2N7002K-7 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7002K-7 is an N-Channel enhancement-mode MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 380mA continuous drain current at 25°C. The device is packaged in SOT-23-3 (TO-236) surface mount configuration and is designed for general-purpose switching and amplification applications in consumer and industrial electronics. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters while maintaining compatible packaging and thermal characteristics. Substitution becomes necessary when the primary part experiences supply constraints, extended lead times, or when design requirements permit operation within the electrical specifications of alternative manufacturers' offerings.

Key Parameters

Parameter	2N7002K-7 (Diodes Inc.)	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	380	mA
On-Resistance (Rds On) @ 500mA, 10V	2	Ω
Gate Threshold Voltage (Vgs(th)) @ 1mA	2.5	V
Gate Charge (Qg) @ 4.5V	0.3	nC
Input Capacitance (Ciss) @ 25V	50	pF
Power Dissipation (Max)	370	mW
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution logic for the 2N7002K-7 is based on the following critical parameters that must be matched or exceeded:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 60V to ensure safe operation in circuits designed for the primary part.

Current Capability: Substitute parts must support continuous drain current at or above 380mA at 25°C. Parts with lower current ratings (115mA, 240mA, 260mA, 300mA) are classified as functional equivalents for applications where the full 380mA capability is not required.

On-Resistance (Rds On): The primary part specifies 2Ω maximum at 500mA and 10V gate-source voltage. Substitute parts with higher Rds On values (2.5Ω, 3Ω, 5Ω, 7.5Ω) remain functionally equivalent but exhibit increased power dissipation and heat generation.

Package Compatibility: All substitute parts use SOT-23-3 (TO-236, SC-59) surface mount packaging, ensuring mechanical and thermal interface compatibility with the original design.

Thermal Characteristics: Power dissipation ratings range from 200mW to 500mW. The primary part dissipates 370mW; substitutes with lower ratings require thermal management verification in high-current applications.

Gate Threshold Voltage: All parts maintain Vgs(th) at or below 2.5V, ensuring consistent gate drive requirements.

Temperature Range: The primary part operates from -55°C to 150°C. Substitute parts maintain this range or extend to 175°C, providing equivalent or superior thermal performance.

Compliance: All substitute parts are RoHS3 compliant with MSL 1 rating, matching the primary part's environmental and regulatory status.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On @ 10V (Ω)	Qg @ 4.5-5V (nC)	Ciss @ 25V (pF)	Power Diss. (mW)	Temp. Range (°C)	Package
2N7002K-7	Diodes Inc.	60	380	2	0.3	50	370	-55 to 150	SOT-23-3
2N7002	UMW	60	115	5	—	50	225	-55 to 150	SOT-23
2N7002-TP	Micro Commercial Co	60	115	7.5	—	50	200	-55 to 150	SOT-23
2N7002E-T1-E3	Vishay Siliconix	60	240	3	0.6	21	350	-55 to 150	SOT-23-3
2N7002ET1G	onsemi	60	260	2.5	0.81	26.7	300	-55 to 150	SOT-23-3
2N7002K	Good-Ark Semiconductor	60	300	0.3 @ 4.5V	0.4	30	430	-55 to 175	SOT-23
2N7002K-AU_R1_000A2	Panjit International Inc.	60	300	3	0.8	35	500	-55 to 150	SOT-23
2N7002K-T1-E3	Vishay Siliconix	60	300	2	0.6	30	350	-55 to 150	SOT-23-3
2N7002K-T1-GE3	Vishay Siliconix	60	300	2	0.6	30	350	-55 to 150	SOT-23-3
2N7002K_R1_00001	Panjit International Inc.	60	300	3	0.8	35	350	-55 to 150	SOT-23
2N7002KT1G	onsemi	60	320	1.6	0.7	24.5	300	-55 to 150	SOT-23-3

Engineering Selection Recommendations

Direct Equivalents (Recommended for 1:1 Replacement):

The 2N7002K-T1-E3, 2N7002K-T1-GE3, and 2N7002KT1G from Vishay Siliconix and onsemi are the primary direct equivalents. These parts maintain 60V Vdss rating, support 300mA to 320mA continuous drain current, and feature on-resistance values of 1.6Ω to 2Ω at 10V gate-source voltage. All three parts are packaged in SOT-23-3 configuration, ensuring mechanical compatibility. These devices are Active status products with full RoHS3 compliance and MSL 1 rating, matching the regulatory and environmental profile of the primary part.

