2PD602AQL,215 NPN Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The 2PD602AQL,215 is an NPN bipolar junction transistor manufactured by Nexperia USA Inc., designed for general-purpose switching and amplification applications. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 250 mW power dissipation. The part is classified as Active product status with AEC-Q101 automotive qualification and ROHS3 compliance. Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible packaging and mounting characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Collector Current (Max)	500	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Power Dissipation (Max)	250	mW
Transition Frequency	140	MHz
Operating Temperature (Max)	150	°C
Package Type	TO-236-3 / SOT-23-3	—
Mounting Type	Surface Mount	—
Grade	Automotive	—
Qualification	AEC-Q101	—

Substitute Part Grouping Explanation

Substitute parts for the 2PD602AQL,215 are classified based on electrical parameter compatibility and packaging equivalence. The primary substitution criteria are:

Critical Parameters for Substitution:

Transistor type must be NPN
Collector current rating must be 500 mA
Collector-emitter breakdown voltage must be 50 V or greater
Package must be TO-236-3 / SOT-23-3 compatible
Mounting type must be surface mount
Operating temperature range must support 150°C maximum junction temperature

Substitution Categories:

Direct Substitutes maintain all critical electrical parameters within specification limits and are pin-compatible in TO-236-3 / SOT-23-3 packages.

Similar Substitutes meet the core electrical requirements (NPN type, 500 mA collector current, 50 V breakdown voltage, surface mount) but may have different package designations (S-Mini, 3-CPH) or slightly different power ratings that remain functionally equivalent for the application.

Partial Substitutes operate at reduced voltage ratings (45 V instead of 50 V) or different power dissipation levels but maintain 500 mA collector current and surface mount compatibility. These are suitable for applications where the 50 V specification is not a hard requirement.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce Breakdown (Max) V	Power (Max) mW	Frequency MHz	Package	Grade	AEC-Q101
2PD602AQL,215	Nexperia USA Inc.	500	50	250	140	TO-236AB	Automotive	Yes
SBCX19LT1G	onsemi	500	45	300	—	SOT-23-3	Automotive	Yes
2SC3325-Y,LF	Toshiba Semiconductor and Storage	500	50	200	300	S-Mini	—	—
50C02CH-TL-E	onsemi	500	50	700	500	3-CPH	—	—
BC817-16 RFG	Taiwan Semiconductor Corporation	500	45	300	100	SOT-23	—	—
BC817-16LT1G	onsemi	500	45	300	100	SOT-23-3	—	—
BC817-25 RFG	Taiwan Semiconductor Corporation	500	45	300	100	SOT-23	—	—
BC817-25LT1G	onsemi	500	45	300	100	SOT-23-3	—	—
BC817-40 RFG	Taiwan Semiconductor Corporation	500	45	300	100	SOT-23	—	—
BC817-40LT1G	onsemi	500	45	300	100	SOT-23-3	—	—
BC817-40Q-13-F	Diodes Incorporated	500	45	310	100	SOT-23-3	Automotive	Yes

Engineering Selection Recommendations

For Automotive Applications with AEC-Q101 Requirement:

The SBCX19LT1G (onsemi) and BC817-40Q-13-F (Diodes Incorporated) are qualified substitutes when automotive-grade components with AEC-Q101 certification are required. Both maintain Active product status and ROHS3 compliance. The SBCX19LT1G operates at 45 V breakdown voltage, which is acceptable for applications where 50 V is not a hard specification limit. The BC817-40Q-13-F provides equivalent automotive qualification with slightly higher power rating (310 mW vs. 250 mW).

For General-Purpose Applications Without Automotive Constraints:

The BC817-16LT1G, BC817-25LT1G, and BC817-40LT1G (all onsemi) provide compatible SOT-23-3 packaging with 45 V breakdown voltage and 300 mW power dissipation. These parts are suitable for non-automotive applications where the reduced voltage specification is acceptable.

