Equivalent & Substitute Parts for 2PB710AR,115 PNP Bipolar Junction Transistor

Part Overview

The 2PB710AR,115 is a PNP bipolar junction transistor manufactured by NXP USA Inc., designed for surface mount applications in the SOT-23-3 (TO-236) package. This device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 250 mW power dissipation. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, frequency response, and thermal characteristics while accommodating packaging and availability constraints.

Substiute Parts

2PB710AR,115
NXP USA Inc.In Stock: 9812PB710AR,115 Datasheet
2PB710AR,115
Current Part
2SA1313-Y,LF
Toshiba Semiconductor and StorageIn Stock: 42762SA1313-Y,LF Datasheet
2SA1313-Y,LF
MFR Recommended
2SA812-M6-TP
Micro Commercial CoIn Stock: 7772SA812-M6-TP Datasheet
2SA812-M6-TP
MFR Recommended
2SA812-M7-TP
Micro Commercial CoIn Stock: 10322SA812-M7-TP Datasheet
2SA812-M7-TP
MFR Recommended
BC807-16LT1G
onsemiIn Stock: 146964BC807-16LT1G Datasheet
BC807-16LT1G
MFR Recommended
BC807-25-TP
Micro Commercial CoIn Stock: 28052BC807-25-TP Datasheet
BC807-25-TP
MFR Recommended
BC807-40 RFG
Taiwan Semiconductor CorporationIn Stock: 7057BC807-40 RFG Datasheet
BC807-40 RFG
MFR Recommended
NSVBCX17LT1G
onsemiIn Stock: 1429NSVBCX17LT1G Datasheet
NSVBCX17LT1G
MFR Recommended
SBC807-40LT3G
onsemiIn Stock: 4984SBC807-40LT3G Datasheet
SBC807-40LT3G
MFR Recommended
2PB710ARL,215
Nexperia USA Inc.In Stock: 71272PB710ARL,215 Datasheet
2PB710ARL,215
Parametric Equivalent
2PB710ARL,235
Nexperia USA Inc.In Stock: 60302PB710ARL,235 Datasheet
2PB710ARL,235
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 250 mW
Frequency - Transition 120 MHz
Vce Saturation (Max) @ Ib, Ic 600 mV @ 30 mA, 300 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150 mA, 10 V
Current - Collector Cutoff (Max) 10 nA
Operating Temperature (TJ) 150 °C
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2PB710AR,115 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type must be PNP
  • Collector-emitter breakdown voltage must be ≥ 50 V
  • Maximum collector current must be ≥ 500 mA
  • Maximum power dissipation must be ≥ 250 mW
  • Package must be TO-236-3, SC-59, or SOT-23-3 (surface mount)
  • Operating temperature range must support 150°C junction temperature
  • RoHS3 compliance required

Secondary Compatibility Parameters:

  • Vce saturation characteristics
  • DC current gain (hFE) specifications
  • Transition frequency performance
  • Collector cutoff current (ICBO)

Substitute parts are categorized into two groups:

Group 1: Parametric Equivalents — Parts with identical or superior electrical specifications and the same base product lineage (2PB710 series). These provide direct functional replacement with enhanced or equivalent performance.

Group 2: Functional Substitutes — Parts meeting all critical electrical requirements but with different manufacturer origins or slightly modified specifications. These accommodate supply chain flexibility while maintaining circuit performance.

