Equivalent & Substitute Parts for 2PB709AS,115 PNP Bipolar Transistor

Part Overview

The 2PB709AS,115 is a PNP bipolar junction transistor manufactured by NXP USA Inc., rated for 45V collector-emitter breakdown voltage and 100mA maximum collector current. This component is classified as obsolete, necessitating identification of active substitute parts that maintain electrical and mechanical compatibility for new designs or production continuity.

The part is packaged in TO-236-3 (SOT-23-3) surface mount configuration with 250mW power dissipation capability and 80MHz transition frequency. Substitution is required due to obsolete product status while maintaining functional equivalence in circuit applications.

Substiute Parts

2PB709AS,115
NXP USA Inc.In Stock: 61802PB709AS,115 Datasheet
2PB709AS,115
Current Part
BC807-16-7-F
Diodes IncorporatedIn Stock: 15720BC807-16-7-F Datasheet
BC807-16-7-F
MFR Recommended
BC807-16LT1G
onsemiIn Stock: 146964BC807-16LT1G Datasheet
BC807-16LT1G
MFR Recommended
BC807-16LT3G
onsemiIn Stock: 30502BC807-16LT3G Datasheet
BC807-16LT3G
MFR Recommended
BC807-25-TP
Micro Commercial CoIn Stock: 28052BC807-25-TP Datasheet
BC807-25-TP
MFR Recommended
BC807-25LT1G
onsemiIn Stock: 293480BC807-25LT1G Datasheet
BC807-25LT1G
MFR Recommended
BC807-25LT3G
onsemiIn Stock: 305350BC807-25LT3G Datasheet
BC807-25LT3G
MFR Recommended
BC807-40-7-F
Diodes IncorporatedIn Stock: 17132BC807-40-7-F Datasheet
BC807-40-7-F
MFR Recommended
BC807-40-TP
Micro Commercial CoIn Stock: 1481BC807-40-TP Datasheet
BC807-40-TP
MFR Recommended
BC807-40LT1G
onsemiIn Stock: 119478BC807-40LT1G Datasheet
BC807-40LT1G
MFR Recommended
BC807-40LT3G
onsemiIn Stock: 95404BC807-40LT3G Datasheet
BC807-40LT3G
MFR Recommended
BC857ALT1G
onsemiIn Stock: 747791BC857ALT1G Datasheet
BC857ALT1G
MFR Recommended
BC857B-7-F
Diodes IncorporatedIn Stock: 80349BC857B-7-F Datasheet
BC857B-7-F
MFR Recommended
BC857B-TP
Micro Commercial CoIn Stock: 12996BC857B-TP Datasheet
BC857B-TP
MFR Recommended
BC857BE6327HTSA1
Infineon TechnologiesIn Stock: 3446BC857BE6327HTSA1 Datasheet
BC857BE6327HTSA1
MFR Recommended
BC857BLT1G
onsemiIn Stock: 125142BC857BLT1G Datasheet
BC857BLT1G
MFR Recommended
BC857C-7-F
Diodes IncorporatedIn Stock: 155250BC857C-7-F Datasheet
BC857C-7-F
MFR Recommended
BC857CE6327HTSA1
Infineon TechnologiesIn Stock: 6459BC857CE6327HTSA1 Datasheet
BC857CE6327HTSA1
MFR Recommended
BC857CLT1G
onsemiIn Stock: 3653BC857CLT1G Datasheet
BC857CLT1G
MFR Recommended
BCW68GLT1G
onsemiIn Stock: 227136BCW68GLT1G Datasheet
BCW68GLT1G
MFR Recommended
BCW68HTA
Diodes IncorporatedIn Stock: 2029BCW68HTA Datasheet
BCW68HTA
MFR Recommended
BCW70LT1G
onsemiIn Stock: 4037BCW70LT1G Datasheet
BCW70LT1G
MFR Recommended
BCX17LT1G
onsemiIn Stock: 293114BCX17LT1G Datasheet
BCX17LT1G
MFR Recommended
BCX71JE6327HTSA1
Infineon TechnologiesIn Stock: 45857BCX71JE6327HTSA1 Datasheet
BCX71JE6327HTSA1
MFR Recommended
BCX71KE6327HTSA1
Infineon TechnologiesIn Stock: 1110BCX71KE6327HTSA1 Datasheet
BCX71KE6327HTSA1
MFR Recommended
FMMT720TA
Diodes IncorporatedIn Stock: 105314FMMT720TA Datasheet
FMMT720TA
MFR Recommended
MMBT3906-TP
Micro Commercial CoIn Stock: 464274MMBT3906-TP Datasheet
MMBT3906-TP
MFR Recommended
MMBT3906LT1G
onsemiIn Stock: 608945MMBT3906LT1G Datasheet
MMBT3906LT1G
MFR Recommended
MMBT3906LT3G
onsemiIn Stock: 1194MMBT3906LT3G Datasheet
MMBT3906LT3G
MFR Recommended
MMBT4403-7-F
Diodes IncorporatedIn Stock: 17425MMBT4403-7-F Datasheet
MMBT4403-7-F
MFR Recommended
MMBT4403-TP
Micro Commercial CoIn Stock: 1793MMBT4403-TP Datasheet
MMBT4403-TP
MFR Recommended
MMBT4403LT1G
onsemiIn Stock: 824352MMBT4403LT1G Datasheet
MMBT4403LT1G
MFR Recommended
MMBT4403LT3G
onsemiIn Stock: 46972MMBT4403LT3G Datasheet
MMBT4403LT3G
MFR Recommended
MSA1162GT1G
onsemiIn Stock: 155206MSA1162GT1G Datasheet
MSA1162GT1G
MFR Recommended
NSVBC857BLT3G
onsemiIn Stock: 1420NSVBC857BLT3G Datasheet
NSVBC857BLT3G
MFR Recommended
SBC857BLT1G
onsemiIn Stock: 36337SBC857BLT1G Datasheet
SBC857BLT1G
MFR Recommended
SBC857CLT1G
onsemiIn Stock: 1253SBC857CLT1G Datasheet
SBC857CLT1G
MFR Recommended
SMBT3906E6327HTSA1
Infineon TechnologiesIn Stock: 35044SMBT3906E6327HTSA1 Datasheet
SMBT3906E6327HTSA1
MFR Recommended
2PB709ASL,215
Nexperia USA Inc.In Stock: 41432PB709ASL,215 Datasheet
2PB709ASL,215
Parametric Equivalent
2PB709ASL,235
Nexperia USA Inc.In Stock: 10102PB709ASL,235 Datasheet
2PB709ASL,235
Parametric Equivalent
2PB709ASL-QR
Nexperia USA Inc.In Stock: 8712PB709ASL-QR Datasheet
2PB709ASL-QR
Parametric Equivalent
2PB709ASL-QVL
Nexperia USA Inc.In Stock: 108722PB709ASL-QVL Datasheet
2PB709ASL-QVL
Parametric Equivalent

