2PD602AS,115 NPN Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The 2PD602AS,115 is an NPN bipolar junction transistor manufactured by NXP USA Inc., designed for surface mount applications in the SOT-23-3 (TO-236) package. This device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 250 mW power dissipation. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and continued availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	250	mW
Frequency - Transition	180	MHz
Vce Saturation (Max) @ Ib, Ic	600mV @ 30mA, 300mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	170 @ 150mA, 10V	—
Operating Temperature (Max)	150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2PD602AS,115 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50 V minimum
Current - Collector (Ic) (Max): 500 mA minimum
Package / Case: TO-236-3, SC-59, or SOT-23-3
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Secondary Compatibility Parameters:

Vce Saturation characteristics
DC Current Gain (hFE) specifications
Operating Temperature range
Power dissipation capability

Substitute parts are grouped into two categories:

Category 1: Manufacturer Recommended Substitutes — Parts meeting or exceeding all primary electrical parameters with active product status and full manufacturer support.

Category 2: Parametric Equivalents — Parts with identical or superior electrical specifications, including automotive-grade variants with AEC-Q101 qualification.

Parts with reduced collector current (FMMT413TD at 100 mA) or increased current capability (FMMT619TA at 2 A) are listed as alternatives for specific application requirements but require circuit validation.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Power mW	fT MHz	Package	Status
2PD602AS,115	NXP USA Inc.	500	50	250	180	SOT-23-3	Obsolete
2SC3325-Y,LF	Toshiba Semiconductor	500	50	200	300	SOT-23-3	Active
BC817-40LT1G	onsemi	500	45	300	100	SOT-23-3	Active
FMMT413TD	Diodes Incorporated	100	50	330	150	SOT-23-3	Active
FMMT619TA	Diodes Incorporated	2000	50	625	165	SOT-23-3	Active
MMBT6428LT1G	onsemi	200	50	225	700	SOT-23-3	Active
MSD602-RT1G	onsemi	500	50	200	—	SC-59	Active
NSVBC817-16LT1G	onsemi	500	45	225	100	SOT-23-3	Active
2PD602ASL,215	Nexperia USA Inc.	500	50	250	180	TO-236AB	Active
2PD602ASL,235	Nexperia USA Inc.	500	50	250	180	TO-236AB	Active
2PD602ASL-QR	Nexperia USA Inc.	500	50	250	180	TO-236AB	Active

Engineering Selection Recommendations

Direct Replacement (Highest Compatibility):

The parametric equivalents 2PD602ASL,215, 2PD602ASL,235, and 2PD602ASL-QR from Nexperia USA Inc. provide identical electrical specifications to the obsolete 2PD602AS,115. These parts maintain the same 50 V breakdown voltage, 500 mA collector current, 250 mW power rating, and 180 MHz transition frequency. The 2PD602ASL variants are available in active product status with ROHS3 compliance and AEC-Q101 automotive qualification. These are the preferred replacements for direct substitution in existing designs.

Manufacturer Recommended Alternatives (Full Parameter Match):

The 2SC3325-Y,LF from Toshiba Semiconductor and MSD602-RT1G from onsemi both meet the primary electrical requirements with 500 mA collector current and 50 V breakdown voltage. The 2SC3325-Y,LF offers superior transition frequency at 300 MHz. Both parts are in active production status with ROHS3 compliance and unlimited moisture sensitivity rating.

Voltage-Reduced Alternatives:

The BC817-40LT1G and NSVBC817-16LT1G from onsemi operate at 45 V collector-emitter breakdown voltage, which is 5 V lower than the original specification. These parts maintain 500 mA collector current capability and are suitable for applications where the reduced voltage rating does not impact circuit performance. Both are active products with extended operating temperature range (-65°C to 150°C) and ROHS3 compliance.

Current-Limited Alternative:

The MMBT6428LT1G from onsemi is rated for 200 mA maximum collector current, which is 60% of the original 500 mA specification. This part offers exceptional transition frequency at 700 MHz and is suitable only for low-current signal amplification applications. Direct substitution in circuits requiring 500 mA operation is not permitted.

