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2N7008 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The 2N7008 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 150mA continuous drain current in a TO-92-3 through-hole package. This device is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design and procurement requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating the through-hole TO-92-3 package form factor.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 60 | V |
| Current - Continuous Drain (Id) @ 25°C | 150 | mA |
| Power Dissipation (Max) | 400 | mW |
| Rds On (Max) @ Id, Vgs | 7.5 @ 50mA, 5V | Ohm |
| Input Capacitance (Ciss) (Max) @ Vds | 50 @ 25 V | pF |
| Operating Temperature | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-226-3, TO-92-3 | — |
Substitute Part Grouping Explanation
Substitution eligibility for the 2N7008 is determined by the following criteria:
Mandatory Compatibility Parameters:
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V minimum
- Mounting Type: Through Hole
- Package / Case: TO-92-3 or TO-226-3 compatible
Performance Parameters:
- Continuous Drain Current (Id): Equal to or greater than 150mA
- Power Dissipation (Max): Equal to or greater than 400mW
- Operating Temperature Range: -55°C to 150°C (TJ)
- Input Capacitance (Ciss): 50pF @ 25V
Substitute parts must satisfy all mandatory compatibility parameters. Performance parameters may exceed the 2N7008 specification without restriction, as higher ratings provide design margin and enhanced reliability.
Parameter Comparison
| Parameter | 2N7008 (onsemi) | 2N7000TA (onsemi) | 2N7008-G (Microchip) |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V | 60V | 60V |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) | 200mA (Tc) | 230mA (Tj) |
| Power Dissipation (Max) | 400mW (Ta) | 400mW (Ta) | 1W (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5Ω @ 50mA, 5V | 5Ω @ 500mA, 10V | 7.5Ω @ 500mA, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | 50pF @ 25V | 50pF @ 25V |
| Operating Temperature | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Product Status | Obsolete | Active | Active |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
2N7000TA (onsemi): This part is an active substitute manufactured by onsemi, the original manufacturer of the 2N7008. The 2N7000TA provides 200mA continuous drain current, exceeding the 2N7008 specification of 150mA. It maintains identical 60V Vdss rating, 400mW power dissipation, and TO-92-3 package compatibility. The 2N7000TA is ROHS3 compliant, addressing regulatory requirements that the obsolete 2N7008 does not meet. This part is recommended for applications requiring direct replacement with enhanced current capability and regulatory compliance.
2N7008-G (Microchip Technology): This part is an active substitute with enhanced specifications. The 2N7008-G provides 230mA continuous drain current and 1W power dissipation, both exceeding 2N7008 ratings. It maintains 60V Vdss and TO-92-3 package compatibility. The 2N7008-G is ROHS3 compliant and offers superior thermal performance. This part is recommended for applications where increased current handling and thermal margin are beneficial.
Both substitute parts satisfy all mandatory compatibility parameters and provide active product status with regulatory compliance. Selection between them depends on current and thermal requirements of the specific application.
Frequently Asked Questions (FAQ)
Q: Can the 2N7000TA directly replace the 2N7008 in existing designs?
A: Yes. The 2N7000TA maintains identical voltage rating (60V Vdss), exceeds current rating (200mA vs. 150mA), and uses the same TO-92-3 through-hole package. Pin configuration and electrical characteristics are compatible for direct substitution.
Q: What is the difference between the 2N7000TA and 2N7008-G?
A: Both are active substitutes with identical 60V Vdss and TO-92-3 packaging. The 2N7008-G provides higher continuous drain current (230mA vs. 200mA) and higher power dissipation (1W vs. 400mW). Selection depends on application thermal and current requirements.
Q: Why is the 2N7008 classified as obsolete?
A: The 2N7008 is no longer in active production. Active equivalents such as the 2N7000TA and 2N7008-G are available from the same or alternative manufacturers.
Q: Are the substitute parts RoHS compliant?
A: Yes. Both the 2N7000TA and 2N7008-G are ROHS3 compliant. The original 2N7008 is RoHS non-compliant.
Q: Do the substitute parts have the same package dimensions?
A: Yes. All three parts use the TO-92-3 (TO-226-3) through-hole package with identical pin configuration and physical dimensions.
Q: What is the impact of higher current ratings in substitute parts?
A: Higher current ratings (200mA or 230mA vs. 150mA) provide design margin and allow operation at higher current levels without exceeding device limits. This does not negatively affect applications designed for the original 150mA specification.
Q: Can I use the 2N7008-G in place of the 2N7000TA?
A: Yes. The 2N7008-G exceeds all electrical specifications of the 2N7000TA while maintaining package compatibility. It is suitable for any application requiring either part.
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