Key Parameters

Parameter 2PB709AS,115 Unit
Transistor Type PNP
Collector-Emitter Breakdown Voltage (Max) 45 V
Collector Current (Max) 100 mA
Power Dissipation (Max) 250 mW
Transition Frequency 80 MHz
Vce Saturation (Max) 500 mV @ 10mA, 100mA
DC Current Gain (hFE Min) 290 @ 2mA, 10V
Package Type TO-236-3, SOT-23-3
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 2PB709AS,115 are selected based on the following critical parameters that determine functional equivalence:

Mandatory Matching Criteria:

  • Transistor Type: PNP
  • Collector-Emitter Breakdown Voltage: 45V (minimum requirement)
  • Package Type: TO-236-3 / SOT-23-3 (mechanical compatibility)
  • Mounting Type: Surface Mount
  • RoHS Compliance: ROHS3 Compliant

Allowable Parameter Variations:

  • Collector Current (Max): Substitute parts rated at 500mA exceed the 100mA requirement of the original part, providing enhanced current handling capability while remaining backward compatible
  • Power Dissipation: Substitute parts rated at 300-310mW exceed the 250mW specification, allowing operation within original design margins
  • Transition Frequency: Substitute parts rated at 100MHz exceed the 80MHz specification, maintaining or improving high-frequency performance
  • DC Current Gain (hFE): Substitute parts specify hFE values between 100-250 at different measurement conditions, all within acceptable ranges for PNP switching applications
  • Operating Temperature Range: Substitute parts extend to -55°C to 150°C, encompassing the original 150°C maximum

