2PB710ARL,235 PNP Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The 2PB710ARL,235 is an active-status PNP bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the TO-236AB package. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 250 mW power dissipation. The device is qualified to AEC-Q101 automotive standards and carries ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter ranges.

Substiute Parts

2PB710ARL,235
Nexperia USA Inc.In Stock: 60302PB710ARL,235 Datasheet
2PB710ARL,235
Current Part
2PB710ARL,215
Nexperia USA Inc.In Stock: 71272PB710ARL,215 Datasheet
2PB710ARL,215
Parametric Equivalent
2SA1313-Y,LF
Toshiba Semiconductor and StorageIn Stock: 42762SA1313-Y,LF Datasheet
2SA1313-Y,LF
Similar
BC807-16 RFG
Taiwan Semiconductor CorporationIn Stock: 12854BC807-16 RFG Datasheet
BC807-16 RFG
Similar
BC807-16LT1G
onsemiIn Stock: 146964BC807-16LT1G Datasheet
BC807-16LT1G
Similar
BC807-25 RFG
Taiwan Semiconductor CorporationIn Stock: 6653BC807-25 RFG Datasheet
BC807-25 RFG
Similar
BC807-40 RFG
Taiwan Semiconductor CorporationIn Stock: 7057BC807-40 RFG Datasheet
BC807-40 RFG
Similar
BC807-40-TP
Micro Commercial CoIn Stock: 1481BC807-40-TP Datasheet
BC807-40-TP
Similar
BCX17LT1G
onsemiIn Stock: 293114BCX17LT1G Datasheet
BCX17LT1G
Similar
MMBTA55-7-F
Diodes IncorporatedIn Stock: 23509MMBTA55-7-F Datasheet
MMBTA55-7-F
Similar
NSVBCX17LT1G
onsemiIn Stock: 1429NSVBCX17LT1G Datasheet
NSVBCX17LT1G
Similar
SBC807-16LT1G
onsemiIn Stock: 26223SBC807-16LT1G Datasheet
SBC807-16LT1G
Similar
SBC807-25LT1G
onsemiIn Stock: 363400SBC807-25LT1G Datasheet
SBC807-25LT1G
Similar
SBC807-25LT3G
onsemiIn Stock: 6928SBC807-25LT3G Datasheet
SBC807-25LT3G
Similar
SBC807-40LT1G
onsemiIn Stock: 35334SBC807-40LT1G Datasheet
SBC807-40LT1G
Similar
SBC807-40LT3G
onsemiIn Stock: 4984SBC807-40LT3G Datasheet
SBC807-40LT3G
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Ic) Maximum 500 mA
Collector-Emitter Breakdown Voltage (Max) 50 V
Vce Saturation (Max) 600 mV @ 30 mA, 300 mA
DC Current Gain (hFE) Minimum 120 @ 150 mA, 10 V
Power Dissipation Maximum 250 mW
Transition Frequency 120 MHz
Operating Temperature Maximum 150 °C
Package Type TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 2PB710ARL,235 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent: Parts that match all critical electrical specifications and package requirements without deviation. These parts are direct functional replacements with identical performance envelopes.

Similar Parts: Components that operate within the same application space but with variations in one or more parameters. Substitution is valid when the application requirements permit deviations in collector-emitter breakdown voltage, power dissipation, transition frequency, or DC current gain, provided the part remains within acceptable operating margins.

Key Parameters Determining Substitution Validity:

  • Collector current rating (500 mA minimum required)
  • Collector-emitter breakdown voltage (minimum 45 V acceptable; 50 V or higher preferred)
  • Package compatibility (TO-236-3, SC-59, SOT-23-3 required)
  • Mounting type (Surface Mount required)
  • Transistor polarity (PNP required)
  • RoHS compliance status
  • Operating temperature range (-55°C to 150°C acceptable)

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce Breakdown (Max) V Power (Max) mW Frequency MHz hFE (Min) Package Grade AEC-Q101
2PB710ARL,235 Nexperia USA Inc. 500 50 250 120 120 TO-236AB Automotive Yes
2PB710ARL,215 Nexperia USA Inc. 500 50 250 120 120 TO-236AB Automotive Yes
2SA1313-Y,LF Toshiba Semiconductor and Storage 500 50 200 200 120 S-Mini
BC807-16 RFG Taiwan Semiconductor Corporation 500 45 300 100 100 SOT-23
BC807-16LT1G onsemi 500 45 300 100 100 SOT-23-3
BC807-25 RFG Taiwan Semiconductor Corporation 500 45 300 100 160 SOT-23
BC807-40 RFG Taiwan Semiconductor Corporation 500 45 300 100 250 SOT-23
BC807-40-TP Micro Commercial Co 500 45 300 100 250 SOT-23
BCX17LT1G onsemi 500 45 300 100 SOT-23-3
MMBTA55-7-F Diodes Incorporated 500 60 300 50 100 SOT-23-3 Automotive Yes
NSVBCX17LT1G onsemi 500 45 225 100 SOT-23-3 Automotive Yes

Engineering Selection Recommendations

Parametric Equivalent Selection: The 2PB710ARL,215 is a parametric equivalent to the 2PB710ARL,235, differing only in tape reel configuration (215 versus 235 designation). Both parts are manufactured by Nexperia USA Inc., carry identical electrical specifications, maintain AEC-Q101 qualification, and are ROHS3 compliant. This part is suitable for direct substitution without circuit redesign.

