2SA1083-D-AP Equivalent & Substitute Parts

Part Overview

The 2SA1083-D-AP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, housed in a TO-92 through-hole package. This component is rated for 60 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 400 mW power dissipation. The device operates across a temperature range of -55°C to 150°C and features a 90 MHz transition frequency.

The 2SA1083-D-AP is classified as obsolete. Substitute components are necessary to maintain design continuity and ensure ongoing availability for new production builds and field replacements.

Substiute Parts

2SA1083-D-AP
Micro Commercial CoIn Stock: 9862SA1083-D-AP Datasheet
2SA1083-D-AP
Current Part
BC556BTA
Fairchild SemiconductorIn Stock: 18331BC556BTA Datasheet
BC556BTA
Similar
BC557ATA
Fairchild SemiconductorIn Stock: 860BC557ATA Datasheet
BC557ATA
Similar
BC557BTA
onsemiIn Stock: 6210BC557BTA Datasheet
BC557BTA
Similar
BC557BTF
onsemiIn Stock: 41658BC557BTF Datasheet
BC557BTF
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 60 V
Power Dissipation (Max) 400 mW
Transition Frequency 90 MHz
Operating Temperature Range -55 to 150 °C
Package Type TO-92-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the 2SA1083-D-AP is determined by the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Transistor polarity: PNP
  • Collector current rating: 100 mA minimum
  • Collector-emitter breakdown voltage: must equal or exceed 60 V
  • Power dissipation: must equal or exceed 400 mW
  • Package type: TO-92-3 through-hole configuration
  • Mounting type: Through hole

Acceptable Variation Parameters:

  • Transition frequency: may exceed 90 MHz
  • DC current gain (hFE): may differ from 250 @ 2mA, 12V
  • Vce saturation: may differ within acceptable operating ranges
  • Collector cutoff current (ICBO): may be lower than 100 nA

All substitute parts listed maintain PNP polarity, 100 mA collector current capability, and TO-92-3 through-hole packaging. Substitutes with collector-emitter breakdown voltages of 45 V operate within reduced voltage margins compared to the original 60 V specification and are suitable only for applications where the circuit voltage does not exceed 45 V.

Parameter Comparison

Parameter 2SA1083-D-AP BC556BTA BC557ATA BC557BTA BC557BTF
Manufacturer Micro Commercial Co Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi
Transistor Type PNP PNP PNP PNP PNP
Collector Current (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Collector-Emitter Breakdown Voltage (Max) 60 V 65 V 45 V 45 V 45 V
Power Dissipation (Max) 400 mW 500 mW 500 mW 500 mW 500 mW
Transition Frequency 90 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Operating Temperature (Max) 150°C 150°C 150°C 150°C 150°C
Package / Case TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Product Status Obsolete Active Active Active Active
RoHS Compliance ROHS3 Compliant Not specified Not specified ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

BC556BTA (Fairchild Semiconductor)

The BC556BTA provides the highest collector-emitter breakdown voltage among available substitutes at 65 V, exceeding the original 2SA1083-D-AP specification of 60 V. This part delivers 500 mW power dissipation, 150 MHz transition frequency, and maintains 100 mA collector current capability. The BC556BTA is classified as active product status, ensuring long-term availability. This substitute is suitable for applications requiring voltage margins equal to or greater than the original design.

BC557BTF (onsemi)

The BC557BTF is an active product from onsemi with ROHS3 compliance and REACH unaffected status. It provides 45 V collector-emitter breakdown voltage, 500 mW power dissipation, and 150 MHz transition frequency. This substitute is suitable for applications where circuit voltage does not exceed 45 V. The BC557BTF offers the highest inventory availability among all substitutes at 41,626 pieces in stock.

BC557BTA (onsemi)

The BC557BTA is an active product from onsemi with ROHS3 compliance and REACH unaffected status. It provides 45 V collector-emitter breakdown voltage, 500 mW power dissipation, and 150 MHz transition frequency. This substitute is suitable for applications where circuit voltage does not exceed 45 V.

BC557ATA (Fairchild Semiconductor)

The BC557ATA is an active product with 45 V collector-emitter breakdown voltage, 500 mW power dissipation, and 150 MHz transition frequency. This substitute is suitable for applications where circuit voltage does not exceed 45 V. Inventory availability is limited at 779 pieces.

Frequently Asked Questions (FAQ)

Q: Can the BC557BTF replace the 2SA1083-D-AP in all applications?

A: The BC557BTF is suitable for applications where the circuit voltage does not exceed 45 V. The original 2SA1083-D-AP is rated for 60 V collector-emitter breakdown. If your circuit operates at voltages between 45 V and 60 V, the BC557BTF is not appropriate. The BC556BTA, rated at 65 V, is suitable for all voltage ranges up to 60 V.

Q: What is the difference between BC557BTA and BC557BTF?

A: Both parts are manufactured by onsemi and share identical electrical specifications: 45 V collector-emitter breakdown voltage, 100 mA collector current, 500 mW power dissipation, and 150 MHz transition frequency. The primary difference is packaging: BC557BTA is supplied in Cut Tape (CT) format, while BC557BTF is also supplied in Cut Tape (CT) format. Both use TO-92-3 through-hole packages.

Q: Is the BC556BTA a direct replacement for the 2SA1083-D-AP?

A: The BC556BTA is a direct replacement from an electrical and mechanical standpoint. It maintains PNP polarity, 100 mA collector current, TO-92-3 through-hole packaging, and exceeds the original 60 V breakdown voltage specification at 65 V. Power dissipation is increased to 500 mW, and transition frequency is increased to 150 MHz. The BC556BTA is manufactured by Fairchild Semiconductor and is classified as active product status.

Q: Why do some substitutes have lower breakdown voltages than the original part?

A: The BC557 series (BC557ATA, BC557BTA, BC557BTF) are rated at 45 V collector-emitter breakdown voltage, which is lower than the original 2SA1083-D-AP at 60 V. These parts are suitable only for circuits designed to operate at 45 V or below. For applications requiring the full 60 V rating, the BC556BTA at 65 V is the appropriate substitute.

Q: Are all substitute parts RoHS compliant?

A: The BC557BTA and BC557BTF are explicitly ROHS3 compliant. The BC556BTA and BC557ATA do not specify RoHS compliance status in the provided data. If RoHS compliance is a requirement for your application, the BC557BTA or BC557BTF are confirmed compliant options.

Q: Can I use these substitutes in surface-mount applications?

A: No. All listed substitutes, including the original 2SA1083-D-AP, are through-hole components in TO-92-3 packages. They are not suitable for surface-mount applications. Surface-mount PNP transistor alternatives would require a different package type such as SOT-23 or SOT-89.

Q: What is the inventory status of each substitute?

A: BC557BTF has the highest availability at 41,626 pieces. BC556BTA has 18,244 pieces available. BC557BTA has 6,200 pieces available. BC557ATA has the lowest availability at 779 pieces. The original 2SA1083-D-AP has 928 pieces in stock but is classified as obsolete.

Request Quote (Ships tomorrow)