operating below 45 V where lower current gain is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the BC557BTA or BC557BTF replace the 2SA1083-E-AP in all applications?

A: The BC557BTA and BC557BTF are suitable substitutes only for applications where the circuit operates at collector-emitter voltages of 45 V or below. If the original design requires operation at voltages between 45 V and 60 V, the BC556BTA is the appropriate substitute. Both onsemi parts maintain electrical compatibility for current, power dissipation, and frequency requirements.

Q: What is the difference between BC557BTA and BC557BTF?

A: BC557BTA and BC557BTF are electrically identical PNP transistors from onsemi with identical electrical specifications. The primary difference is packaging format: BC557BTA is supplied in bulk packaging, while BC557BTF is supplied in cut tape format. BC557BTF has higher inventory availability. Both are RoHS3 compliant and carry active product status.

Q: Why does the BC556BTA have a higher voltage rating than the original 2SA1083-E-AP?

A: The BC556BTA is rated for 65 V collector-emitter breakdown voltage compared to the 2SA1083-E-AP at 60 V. Higher voltage ratings do not prevent substitution; they indicate the device can safely operate at higher voltages. The BC556BTA is fully compatible with applications designed for 60 V operation.

Q: Are all substitute parts available in the same TO-92-3 package?

A: Yes. All substitute parts listed—BC556BTA, BC557ATA, BC557BTA, and BC557BTF—are housed in the TO-92-3 through-hole package with formed leads compatible with standard PCB layouts designed for the 2SA1083-E-AP.

Q: What is the significance of the DC current gain differences between substitutes?

A: The 2SA1083-E-AP specifies a minimum DC current gain of 400 @ 2 mA, 12 V. The BC556BTA and BC557BTA/BTF specify 200 @ 2 mA, 5 V, while BC557ATA specifies 110 @ 2 mA, 5 V. Lower current gain values do not prevent substitution but may require circuit design verification if the original design relies on specific gain characteristics. Applications using these transistors in saturation mode or with fixed base current are unaffected by gain variations.

Q: Which substitute offers the best long-term availability?

A: BC557BTF from onsemi offers the highest inventory level at 41,626 pieces in stock and carries active product status, ensuring long-term availability for production and field replacement requirements.