2PD602ARL,215 Equivalent & Substitute Parts

Part Overview

The 2PD602ARL,215 is an NPN bipolar junction transistor manufactured by Nexperia USA Inc., designed for general-purpose switching and amplification applications. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and power dissipation of 250 mW. The part is classified as Active product status with AEC-Q101 automotive qualification and ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges for this TO-236AB package category.

Substiute Parts

2PD602ARL,215
Nexperia USA Inc.In Stock: 27762PD602ARL,215 Datasheet
2PD602ARL,215
Current Part
MSD602-RT1G
onsemiIn Stock: 8354MSD602-RT1G Datasheet
MSD602-RT1G
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SBCX19LT1G
onsemiIn Stock: 3497SBCX19LT1G Datasheet
SBCX19LT1G
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SMSD602-RT1G
onsemiIn Stock: 20162SMSD602-RT1G Datasheet
SMSD602-RT1G
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2SC3325-Y,LF
Toshiba Semiconductor and StorageIn Stock: 31202SC3325-Y,LF Datasheet
2SC3325-Y,LF
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50C02CH-TL-E
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50C02CH-TL-E
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BC817-16 RFG
Taiwan Semiconductor CorporationIn Stock: 7192BC817-16 RFG Datasheet
BC817-16 RFG
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BC817-25 RFG
Taiwan Semiconductor CorporationIn Stock: 86328BC817-25 RFG Datasheet
BC817-25 RFG
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BC817-25LT1G
onsemiIn Stock: 245735BC817-25LT1G Datasheet
BC817-25LT1G
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BC817-40 RFG
Taiwan Semiconductor CorporationIn Stock: 5646BC817-40 RFG Datasheet
BC817-40 RFG
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BC817-40LT1G
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BC817-40LT1G
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BC817-40LT3G
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BC817-40Q-13-F
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BC817-40Q-7-F
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FMMT413TD
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FMMT619TA
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MMBT2222A RFG
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MMBT2222A RFG
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MMBT6428LT1G
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MMBT6428LT1G
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MMBTA05LT1G
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NSVBC817-16LT1G
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SBC817-16LT3G
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Breakdown Voltage (Max) 50 V
Collector Current (Max) 500 mA
Power Dissipation (Max) 250 mW
DC Current Gain (hFE Min) 120 @ 150mA, 10V
Vce Saturation (Max) 600 mV @ 30mA, 300mA
Transition Frequency 160 MHz
Operating Temperature (Max) 150 °C
Package Type TO-236AB (SOT-23-3)
Mounting Type Surface Mount
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitution of the 2PD602ARL,215 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN (required match)
  • Collector-Emitter Breakdown Voltage: minimum 50 V
  • Collector Current: minimum 500 mA
  • Power Dissipation: minimum 250 mW
  • DC Current Gain (hFE): minimum 120 at specified test conditions
  • Package/Case: TO-236-3, SC-59, or SOT-23-3 surface mount configurations
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant

Direct Substitutes are parts that meet or exceed all primary criteria with identical or superior electrical specifications and compatible packaging.

Similar Substitutes are parts that meet core electrical requirements (voltage, current, gain) but may have variations in secondary parameters such as transition frequency, power dissipation, or saturation voltage characteristics. These parts maintain functional compatibility within the specified parameter envelope.

Parts with collector-emitter breakdown voltage below 50 V (such as 45 V rated devices) are classified as similar substitutes due to reduced voltage margin, though they remain functionally compatible for applications not requiring the full 50 V rating.

Parameter Comparison

Part Number Manufacturer Vce(BR) Max (V) Ic Max (mA) Power Max (mW) hFE Min Vce Sat (mV) fT (MHz) Package Substitution Type
2PD602ARL,215 Nexperia USA Inc. 50 500 250 120 600 160 TO-236AB Reference Part
MSD602-RT1G onsemi 50 500 200 120 600 SC-59 Direct
SMSD602-RT1G onsemi 50 500 200 120 600 SC-59 Direct
SBCX19LT1G onsemi 45 500 300 100 620 SOT-23-3 Similar
2SC3325-Y,LF Toshiba Semiconductor and Storage 50 500 200 120 250 300 S-Mini Similar
50C02CH-TL-E onsemi 50 500 700 300 100 500 3-CPH Similar
BC817-16 RFG Taiwan Semiconductor Corporation 45 500 300 100 700 100 SOT-23 Similar
BC817-25 RFG Taiwan Semiconductor Corporation 45 500 300 160 700 100 SOT-23 Similar
BC817-25LT1G onsemi 45 500 300 160 700 100 SOT-23-3 Similar
BC817-40 RFG Taiwan Semiconductor Corporation 45 500 300 250 700 100 SOT-23 Similar
BC817-40LT1G onsemi 45 500 300 250 700 100 SOT-23-3 Similar

Engineering Selection Recommendations

Direct Substitutes (MSD602-RT1G, SMSD602-RT1G): These parts maintain identical electrical specifications to the 2PD602ARL,215 across all critical parameters: 50 V breakdown voltage, 500 mA collector current, 120 minimum hFE, and 600 mV saturation voltage. Both are manufactured by onsemi with ROHS3 compliance and Active product status. The primary difference is packaging configuration (SC-59 versus TO-236AB), which remains compatible within the TO-236-3 family. SMSD602-RT1G offers higher inventory availability (20,100 units) compared to MSD602-RT1G (8,300 units).

