2PB710ASL,215 Equivalent & Substitute Parts

Part Overview

The 2PB710ASL,215 is an active production PNP bipolar junction transistor manufactured by Nexperia USA Inc., rated for 50 V collector-emitter breakdown voltage and 500 mA maximum collector current. This surface mount device in TO-236AB packaging is designed for general-purpose switching and amplification applications requiring automotive-grade reliability. The part carries AEC-Q101 qualification and ROHS3 compliance.

Substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain disruptions, or application-specific performance needs within the defined electrical and mechanical parameter space.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Max)	500	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Power Dissipation (Max)	250	mW
Transition Frequency	140	MHz
Operating Temperature (Max)	150	°C
Package Type	TO-236-3 / SOT-23-3	—
Mounting Type	Surface Mount	—
Grade	Automotive	—
Qualification	AEC-Q101	—

Substitute Part Grouping Explanation

Substitute parts are classified into two categories based on electrical parameter alignment with the 2PB710ASL,215:

Parametric Equivalent: Parts that match all critical electrical specifications including collector current (500 mA), collector-emitter breakdown voltage (50 V), power dissipation (250 mW), and transition frequency (140 MHz). These parts are direct functional replacements with identical performance envelopes.

Similar Parts: Parts that satisfy the primary electrical requirements (PNP type, 500 mA collector current, 50 V breakdown voltage) but differ in one or more secondary parameters such as transition frequency, power dissipation, saturation voltage, or DC current gain. These parts are suitable for applications where the specific performance variance does not impact circuit operation.

Substitution eligibility is determined by:

Matching transistor type (PNP)
Collector current rating ≥ 500 mA
Collector-emitter breakdown voltage ≥ 50 V
Surface mount package compatibility (TO-236-3 / SOT-23-3)
Active product status
ROHS3 compliance

Parameter Comparison

Manufacturer Part Number	Manufacturer	Ic (Max) mA	Vce(br) (Max) V	Power (Max) mW	fT MHz	Tj (Max) °C	Package	Grade
2PB710ASL,215	Nexperia USA Inc.	500	50	250	140	150	TO-236AB	Automotive
2PB710ASL,235	Nexperia USA Inc.	500	50	250	140	150	TO-236AB	Automotive
2SA1162-GR,LF	Toshiba Semiconductor and Storage	150	50	150	80	125	S-Mini	—
2SA1313-Y,LF	Toshiba Semiconductor and Storage	500	50	200	200	150	S-Mini	—
50A02CH-TL-E	onsemi	500	50	700	690	150	3-CPH	—
50A02MH-TL-E	onsemi	500	50	600	690	150	3-MCPH	—
BC807-16 RFG	Taiwan Semiconductor Corporation	500	45	300	100	150	SOT-23	—
BC807-25 RFG	Taiwan Semiconductor Corporation	500	45	300	100	150	SOT-23	—
BC807-25LT1G	onsemi	500	45	300	100	150	SOT-23-3	—
BC807-40 RFG	Taiwan Semiconductor Corporation	500	45	300	100	150	SOT-23	—
MMBTA55-7-F	Diodes Incorporated	500	60	300	50	150	SOT-23-3	Automotive

Engineering Selection Recommendations

Parametric Equivalent Selection:

The 2PB710ASL,235 is a parametric equivalent to the 2PB710ASL,215. Both parts are manufactured by Nexperia USA Inc., carry identical electrical specifications, automotive grade qualification, and AEC-Q101 certification. This part is suitable for direct substitution in all applications where the 2PB710ASL,215 is specified.

Similar Part Selection:

Similar parts are suitable for substitution when application requirements permit variance in secondary electrical parameters:

2SA1313-Y,LF (Toshiba): Matches 500 mA collector current and 50 V breakdown voltage with higher transition frequency (200 MHz) and lower power dissipation (200 mW). Operating temperature maximum is 150°C. Suitable for applications requiring enhanced frequency response.
50A02CH-TL-E and 50A02MH-TL-E (onsemi): Match 500 mA collector current and 50 V breakdown voltage with significantly higher transition frequency (690 MHz) and power dissipation (700 mW and 600 mW respectively). Suitable for high-frequency switching applications.
BC807-16 RFG, BC807-25 RFG, BC807-25LT1G, BC807-40 RFG (Taiwan Semiconductor Corporation / onsemi): Match 500 mA collector current with 45 V breakdown voltage (5 V lower than primary part). Power dissipation is 300 mW. Transition frequency is 100 MHz. These parts are suitable for applications where 45 V breakdown voltage is acceptable.
MMBTA55-7-F (Diodes Incorporated): Matches 500 mA collector current with 60 V breakdown voltage (10 V higher than primary part). Carries automotive grade and AEC-Q101 qualification. Power dissipation is 300 mW with 50 MHz transition frequency. Suitable for applications requiring higher voltage margin.
2SA1162-GR,LF (Toshiba): Rated for 150 mA maximum collector current, which is below the 500 mA requirement of the primary part. This part is not suitable for direct substitution in applications requiring 500 mA operation.

Frequently Asked Questions (FAQ)

Q: Can the 2PB710ASL,235 be used as a direct replacement for the 2PB710ASL,215?

A: Yes. The 2PB710ASL,235 is a parametric equivalent with identical electrical specifications, automotive grade, and AEC-Q101 qualification. Both parts are manufactured by Nexperia USA Inc. in TO-236AB packaging.

Q: What is the primary difference between the 2PB710ASL,215 and the BC807-25LT1G?

A: The BC807-25LT1G has a collector-emitter breakdown voltage of 45 V compared to 50 V for the 2PB710ASL,215. Both parts support 500 mA collector current and are housed in compatible SOT-23-3 packages. The BC807-25LT1G is suitable for applications where 45 V breakdown voltage is acceptable.

Q: Is the 2SA1162-GR,LF a suitable substitute for the 2PB710ASL,215?

A: No. The 2SA1162-GR,LF is rated for a maximum collector current of 150 mA, which is insufficient for applications requiring the 500 mA capability of the 2PB710ASL,215.

Q: Can I use the MMBTA55-7-F in place of the 2PB710ASL,215?

A: The MMBTA55-7-F is suitable for substitution in applications where the higher 60 V collector-emitter breakdown voltage is acceptable. Both parts support 500 mA collector current, carry automotive grade qualification, and have compatible SOT-23-3 packaging. The MMBTA55-7-F has lower transition frequency (50 MHz versus 140 MHz) and higher power dissipation capability (300 mW).

Q: What are the package compatibility considerations for substitute parts?

A: The primary part 2PB710ASL,215 uses TO-236AB packaging (equivalent to SOT-23-3). Substitute parts listed use compatible surface mount packages including TO-236-3, SC-59, SOT-23-3, S-Mini, 3-CPH, and 3-MCPH. All packages are three-terminal surface mount configurations suitable for automated assembly.

Q: Are all listed substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance status.

Q: Which substitute parts carry automotive grade qualification?

A: The 2PB710ASL,235 and MMBTA55-7-F carry automotive grade qualification with AEC-Q101 certification, matching the primary part specification.

Q: Can the 50A02CH-TL-E be used in low-frequency applications?

A: Yes. The 50A02CH-TL-E supports 500 mA collector current and 50 V breakdown voltage, making it suitable for low-frequency applications. The higher transition frequency (690 MHz) does not restrict operation at lower frequencies.

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