Parameter Comparison

Parameter 2PB710AR,115 2PB710ARL,215 2PB710ARL,235 SBC807-40LT3G BC807-16LT1G BC807-25-TP BC807-40 RFG NSVBCX17LT1G 2SA1313-Y,LF
Transistor Type PNP PNP PNP PNP PNP PNP PNP PNP PNP
Vce Breakdown (V) 50 50 50 45 45 45 45 45 50
Ic Max (mA) 500 500 500 500 500 500 500 500 500
Power Max (mW) 250 250 250 300 300 300 300 225 200
Frequency - Transition (MHz) 120 120 120 100 100 100 100 200
Vce Sat @ Ib, Ic (mV) 600 @ 30, 300 600 @ 30, 300 600 @ 30, 300 700 @ 50, 500 700 @ 50, 500 700 @ 50, 500 700 @ 50, 500 620 @ 50, 500 250 @ 10, 100
hFE Min @ Ic, Vce 120 @ 150, 10V 120 @ 150, 10V 120 @ 150, 10V 250 @ 100, 1V 100 @ 100, 1V 160 @ 100, 1V 250 @ 100, 1V 100 @ 100, 1V 120 @ 100, 1V
ICBO Max (nA) 10 10 10 100 100 200 200 100 100
Operating Temp (°C) 150 150 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 150
Package SOT-23-3 TO-236AB TO-236AB SOT-23-3 SOT-23-3 SOT-23 SOT-23 SOT-23-3 S-Mini
Product Status Obsolete Active Active Active Active Active Active Active Active
RoHS3 Compliant Yes Yes Yes Yes Yes Yes Yes Yes Yes
AEC-Q101 Qualified Yes Yes Yes Yes

Engineering Selection Recommendations

Parametric Equivalent Selection (Recommended for Direct Replacement):

The 2PB710ARL,215 and 2PB710ARL,235 are parametric equivalents manufactured by Nexperia USA Inc. Both parts maintain identical electrical specifications to the 2PB710AR,115, including 50 V breakdown voltage, 500 mA collector current, 120 MHz transition frequency, and 250 mW power rating. Both are AEC-Q101 qualified for automotive applications and carry active product status. The primary distinction is packaging designation (TO-236AB versus SMT3), which does not affect electrical performance. These parts provide the highest confidence for direct substitution in existing designs.

Functional Substitute Selection (For Supply Chain Flexibility):

When parametric equivalents are unavailable, the following active parts provide functional substitution:

SBC807-40LT3G (onsemi) — Meets all critical electrical requirements with 45 V breakdown voltage, 500 mA collector current, and 300 mW power dissipation. AEC-Q101 qualified for automotive applications. Transition frequency of 100 MHz is lower than the original 120 MHz but sufficient for most applications. Vce saturation is slightly higher (700 mV versus 600 mV), which may increase power dissipation in saturation-mode circuits.

BC807-16LT1G (onsemi) — Provides 45 V breakdown voltage, 500 mA collector current, and 300 mW power dissipation. Transition frequency of 100 MHz and hFE minimum of 100 @ 100 mA, 1 V. Not AEC-Q101 qualified. Suitable for non-automotive applications.

BC807-25-TP (Micro Commercial Co) — Offers 45 V breakdown voltage, 500 mA collector current, and 300 mW power dissipation. Higher hFE minimum (160 @ 100 mA, 1 V) compared to the original part. Transition frequency of 100 MHz. Not AEC-Q101 qualified.

BC807-40 RFG (Taiwan Semiconductor Corporation) — Delivers 45 V breakdown voltage, 500 mA collector current, and 300 mW power dissipation. Highest hFE minimum (250 @ 100 mA, 1 V) among BC807 variants. Transition frequency of 100 MHz. Not AEC-Q101 qualified.

NSVBCX17LT1G (onsemi) — Provides 45 V breakdown voltage, 500 mA collector current, and 225 mW power dissipation. AEC-Q101 qualified for automotive applications. Lower power rating (225 mW versus 250 mW) requires verification in high-dissipation circuits. Transition frequency not specified in datasheet.

2SA1313-Y,LF (Toshiba Semiconductor and Storage) — Meets 50 V breakdown voltage and 500 mA collector current specifications. Transition frequency of 200 MHz exceeds the original 120 MHz. Power dissipation of 200 mW is lower than the original 250 mW. Vce saturation of 250 mV @ 10 mA, 100 mA is significantly lower, indicating superior saturation performance. Active product status with unlimited MSL.

