2N7002-G N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7002-G is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with a maximum continuous drain current of 115mA and 200mW power dissipation. The device is packaged in a surface mount SOT-23-3 configuration and is designated as Last Time Buy status, indicating production discontinuation. Identification of equivalent substitute parts is necessary to ensure design continuity and maintain supply chain reliability for applications currently utilizing this component.

Substiute Parts

2N7002-G

onsemiIn Stock: 23602N7002-G Datasheet

Current PartRFQ

2N7002

UMWIn Stock: 10002062N7002 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N7002-G is determined by electrical and mechanical parameter equivalence within the N-Channel MOSFET category. The critical parameters that define substitution eligibility are:

Electrical Parameters:

• Drain-to-Source Voltage (Vdss): 60V minimum
• Continuous Drain Current (Id): 115mA minimum
• Gate Threshold Voltage (Vgs(th)): 2.5V maximum
• Input Capacitance (Ciss): 50pF maximum
• Power Dissipation: 200mW minimum

Mechanical Parameters:

• Mounting Type: Surface Mount
• Package: SOT-23-3 (TO-236-3, SC-59)
• RoHS Compliance: ROHS3 Compliant
• Moisture Sensitivity Level: 1 (Unlimited)

Substitute parts must meet or exceed all specified electrical ratings and maintain identical mechanical compatibility. The 2N7002 base product number identifies the functional equivalent series across manufacturers.

Parameter Comparison

Engineering Selection Recommendations

The 2N7002 manufactured by UMW is a direct functional equivalent to the 2N7002-G. Both devices share identical electrical specifications for voltage rating, drain current, gate threshold voltage, and input capacitance. The UMW variant demonstrates improved performance characteristics with lower on-resistance (5Ohm versus 7.5Ohm at 500mA, 10V) and higher power dissipation rating (225mW versus 200mW), providing enhanced thermal margin and reduced conduction losses.

Both parts maintain ROHS3 compliance and MSL Level 1 rating, ensuring compatibility with standard surface mount assembly processes. The UMW 2N7002 is designated as Active product status with significantly higher inventory availability (1,000,100 pieces), providing supply chain continuity compared to the Last Time Buy status of the onsemi 2N7002-G.

Package designation differences (SOT-23 versus SOT-23-3) refer to the same physical form factor and pin configuration, with no impact on board-level compatibility or thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the UMW 2N7002 directly replace the onsemi 2N7002-G in existing designs?

A: Yes. Both devices are N-Channel MOSFETs with identical voltage ratings (60V Vdss), drain current specifications (115mA), gate threshold voltage (2.5V), and input capacitance (50pF). The UMW variant offers superior on-resistance and power dissipation ratings, making it functionally compatible and performance-equivalent for all applications currently using the 2N7002-G.

Q: What is the significance of the lower on-resistance in the UMW 2N7002?

A: The UMW 2N7002 exhibits 5Ohm maximum on-resistance compared to 7.5Ohm in the onsemi 2N7002-G at identical test conditions (500mA, 10V gate-source voltage). Lower on-resistance reduces conduction losses and heat generation, improving overall circuit efficiency and thermal performance without requiring design modifications.

Q: Are the SOT-23 and SOT-23-3 packages physically identical?

A: Yes. Both designations refer to the same three-pin surface mount package with identical pin spacing, footprint, and thermal characteristics. The nomenclature variations reflect different manufacturer documentation standards but represent the same physical component package.

Q: What is the impact of the higher power dissipation rating in the UMW device?

A: The UMW 2N7002 is rated for 225mW maximum power dissipation compared to 200mW in the onsemi 2N7002-G. This 12.5% increase in thermal capacity provides additional margin for transient power events and sustained operation in thermally constrained environments, enhancing design robustness without requiring circuit modifications.

Q: Are both devices suitable for high-frequency switching applications?

A: Yes. Both the 2N7002-G and UMW 2N7002 are specified with identical input capacitance (50pF maximum at 25V), enabling equivalent switching performance in high-frequency circuits. The lower on-resistance of the UMW variant provides additional benefit by reducing switching losses.

Q: What compliance certifications apply to both devices?

A: Both the onsemi 2N7002-G and UMW 2N7002 are ROHS3 compliant and REACH unaffected. Both devices carry MSL Level 1 (Unlimited) moisture sensitivity rating, permitting unrestricted storage and handling without desiccant requirements or time-limited shelf life constraints.

Q: Is there any difference in operating temperature range between the two devices?

A: The onsemi 2N7002-G specifies an operating temperature range of -55°C to 150°C. The UMW 2N7002 datasheet does not explicitly state a lower temperature limit in the provided specifications, though the maximum junction temperature is 150°C. For applications requiring confirmed operation below 0°C, verification against the complete UMW datasheet is necessary.