2N7002KA-TP N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7002KA-TP is an N-Channel 60V 340mA surface mount MOSFET manufactured by Micro Commercial Co in SOT-23 packaging. This device is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product line. Alternative equivalent parts are necessary for ongoing production support, design flexibility, and supply chain continuity. Substitute parts must maintain compatibility across drain-source voltage ratings, continuous drain current specifications, gate threshold voltage characteristics, and SOT-23 surface mount packaging.

Key Parameters

Parameter	2N7002KA-TP Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	340	mA
Rds On (Max) @ 500mA, 10V	5	Ohm
Vgs(th) (Max) @ 250µA	2.5	V
Power Dissipation (Max)	350	mW
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	SOT-23-3 (TO-236-3, SC-59)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the 2N7002KA-TP is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): Equal to or greater than 340mA
Gate Threshold Voltage (Vgs(th)): Within ±0.5V of 2.5V
Mounting Type: Surface Mount
Package: SOT-23-3 (TO-236-3, SC-59)
Operating Temperature Range: -55°C to 150°C minimum
RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Parameters:

Rds On (Max): Lower or equal values indicate improved performance
Power Dissipation: Equal to or greater than 350mW
Vgs (Max): ±20V or greater
Input Capacitance (Ciss): Variations acceptable within application context

Substitute parts are grouped into two categories based on drain current capability: Higher Current Capability (≥340mA) and Lower Current Capability (<340mA). Parts with lower current ratings are suitable only for applications where the actual operating current does not exceed the substitute part's specification.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On @ 10V (Ohm)	Vgs(th) @ 250µA (V)	Power Diss. (mW)	Temp Range (°C)	Product Status
2N7002KA-TP	Micro Commercial Co	60	340	5	2.5	350	-55 to 150	Not For New Designs
2N7002KT1G	onsemi	60	320	1.6	2.3	300	-55 to 150	Active
MMBF170LT1G	onsemi	60	500	5	3	225	-55 to 150	Active
2N7002ET1G	onsemi	60	260	2.5	2.5	300	-55 to 150	Active
T2N7002AK,LM	Toshiba Semiconductor and Storage	60	200	3.9	2.1	320	-55 to 150	Active
2N7002AQ-13	Diodes Incorporated	60	180	5	2	370	-55 to 150	Active
DMN67D8L-7	Diodes Incorporated	60	210	5	2.5	340	-55 to 150	Active
PMBF170,235	Nexperia USA Inc.	60	300	5	2	830	-65 to 150	Not For New Designs
VN10LFTA	Diodes Incorporated	60	150	5	2.5	330	-55 to 150	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

2N7002KT1G (onsemi) — Active product status. Continuous drain current of 320mA is within 94% of the 2N7002KA-TP specification. Superior Rds On performance (1.6 Ohm vs. 5 Ohm) provides lower on-state losses. Gate threshold voltage of 2.3V is within acceptable tolerance. ROHS3 compliant with MSL 1 rating. Suitable for applications where the 20mA current reduction is acceptable.

MMBF170LT1G (onsemi) — Active product status. Continuous drain current of 500mA exceeds the 2N7002KA-TP by 47%, providing design margin. Rds On matches the original specification at 5 Ohm. Gate threshold voltage of 3V is 0.5V higher; verify gate drive voltage compatibility. ROHS3 compliant with MSL 1 rating. Suitable for applications requiring higher current capability.

Secondary Substitutes (Application-Dependent):

2N7002ET1G (onsemi) — Active product status. Continuous drain current of 260mA is 76% of the original specification. Superior Rds On performance (2.5 Ohm) reduces power dissipation. Gate threshold voltage matches at 2.5V. ROHS3 compliant. Suitable only for applications where actual operating current does not exceed 260mA.

T2N7002AK,LM (Toshiba Semiconductor and Storage) — Active product status. Continuous drain current of 200mA is 59% of the original specification. Superior Rds On performance (3.9 Ohm) and lower input capacitance (17 pF). Gate threshold voltage of 2.1V is within tolerance. ROHS3 compliant. Suitable only for low-current applications.

DMN67D8L-7 (Diodes Incorporated) — Active product status. Continuous drain current of 210mA is 62% of the original specification. Rds On and power dissipation match the original closely. Gate threshold voltage of 2.5V matches exactly. ROHS3 compliant. Suitable for applications with reduced current requirements.