High-Current Alternative:

The FMMT619TA from Diodes Incorporated provides 2 A collector current capability, exceeding the original 500 mA specification by 4x. This part is suitable for applications requiring higher current handling. The FMMT413TD from the same manufacturer is rated for 100 mA and is not recommended for direct replacement.

Compliance and Certification:

All recommended substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). The Nexperia variants include AEC-Q101 automotive qualification, suitable for automotive and industrial applications requiring enhanced reliability standards.

Frequently Asked Questions (FAQ)

Q1: Can the 2PD602ASL,215 directly replace the obsolete 2PD602AS,115?

Yes. The 2PD602ASL,215 is a parametric equivalent with identical electrical specifications: 50 V breakdown voltage, 500 mA collector current, 250 mW power dissipation, and 180 MHz transition frequency. Both parts use the SOT-23-3 package. The primary difference is product status (active versus obsolete) and packaging format (Tape & Reel versus bulk). No circuit modifications are required.

Q2: What is the difference between the 2PD602ASL variants (,215, ,235, and -QR)?

All three variants—2PD602ASL,215, 2PD602ASL,235, and 2PD602ASL-QR—share identical electrical specifications and package type (TO-236AB). The suffix designations indicate different packaging configurations and manufacturing batches. The -QR variant is qualified for automotive applications. Selection among these variants depends on packaging requirements and supply chain availability.

Q3: Why is the BC817-40LT1G listed as a substitute if it has only 45 V breakdown voltage?

The BC817-40LT1G meets the primary substitution criteria for transistor type (NPN), collector current (500 mA), package (SOT-23-3), and mounting type (surface mount). The 45 V breakdown voltage is 5 V lower than the original 50 V specification. This part is suitable for applications where the circuit design does not require the full 50 V rating. Circuit validation is necessary to confirm voltage margin adequacy.

Q4: Can the MMBT6428LT1G be used as a direct replacement?

No. The MMBT6428LT1G is rated for 200 mA maximum collector current, which is insufficient for applications requiring the full 500 mA capability of the original 2PD602AS,115. This part is suitable only for low-current signal amplification circuits. Direct substitution in high-current applications will result in device failure or performance degradation.

Q5: What are the advantages of the 2SC3325-Y,LF over the original part?

The 2SC3325-Y,LF maintains the same 50 V breakdown voltage and 500 mA collector current as the original 2PD602AS,115. The primary advantage is superior transition frequency: 300 MHz versus 180 MHz. This higher frequency capability provides improved performance in high-speed switching applications. The part is in active production status with full manufacturer support and ROHS3 compliance.

Q6: Is the FMMT619TA suitable for direct replacement in all applications?

No. The FMMT619TA is rated for 2 A collector current, which is 4x the original 500 mA specification. While this part meets the 50 V breakdown voltage requirement and uses the SOT-23-3 package, the significantly higher current rating may introduce unintended circuit behavior. This part is suitable only for applications requiring higher current handling. Circuit validation is required before substitution.

Q7: Are all substitute parts ROHS3 compliant?

Yes. All substitute parts listed in this reference document are ROHS3 compliant. All parts also maintain unlimited moisture sensitivity rating (MSL 1), indicating no special storage or handling requirements beyond standard component practices.

Q8: Which substitute part offers the best high-frequency performance?

The MMBT6428LT1G from onsemi offers the highest transition frequency at 700 MHz, compared to 180 MHz for the original 2PD602AS,115. However, this part is limited to 200 mA collector current. For applications requiring both high frequency and 500 mA current capability, the 2SC3325-Y,LF at 300 MHz is the optimal choice.

Q9: What is the difference between SOT-23-3 and SC-59 packages?

Both SOT-23-3 and SC-59 are equivalent package designations for the same physical form factor (TO-236-3). The MSD602-RT1G uses the SC-59 designation while other parts use SOT-23-3. These packages are mechanically and electrically interchangeable. PCB footprints designed for one designation will accommodate the other without modification.

Q10: Are the Nexperia 2PD602ASL variants suitable for automotive applications?

Yes. The 2PD602ASL,215, 2PD602ASL,235, and 2PD602ASL-QR variants include AEC-Q101 automotive qualification, indicating compliance with automotive reliability and quality standards. These parts are suitable for automotive and industrial applications requiring enhanced qualification documentation.

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