2N918 PBFREE RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The 2N918 PBFREE is an RF transistor NPN manufactured by Central Semiconductor Corp, designed for RF applications requiring operation at 15V collector-emitter breakdown voltage and 600MHz transition frequency. This through-hole TO-72 package device delivers 200mW maximum power dissipation with 50mA maximum collector current, suitable for legacy RF circuit designs and applications requiring through-hole mounting.

The 2N918 PBFREE maintains active product status with 1800 units in current inventory. Equivalent and substitute parts are identified based on matching electrical performance parameters within the RF transistor NPN category, accounting for differences in mounting technology, package form factor, and frequency capability.

Substiute Parts

2N918 PBFREE
Central Semiconductor CorpIn Stock: 18392N918 PBFREE Datasheet
2N918 PBFREE
Current Part
2SC5488A-TL-H
onsemiIn Stock: 116162SC5488A-TL-H Datasheet
2SC5488A-TL-H
MFR Recommended
BFP405FH6327XTSA1
Infineon TechnologiesIn Stock: 3962BFP405FH6327XTSA1 Datasheet
BFP405FH6327XTSA1
MFR Recommended
BFP620H7764XTSA1
Infineon TechnologiesIn Stock: 14017BFP620H7764XTSA1 Datasheet
BFP620H7764XTSA1
MFR Recommended
BFP720ESDH6327XTSA1
Infineon TechnologiesIn Stock: 4304BFP720ESDH6327XTSA1 Datasheet
BFP720ESDH6327XTSA1
MFR Recommended
BFP842ESDH6327XTSA1
Infineon TechnologiesIn Stock: 9624BFP842ESDH6327XTSA1 Datasheet
BFP842ESDH6327XTSA1
MFR Recommended
BFQ790H6327XTSA1
Infineon TechnologiesIn Stock: 2425BFQ790H6327XTSA1 Datasheet
BFQ790H6327XTSA1
MFR Recommended
BFR93AWH6327XTSA1
Infineon TechnologiesIn Stock: 35409BFR93AWH6327XTSA1 Datasheet
BFR93AWH6327XTSA1
MFR Recommended
MMBT5179
onsemiIn Stock: 2460MMBT5179 Datasheet
MMBT5179
MFR Recommended
MRF10031
MACOM Technology SolutionsIn Stock: 1490MRF10031 Datasheet
MRF10031
MFR Recommended
MRF422
MACOM Technology SolutionsIn Stock: 1125MRF422 Datasheet
MRF422
MFR Recommended
NSVMMBTH10LT1G
onsemiIn Stock: 30250NSVMMBTH10LT1G Datasheet
NSVMMBTH10LT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15 V
Frequency - Transition 600 MHz
Power - Max 200 mW
Current - Collector (Ic) (Max) 50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3mA, 1V
Noise Figure (dB Typ @ f) 6 dB @ 60kHz
Mounting Type Through Hole
Package / Case TO-206AF, TO-72-4 Metal Can
Operating Temperature -65 to 200 °C (TJ)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 2N918 PBFREE are grouped based on the following substitution criteria:

Primary Substitution Parameters:

  • Transistor Type: NPN (mandatory match)
  • Voltage - Collector Emitter Breakdown (Max): ≥15V or lower voltage acceptable for specific applications
  • Frequency - Transition: ≥600MHz for RF performance maintenance
  • Power - Max: ≥200mW for thermal capability
  • Current - Collector (Ic) (Max): ≥50mA for current handling
  • DC Current Gain (hFE): Minimum 20 at specified conditions

Secondary Considerations:

  • Mounting Type: Through-hole preferred; surface-mount alternatives available for redesigned circuits
  • Package compatibility: TO-72 through-hole is primary; SOT-343, SOT-323, SOT-23-3 surface-mount packages represent modern alternatives
  • Operating Temperature Range: Minimum -55°C to 150°C acceptable; 200°C maximum preferred for high-reliability applications
  • RoHS3 Compliance: All substitute parts maintain ROHS3 compliance

Substitutes are organized into two categories: direct through-hole equivalents and surface-mount alternatives with enhanced RF performance characteristics.

Parameter Comparison

Part Number Manufacturer Vce (Max) [V] Frequency [MHz/GHz] Power (Max) [mW] Ic (Max) [mA] hFE (Min) Mounting Type Package Status
2N918 PBFREE Central Semiconductor Corp 15 600 MHz 200 50 20 Through Hole TO-72 Active
2SC5488A-TL-H onsemi 10 7 GHz 100 70 90 Surface Mount 3-SSFP Active
BFP405FH6327XTSA1 Infineon Technologies 4.5 25 GHz 75 25 60 Surface Mount 4-TSFP Active
BFP620H7764XTSA1 Infineon Technologies 2.8 65 GHz 185 80 110 Surface Mount SOT-343 Active
BFP720ESDH6327XTSA1 Infineon Technologies 4.7 43 GHz 100 30 160 Surface Mount SOT-343 Active
BFP842ESDH6327XTSA1 Infineon Technologies 3.7 60 GHz 120 40 150 Surface Mount SOT-343 Active
BFQ790H6327XTSA1 Infineon Technologies 6.1 1.85 GHz 1500 300 60 Surface Mount SOT-89 Obsolete
BFR93AWH6327XTSA1 Infineon Technologies 12 6 GHz 300 90 70 Surface Mount SOT-323 Active
MMBT5179 onsemi 12 2 GHz 225 50 25 Surface Mount SOT-23-3 Active
MRF10031 MACOM Technology Solutions 55 30000 3000 20 Chassis Mount 332A-03 Active
MRF422 MACOM Technology Solutions 35 150000 20000 15 Chassis Mount 211-11 Active

Engineering Selection Recommendations

For Direct Through-Hole Replacement: No direct through-hole equivalent with identical TO-72 package is provided in the substitute list. The 2N918 PBFREE remains the specified component for through-hole applications requiring TO-72 form factor.