For Applications Requiring 50 V Specification:

The 2SC3325-Y,LF (Toshiba) maintains the 50 V collector-emitter breakdown voltage specification. This part operates in S-Mini package format and provides higher transition frequency (300 MHz) compared to the primary part. The 50C02CH-TL-E (onsemi) also maintains 50 V specification with significantly higher power dissipation (700 mW) and transition frequency (500 MHz), suitable for higher-performance applications.

Compliance and Status Considerations:

All listed substitute parts maintain Active product status and ROHS3 compliance. Parts with automotive grade and AEC-Q101 qualification are restricted to SBCX19LT1G and BC817-40Q-13-F. Selection should prioritize compliance requirements specific to the application environment.

Frequently Asked Questions (FAQ)

Q: Can the SBCX19LT1G replace the 2PD602AQL,215 in a 50 V application?

A: The SBCX19LT1G operates at 45 V maximum collector-emitter breakdown voltage, compared to 50 V for the 2PD602AQL,215. Substitution is acceptable only if the application circuit operates below 45 V. If the design requires the full 50 V specification, use 2SC3325-Y,LF or 50C02CH-TL-E instead.

Q: Are BC817 variants (BC817-16LT1G, BC817-25LT1G, BC817-40LT1G) direct replacements?

A: BC817 variants are functionally compatible in terms of collector current (500 mA) and package type (SOT-23-3). However, they operate at 45 V breakdown voltage and 100 MHz transition frequency, compared to 50 V and 140 MHz for the 2PD602AQL,215. The suffix numbers (16, 25, 40) indicate different DC current gain specifications. These parts are suitable for applications where voltage and frequency specifications are not limiting factors.

Q: What is the difference between TO-236AB and SOT-23-3 packaging?

A: TO-236AB and SOT-23-3 are equivalent package designations for the same three-lead surface mount package. Both refer to the same physical form factor and pin configuration. Parts specified as SOT-23-3 (TO-236) are directly compatible with TO-236AB footprints.

Q: Is the 50C02CH-TL-E suitable for the same applications as the 2PD602AQL,215?

A: The 50C02CH-TL-E maintains the 50 V specification and 500 mA collector current. However, it operates in a 3-CPH package format rather than TO-236-3 / SOT-23-3, requiring different PCB footprint design. The significantly higher power rating (700 mW vs. 250 mW) and transition frequency (500 MHz vs. 140 MHz) make it suitable for higher-performance applications but may introduce unnecessary cost and complexity for standard switching applications.

Q: Which substitute part is recommended for automotive applications?

A: For automotive applications requiring AEC-Q101 qualification, use either SBCX19LT1G (onsemi) or BC817-40Q-13-F (Diodes Incorporated). Both maintain automotive grade status and AEC-Q101 certification. The SBCX19LT1G provides higher power dissipation (300 mW) and is available in higher inventory quantities.

Q: Can I use BC817-40Q-13-F as a direct replacement in automotive designs?

A: Yes. The BC817-40Q-13-F is automotive-grade with AEC-Q101 qualification, operates at 500 mA collector current, and uses SOT-23-3 packaging compatible with the 2PD602AQL,215 footprint. The 45 V breakdown voltage is the primary consideration; verify that the application circuit operates below this threshold.

Q: What is the significance of the DC current gain (hFE) differences between BC817 variants?

A: The BC817 suffix numbers indicate minimum DC current gain specifications: BC817-16 (100 @ 100mA, 1V), BC817-25 (160 @ 100mA, 1V), and BC817-40 (250 @ 100mA, 1V). Higher gain values reduce base current requirements for saturation. Selection depends on circuit design requirements; higher gain variants may improve efficiency in current-limited applications.

Q: Is the 2SC3325-Y,LF compatible with the original part's footprint?

A: The 2SC3325-Y,LF uses S-Mini package format, which differs from the TO-236-3 / SOT-23-3 footprint of the 2PD602AQL,215. PCB layout modification is required. However, it maintains the 50 V specification and provides higher transition frequency (300 MHz), making it suitable for applications requiring the original voltage rating with improved frequency performance.

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