2N7002AQ-13 (Diodes Incorporated) — Active product status with AEC-Q101 automotive qualification. Continuous drain current of 180mA is 53% of the original specification. Rds On matches at 5 Ohm. Gate threshold voltage of 2V is within tolerance. ROHS3 compliant. Suitable for automotive-grade applications with lower current requirements.

VN10LFTA (Diodes Incorporated) — Active product status. Continuous drain current of 150mA is 44% of the original specification. Rds On matches at 5 Ohm. Gate threshold voltage of 2.5V matches exactly. ROHS3 compliant. Suitable only for low-current applications.

Legacy Alternatives (Not Recommended for New Designs):

PMBF170,235 (Nexperia USA Inc.) — Not For New Designs status. Continuous drain current of 300mA is 88% of the original specification. Significantly higher power dissipation (830mW vs. 350mW) indicates different thermal characteristics. Extended operating temperature range (-65°C to 150°C) provides additional margin. ROHS3 compliant. Use only for legacy system support.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with lower continuous drain current than the 2N7002KA-TP?

A: Substitution with lower current ratings is permissible only if the actual operating current in your application does not exceed the substitute part's specification. Verify the maximum drain current required by your circuit design before selecting a lower-rated alternative. Operating above the rated continuous drain current will result in device failure or reduced reliability.

Q: What is the significance of Rds On (on-state resistance) when selecting a substitute?

A: Rds On determines the voltage drop across the MOSFET when conducting current. Lower Rds On values reduce power dissipation and heat generation. Substitutes with lower Rds On (such as 2N7002KT1G at 1.6 Ohm) provide improved efficiency. Substitutes with equal or higher Rds On maintain thermal characteristics similar to the original part.

Q: Are all substitute parts compatible with the same PCB footprint?

A: All listed substitute parts use SOT-23-3 (TO-236-3, SC-59) packaging, which shares identical physical dimensions and pin configurations. PCB footprints are directly compatible without modification. Verify that your PCB design accommodates the SOT-23-3 package specification.

Q: What does "Not For New Designs" status mean for the 2N7002KA-TP?

A: This designation indicates that Micro Commercial Co has discontinued active development and marketing of this part. The manufacturer recommends using alternative products for new circuit designs. Existing inventory may remain available for legacy system support, but long-term supply cannot be guaranteed. Active-status substitutes provide assured future availability.

Q: How does gate threshold voltage (Vgs(th)) affect substitution compatibility?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn the MOSFET on. The 2N7002KA-TP specifies 2.5V at 250µA. Substitutes with Vgs(th) values between 2.0V and 3.0V are generally compatible with standard gate drive circuits. Verify that your gate drive voltage exceeds the substitute part's Vgs(th) specification by an adequate margin (typically 2V minimum) for reliable switching.

Q: Which substitute offers the best direct replacement for the 2N7002KA-TP?

A: The 2N7002KT1G (onsemi) provides the closest electrical match with 320mA continuous drain current (94% of original), matching gate threshold voltage of 2.3V, and active product status. Superior Rds On performance (1.6 Ohm vs. 5 Ohm) provides additional design margin. This part is recommended as the primary substitute for new designs requiring the 2N7002KA-TP functionality.

Q: Can I use MMBF170LT1G as a direct replacement?

A: The MMBF170LT1G is electrically compatible with higher current capability (500mA vs. 340mA), but the gate threshold voltage is 3V compared to 2.5V in the original part. Verify that your gate drive circuit provides sufficient voltage margin above 3V for reliable switching. The higher current rating provides design margin for applications where the original 340mA specification is marginal.

Q: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Cut Tape (CT) and Digi-Reel® packaging are supplied on continuous tape in smaller quantities suitable for manual assembly or small production runs. Tape & Reel (TR) packaging provides components on full reels for automated pick-and-place assembly in high-volume production. Both formats use identical SOT-23-3 component packages. Select packaging based on your assembly process and volume requirements.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the original 2N7002KA-TP specifications. This ensures compatibility with modern manufacturing processes and environmental regulations.

Q: Why does the 2N7002AQ-13 have AEC-Q101 automotive qualification?

A: AEC-Q101 qualification indicates that the 2N7002AQ-13 meets automotive industry reliability and quality standards established by the Automotive Electronics Council. This qualification is relevant only if your application requires automotive-grade components. Non-automotive applications do not require this certification.

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