For Surface-Mount Circuit Redesign:

Low-Frequency RF Applications (600MHz to 2GHz):

  • MMBT5179 (onsemi): Matches 12V Vce rating, 50mA Ic maximum, and 2GHz frequency capability. SOT-23-3 package enables compact surface-mount implementation. Active product status with 2400 units in inventory. Suitable for legacy RF designs transitioning to surface-mount technology.
  • BFR93AWH6327XTSA1 (Infineon Technologies): Provides 12V Vce rating, 6GHz frequency capability, and 300mW power dissipation. SOT-323 package offers miniaturization. Active status with 35300 units in inventory.

Mid-Frequency RF Applications (6GHz to 25GHz):

  • 2SC5488A-TL-H (onsemi): Delivers 7GHz transition frequency with 70mA Ic capability and 100mW power. 3-SSFP package. Active status with 11541 units in inventory.
  • BFP405FH6327XTSA1 (Infineon Technologies): Supports 25GHz frequency with 75mW power and 25mA Ic. 4-TSFP package. Active status with 3855 units in inventory.

High-Frequency RF Applications (43GHz to 65GHz):

  • BFP720ESDH6327XTSA1 (Infineon Technologies): 43GHz transition frequency, 100mW power, SOT-343 package. Active status with 4220 units in inventory.
  • BFP842ESDH6327XTSA1 (Infineon Technologies): 60GHz transition frequency, 120mW power, SOT-343 package. Active status with 9551 units in inventory.
  • BFP620H7764XTSA1 (Infineon Technologies): 65GHz transition frequency, 185mW power, SOT-343 package. Active status with 14000 units in inventory.

High-Power RF Applications (>1W):

  • BFQ790H6327XTSA1 (Infineon Technologies): 1.5W power dissipation, 1.85GHz frequency, 300mA Ic. SOT-89 package. Obsolete status; use only if existing inventory is available.
  • MRF10031 (MACOM Technology Solutions): 30W power, 55V Vce, 3A Ic. Chassis mount 332A-03 package. Active status with 1405 units in inventory.
  • MRF422 (MACOM Technology Solutions): 150W power, 35V Vce, 20A Ic. Chassis mount 211-11 package. Active status with 1110 units in inventory.

Compliance and Certification: All active substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the 2N918 PBFREE regulatory requirements. Operating temperature ranges vary; verify -65°C to 200°C requirement compatibility with application environment.

Frequently Asked Questions (FAQ)

Q1: Can MMBT5179 directly replace 2N918 PBFREE in existing through-hole circuits?

A: No. MMBT5179 is a surface-mount SOT-23-3 package device, while 2N918 PBFREE uses through-hole TO-72 package. Circuit board redesign is required for MMBT5179 implementation. Electrical parameters are compatible: both support 12V Vce, 50mA Ic, and RF operation at 2GHz and 600MHz respectively.

Q2: What is the primary difference between 2N918 PBFREE and BFR93AWH6327XTSA1?

A: Primary differences are mounting technology and frequency capability. 2N918 PBFREE is through-hole TO-72 rated to 600MHz; BFR93AWH6327XTSA1 is surface-mount SOT-323 rated to 6GHz. Both support 12V Vce operation. BFR93AWH6327XTSA1 provides higher frequency performance and compact package size for modern RF designs.

Q3: Are the high-power MRF10031 and MRF422 suitable for 600MHz RF applications?

A: MRF10031 and MRF422 are high-power, low-frequency RF transistors designed for power amplification applications exceeding 1W dissipation. Transition frequency data is not provided for these chassis-mount devices. They are not recommended for 600MHz RF signal applications; use for power amplification stages only.

Q4: Which substitute part offers the closest electrical match to 2N918 PBFREE?

A: MMBT5179 provides the closest electrical match: 12V Vce (vs. 15V), 50mA Ic (identical), 2GHz frequency (vs. 600MHz), and 225mW power (vs. 200mW). Primary limitation is surface-mount SOT-23-3 package versus through-hole TO-72. For through-hole applications, 2N918 PBFREE remains the specified component.

Q5: Can BFP620H7764XTSA1 operate at 15V collector-emitter voltage?

A: No. BFP620H7764XTSA1 has maximum Vce rating of 2.8V, significantly lower than 2N918 PBFREE at 15V. This device is designed for low-voltage, high-frequency (65GHz) applications. Exceeding 2.8V Vce will cause device failure.

Q6: What is the inventory status for through-hole TO-72 equivalents?

A: No through-hole TO-72 equivalent is listed in the substitute parts. 2N918 PBFREE maintains 1800 units in current inventory. For through-hole applications, 2N918 PBFREE is the specified component. Surface-mount alternatives require circuit redesign.

Q7: Are all substitute parts RoHS3 compliant?

A: Yes. All active substitute parts listed maintain ROHS3 compliance and REACH unaffected status, matching 2N918 PBFREE regulatory requirements. BFQ790H6327XTSA1, marked obsolete, also maintains ROHS3 compliance but should not be selected for new designs.

Q8: Which substitute part supports the widest operating temperature range?

A: 2N918 PBFREE supports -65°C to 200°C (TJ). MRF10031 supports operation to 200°C (TJ) maximum. Most surface-mount substitutes (BFP series, 2SC5488A-TL-H, MMBT5179) support -55°C to 150°C (TJ) or 150°C (TJ) maximum. Verify application temperature requirements before selection.

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