Automotive-Grade Alternatives: The MMBTA55-7-F (Diodes Incorporated) and NSVBCX17LT1G (onsemi) are automotive-qualified alternatives with AEC-Q101 certification. The MMBTA55-7-F provides higher collector-emitter breakdown voltage (60 V versus 50 V) and increased power dissipation capability (300 mW versus 250 mW), making it suitable for applications requiring enhanced voltage margin. The NSVBCX17LT1G maintains the 45 V breakdown voltage with reduced power dissipation (225 mW), appropriate for lower-power circuit implementations.

General-Purpose Alternatives: The BC807 series (BC807-16LT1G, BC807-25 RFG, BC807-40 RFG, BC807-40-TP) and BCX17LT1G offer 500 mA collector current with 45 V breakdown voltage and 300 mW power dissipation. These parts are not automotive-qualified but provide functional equivalence for non-automotive applications. The BC807 variants differ in DC current gain (hFE) specifications: BC807-16 at 100, BC807-25 at 160, and BC807-40 at 250. Selection depends on circuit gain requirements.

Toshiba Alternative: The 2SA1313-Y,LF provides 50 V breakdown voltage matching the primary part, with enhanced transition frequency (200 MHz versus 120 MHz). Power dissipation is reduced to 200 mW. This part is suitable when higher-frequency performance is required within the same voltage envelope.

Frequently Asked Questions (FAQ)

Q: Can the 2PB710ARL,215 be used as a direct replacement for the 2PB710ARL,235?

A: Yes. Both parts are manufactured by Nexperia USA Inc. with identical electrical specifications, package type (TO-236AB), and automotive qualifications. The numerical suffix difference (215 versus 235) indicates tape reel configuration only and does not affect functional performance.

Q: What is the primary difference between the 2PB710ARL,235 and the BC807-16LT1G?

A: The 2PB710ARL,235 operates at 50 V collector-emitter breakdown voltage with 250 mW power dissipation and 120 MHz transition frequency. The BC807-16LT1G operates at 45 V breakdown voltage with 300 mW power dissipation and 100 MHz transition frequency. The BC807-16LT1G is suitable for applications where the lower voltage rating is acceptable and higher power dissipation capability is beneficial. The 2PB710ARL,235 is automotive-qualified; the BC807-16LT1G is not.

Q: Are all substitute parts compatible with the same PCB footprint?

A: All listed substitute parts use the TO-236-3, SC-59, or SOT-23-3 package designation, which share identical physical dimensions and pin configurations. PCB footprints are interchangeable across all parts listed.

Q: Which substitute part should be selected for automotive applications?

A: For automotive applications, select from parts carrying AEC-Q101 qualification: 2PB710ARL,215, MMBTA55-7-F, or NSVBCX17LT1G. The 2PB710ARL,215 is the parametric equivalent. The MMBTA55-7-F provides higher voltage margin (60 V). The NSVBCX17LT1G is suitable for lower-power implementations (225 mW).

Q: What is the significance of the DC current gain (hFE) variations among BC807 variants?

A: The BC807 series offers three hFE grades: BC807-16 (hFE 100), BC807-25 (hFE 160), and BC807-40 (hFE 250). Higher hFE values reduce base current requirements for a given collector current, affecting circuit biasing and power consumption. Selection depends on the specific circuit design and biasing network requirements.

Q: Can the 2SA1313-Y,LF be used in place of the 2PB710ARL,235?

A: The 2SA1313-Y,LF is functionally compatible, offering 50 V breakdown voltage, 500 mA collector current, and enhanced transition frequency (200 MHz). Power dissipation is reduced to 200 mW. The primary difference is the S-Mini package designation versus TO-236AB, though both are physically equivalent. This part is suitable when higher-frequency performance is required.

Q: What is the impact of selecting a part with lower power dissipation rating?

A: Parts with lower power dissipation ratings (such as NSVBCX17LT1G at 225 mW versus 2PB710ARL,235 at 250 mW) require more careful thermal management in high-power applications. Verify that circuit operating conditions do not exceed the selected part's power dissipation limit. For low-power applications, reduced power ratings are acceptable and may offer cost benefits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All parts listed carry ROHS3 compliance status, meeting environmental and material restriction requirements for electronic component manufacturing and assembly.

Request Quote (Ships tomorrow)