Voltage Derating Consideration:

Parts with 45 V breakdown voltage (BC807 series, NSVBCX17LT1G) operate 5 V below the original 50 V specification. In applications requiring the full 50 V margin, parametric equivalents (2PB710ARL,215 or 2PB710ARL,235) or 2SA1313-Y,LF must be selected.

Automotive Applications:

For AEC-Q101 qualified designs, select from: 2PB710ARL,215, 2PB710ARL,235, SBC807-40LT3G, or NSVBCX17LT1G.

Frequently Asked Questions (FAQ)

Q1: Can I use BC807-16LT1G as a direct replacement for 2PB710AR,115?

BC807-16LT1G meets the core electrical requirements: PNP type, 500 mA collector current, and SOT-23-3 package. However, the 45 V breakdown voltage is 5 V lower than the original 50 V specification. If your circuit operates below 45 V, this part is functionally compatible. If your design requires the full 50 V margin, use 2PB710ARL,215, 2PB710ARL,235, or 2SA1313-Y,LF instead.

Q2: What is the difference between 2PB710ARL,215 and 2PB710ARL,235?

Both parts are parametric equivalents with identical electrical specifications. The numerical suffix (215 versus 235) indicates different manufacturing date codes or tape reel configurations. Electrically, they are interchangeable. Both are AEC-Q101 qualified and carry active product status.

Q3: Why does 2SA1313-Y,LF have a higher transition frequency (200 MHz) than the original part (120 MHz)?

Transition frequency is a characteristic of the transistor design and manufacturing process. The 2SA1313-Y,LF achieves 200 MHz through optimized semiconductor geometry. This higher frequency does not create incompatibility; it indicates faster switching capability. In applications where the original 120 MHz is sufficient, the higher frequency of 2SA1313-Y,LF provides additional performance margin.

Q4: Is the lower power rating of 2SA1313-Y,LF (200 mW versus 250 mW) a limitation?

The 200 mW rating of 2SA1313-Y,LF is lower than the original 250 mW. Verify that your circuit's maximum power dissipation does not exceed 200 mW. If dissipation is marginal, select parts with higher power ratings: BC807-16LT1G, BC807-25-TP, BC807-40 RFG, or SBC807-40LT3G (all 300 mW).

Q5: Can I use NSVBCX17LT1G in automotive applications?

Yes. NSVBCX17LT1G is AEC-Q101 qualified and carries automotive-grade designation. However, its 225 mW power rating is lower than the original 250 mW. Confirm that your circuit's power dissipation remains below 225 mW.

Q6: What does "Parametric Equivalent" mean versus "Functional Substitute"?

Parametric equivalents maintain identical or superior electrical specifications and are typically from the same manufacturer family (e.g., 2PB710 series). Functional substitutes meet all critical requirements but may have different manufacturers, slightly modified specifications, or lower voltage ratings. Parametric equivalents provide the highest confidence for direct replacement; functional substitutes offer supply chain flexibility.

Q7: Are all substitute parts RoHS3 compliant?

Yes. All substitute parts listed in this document are RoHS3 compliant, matching the compliance status of the original 2PB710AR,115.

Q8: Which substitute part has the best saturation performance?

2SA1313-Y,LF exhibits the lowest Vce saturation (250 mV @ 10 mA, 100 mA), indicating superior saturation performance and lower power dissipation in saturation-mode circuits. This characteristic makes it advantageous for switching applications where saturation voltage directly impacts efficiency.

Q9: Can I use BC807-40 RFG if my circuit requires high current gain?

Yes. BC807-40 RFG has the highest hFE minimum (250 @ 100 mA, 1 V) among all listed substitutes. If your design benefits from higher current gain, this part provides superior performance. However, verify that the 45 V breakdown voltage is acceptable for your application.

Q10: What packaging options are available among substitute parts?

Most substitutes use SOT-23-3 or SOT-23 packages, which are mechanically compatible with the original TO-236-3 footprint. 2SA1313-Y,LF uses S-Mini packaging, which has a different footprint and requires PCB layout modification. Verify package compatibility before selection.

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