All substitute parts listed are active products with current manufacturing status and full inventory availability.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Power mW fT MHz hFE (Min) Package Status
2PB709AS,115 NXP USA Inc. 100 45 250 80 290 SOT-23-3 Obsolete
BC807-16-7-F Diodes Incorporated 500 45 310 100 100 SOT-23-3 Active
BC807-16LT1G onsemi 500 45 300 100 100 SOT-23-3 Active
BC807-16LT3G onsemi 500 45 300 100 100 SOT-23-3 Active
BC807-25-TP Micro Commercial Co 500 45 300 100 160 SOT-23-3 Active
BC807-25LT1G onsemi 500 45 300 100 160 SOT-23-3 Active
BC807-25LT3G onsemi 500 45 300 100 160 SOT-23-3 Active
BC807-40-7-F Diodes Incorporated 500 45 310 100 250 SOT-23-3 Active
BC807-40-TP Micro Commercial Co 500 45 300 100 250 SOT-23-3 Active
BC807-40LT1G onsemi 500 45 300 100 250 SOT-23-3 Active
BC807-40LT3G onsemi 500 45 300 100 250 SOT-23-3 Active

Engineering Selection Recommendations

All listed substitute parts meet the mandatory electrical and mechanical compatibility requirements for the 2PB709AS,115. Selection among available options is determined by the following factors:

Product Status and Availability: All substitute parts carry Active product status with current manufacturing support. Inventory levels range from 1,430 to 305,300 units across multiple manufacturers and packaging options, ensuring supply chain continuity.

Compliance and Certifications: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the regulatory posture of the original component. Moisture sensitivity level remains at MSL 1 (Unlimited) across all options.

Manufacturer Options: Three manufacturers provide BC807 variants: onsemi (highest inventory depth with 119,400-305,300 units), Diodes Incorporated (15,635-17,100 units), and Micro Commercial Co (1,430-28,010 units). Selection may be based on existing supply chain relationships or preferred vendor agreements.

Packaging and Delivery Format: Substitute parts are available in Cut Tape (CT) & Digi-Reel, Tape & Reel (TR), and alternative packaging formats. Selection depends on production volume requirements and assembly line compatibility.

DC Current Gain Variants: BC807-16 variants (hFE Min 100) provide the lowest gain specification. BC807-25 variants (hFE Min 160) offer intermediate gain. BC807-40 variants (hFE Min 250) provide gain closest to the original 2PB709AS,115 specification (hFE Min 290). Selection should align with circuit bias network design and gain requirements.

Frequently Asked Questions (FAQ)

Q: Can BC807 series transistors directly replace the 2PB709AS,115 in existing designs?

A: Yes. All BC807 variants listed maintain identical collector-emitter breakdown voltage (45V), package type (SOT-23-3), and mounting configuration (surface mount). The enhanced current rating (500mA vs. 100mA) and power dissipation (300-310mW vs. 250mW) provide design margin without requiring circuit modification.

Q: What is the significance of the BC807 suffix numbers (16, 25, 40)?

A: The suffix indicates the DC current gain (hFE) classification. BC807-16 specifies hFE minimum of 100, BC807-25 specifies hFE minimum of 160, and BC807-40 specifies hFE minimum of 250. Selection depends on the bias network design and required gain characteristics. BC807-40 variants most closely match the original 2PB709AS,115 hFE specification of 290.

Q: Are there differences between onsemi, Diodes Incorporated, and Micro Commercial Co versions?

A: All three manufacturers provide functionally equivalent BC807 transistors meeting the same electrical specifications. Differences exist in packaging format (Cut Tape, Tape & Reel, or alternative), inventory availability, and supplier device package designation. Electrical performance and pin configuration are identical.

Q: What is the difference between SOT-23-3 and TO-236-3 package designations?

A: SOT-23-3 and TO-236-3 are equivalent package designations for the same three-lead surface mount package. Both refer to the same physical form factor, pin spacing, and land pattern. The terms are used interchangeably in industry documentation.

Q: Can I use BC807-16 if my circuit requires higher gain?

A: BC807-16 with hFE minimum of 100 provides lower gain than the original 2PB709AS,115 (hFE minimum 290). Circuit compatibility depends on the specific bias network design. If the circuit requires minimum gain of 290, BC807-40 variants are the appropriate selection. If the circuit can operate with lower gain, BC807-16 remains compatible.

Q: What is the operating temperature range for substitute parts?

A: All BC807 substitute parts operate from -55°C to 150°C junction temperature, which encompasses the original 2PB709AS,115 maximum operating temperature of 150°C. This extended lower temperature range provides additional design margin for industrial and automotive applications.

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed BC807 substitute parts maintain ROHS3 compliance status, matching the original 2PB709AS,115 specification. All parts are REACH unaffected and carry EAR99 export classification.

Q: What is the transition frequency difference between the original and substitute parts?

A: The 2PB709AS,115 specifies 80MHz transition frequency, while all BC807 substitutes specify 100MHz. The higher transition frequency of substitute parts provides improved high-frequency performance and does not restrict circuit applications designed for the original 80MHz specification.

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