Functional Equivalents (Current-Limited Applications):

The 2N7002E-T1-E3 (Vishay Siliconix) and 2N7002ET1G (onsemi) support 240mA and 260mA continuous drain current respectively. These parts are suitable for applications where the full 380mA capability of the primary part is not required. Both maintain 60V Vdss rating and feature on-resistance values of 2.5Ω to 3Ω at 10V. These devices are packaged in SOT-23-3 and maintain Active product status with full compliance certifications.

Lower Current Alternatives:

The 2N7002 (UMW) and 2N7002-TP (Micro Commercial Co) support only 115mA continuous drain current and are suitable only for low-current switching applications. These parts feature higher on-resistance values (5Ω to 7.5Ω) and reduced power dissipation ratings (200mW to 225mW). Selection of these parts requires verification that circuit current requirements do not exceed 115mA.

Extended Temperature Operation:

The 2N7002K (Good-Ark Semiconductor) extends the operating temperature range to 175°C, providing superior thermal margin for high-temperature environments. This part supports 300mA continuous drain current and features 0.3Ω on-resistance at 4.5V gate-source voltage, delivering lower power dissipation than the primary part.

Automotive-Grade Option:

The 2N7002K-AU_R1_000A2 (Panjit International Inc.) carries AEC-Q101 automotive qualification and is suitable for automotive and industrial applications requiring enhanced reliability documentation. This part supports 300mA continuous drain current with 3Ω on-resistance at 10V and 500mW power dissipation rating.

Frequently Asked Questions (FAQ)

Q: Can I substitute the 2N7002K-7 with a part rated for lower drain current, such as the 2N7002-TP (115mA)?

A: Substitution is permissible only if the circuit design operates at drain currents not exceeding 115mA. The 2N7002-TP is electrically compatible at lower current levels but cannot support the full 380mA capability of the primary part. Circuit analysis must confirm that maximum operating current remains below the substitute part's rating.

Q: What is the impact of higher on-resistance values in substitute parts?

A: On-resistance directly affects power dissipation according to the relationship P = I²R. A substitute part with 3Ω on-resistance dissipates 1.5 times more power than the primary part (2Ω) at equivalent current levels. For the 2N7002K-7 operating at 380mA, this results in approximately 289mW dissipation at 2Ω versus 434mW at 3Ω. Thermal management and PCB layout must accommodate the increased heat generation.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts use SOT-23-3 (TO-236, SC-59) or SOT-23 surface mount packaging, which share identical lead spacing and footprint dimensions. No PCB redesign is required for mechanical compatibility. However, thermal performance may vary due to differences in power dissipation ratings.

Q: Which substitute part offers the best on-resistance performance?

A: The 2N7002KT1G (onsemi) features the lowest on-resistance at 1.6Ω at 500mA and 10V gate-source voltage, resulting in the lowest power dissipation among all listed substitutes. This part supports 320mA continuous drain current and is packaged in SOT-23-3 configuration.

Q: Can I use the 2N7002K-AU_R1_000A2 in non-automotive applications?

A: Yes. The 2N7002K-AU_R1_000A2 carries AEC-Q101 automotive qualification, which represents enhanced reliability and traceability requirements. This part is fully compatible with non-automotive applications and offers superior documentation for applications requiring high reliability standards.

Q: What is the difference between the 2N7002K-T1-E3 and 2N7002K-T1-GE3?

A: Both parts are manufactured by Vishay Siliconix and feature identical electrical specifications: 60V Vdss, 300mA continuous drain current, 2Ω on-resistance at 10V, and SOT-23-3 packaging. The suffix designations (-E3 versus -GE3) indicate different manufacturing date codes or tape-and-reel configurations. Electrical performance and compatibility are equivalent.

Q: Is the extended temperature range of the 2N7002K (Good-Ark, -55°C to 175°C) necessary for my application?

A: Extended temperature operation is necessary only if the circuit operates in environments exceeding 150°C junction temperature. Standard-range parts (-55°C to 150°C) are sufficient for most consumer and industrial applications. Selection of extended-range parts should be based on documented thermal analysis confirming junction temperatures above 150°C.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The primary part specifies 0.3nC at 4.5V, while substitute parts range from 0.4nC to 0.81nC. Higher gate charge requires longer switching times and increased driver current capability. For applications using standard gate drivers, these differences are typically negligible. High-frequency switching applications (>1MHz) may require driver verification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification and MSL 1 (unlimited) moisture sensitivity rating, matching the primary part's environmental and regulatory status. No additional compliance documentation is required for substitution.

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