Similar Substitutes (SBCX19LT1G, BC817 Series, 2SC3325-Y,LF, 50C02CH-TL-E): These parts satisfy core functional requirements but with parameter variations requiring evaluation against specific application constraints:

  • SBCX19LT1G and BC817 variants (45 V rated): Reduced collector-emitter breakdown voltage (45 V versus 50 V) limits application to circuits not requiring full 50 V margin. BC817-25LT1G and BC817-40LT1G offer higher current gain (160 and 250 respectively) compared to the reference part (120). All BC817 variants are AEC-Q101 qualified with ROHS3 compliance. BC817-25LT1G provides highest inventory (245,644 units).

  • 2SC3325-Y,LF: Maintains 50 V rating with superior transition frequency (300 MHz versus 160 MHz) and lower saturation voltage (250 mV versus 600 mV), beneficial for high-speed switching applications. Toshiba manufacturing with ROHS3 compliance.

  • 50C02CH-TL-E: Offers highest power dissipation (700 mW) and transition frequency (500 MHz) with superior current gain (300 hFE), suitable for high-frequency or high-power applications. Maintains 50 V rating with ROHS3 compliance.

All substitute parts are Active product status with ROHS3 compliance and REACH unaffected designation, meeting regulatory requirements equivalent to the reference part.

Frequently Asked Questions (FAQ)

Q: Can MSD602-RT1G or SMSD602-RT1G be used as direct replacements for 2PD602ARL,215?

A: Yes. Both parts meet all electrical specifications of the reference part: 50 V breakdown voltage, 500 mA collector current, 120 minimum hFE, and 600 mV saturation voltage. Packaging remains within the TO-236-3 family (SC-59 configuration). No circuit modifications are required.

Q: What is the primary limitation of BC817 series substitutes?

A: BC817 variants are rated at 45 V collector-emitter breakdown voltage compared to the 50 V rating of the 2PD602ARL,215. This 5 V reduction in voltage margin may be unsuitable for applications operating near maximum voltage specifications. BC817 parts remain functionally compatible for applications with adequate voltage headroom below 45 V.

Q: How does the 2SC3325-Y,LF differ from the reference part?

A: The 2SC3325-Y,LF maintains the 50 V rating and 500 mA current specification but offers improved high-frequency performance (300 MHz transition frequency versus 160 MHz) and significantly lower saturation voltage (250 mV versus 600 mV). These characteristics make it suitable for faster switching applications while maintaining voltage compatibility.

Q: Are all substitute parts automotive qualified?

A: SBCX19LT1G and BC817 series parts carry AEC-Q101 automotive qualification matching the reference part. MSD602-RT1G, SMSD602-RT1G, 2SC3325-Y,LF, and 50C02CH-TL-E do not list AEC-Q101 qualification in provided specifications. Automotive applications requiring AEC-Q101 certification should be limited to parts explicitly qualified.

Q: What packaging options are available among substitute parts?

A: Substitute parts are available in SC-59, SOT-23-3 (TO-236), S-Mini, and 3-CPH configurations. All remain compatible within the TO-236-3 surface mount family. Physical board layout may require adjustment for S-Mini or 3-CPH packages due to different lead configurations, though electrical functionality remains equivalent.

Q: Which substitute offers the highest current gain?

A: The 50C02CH-TL-E offers the highest minimum current gain at 300 hFE (@ 10mA, 2V) compared to the reference part at 120 hFE (@ 150mA, 10V). BC817-40 variants provide 250 hFE minimum. Higher current gain reduces base drive requirements in switching applications.

Q: Can 45 V rated parts be used in 50 V applications?

A: No. Applications requiring operation at or near 50 V collector-emitter voltage must use parts rated at 50 V or higher. BC817 series (45 V rated) are suitable only for applications with maximum operating voltage below 45 V. Exceeding rated voltage may result in device failure or reduced reliability.

Q: What is the inventory status of recommended substitutes?

A: SMSD602-RT1G offers the highest availability (20,100 units) among direct substitutes. BC817-25LT1G provides the largest inventory among similar substitutes (245,644 units). MSD602-RT1G (8,300 units), SBCX19LT1G (3,398 units), and 2SC3325-Y,LF (3,094 units) offer moderate availability. 50C02CH-TL-E (7,363 units) and BC817 RFG variants (5,598–7,087 units) provide intermediate stock levels.

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