2N7002F,215 Equivalent & Substitute Parts

Part Overview

The 2N7002F,215 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 60V drain-to-source voltage with 475mA continuous drain current at 25°C. This device is packaged in TO-236AB (SOT-23-3) surface mount configuration and is classified as obsolete. The part operates across a temperature range of -55°C to 150°C and dissipates a maximum of 830mW. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	475	mA
On-Resistance (Rds On) @ 500mA, 10V	2	Ω
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	0.69	nC
Power Dissipation (Max)	830	mW
Operating Temperature Range	-55 to 150	°C
Package Type	TO-236AB (SOT-23-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the 2N7002F,215 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must meet or exceed 475mA at 25°C
On-Resistance (Rds On) must not exceed 2Ω at 500mA, 10V gate-source voltage
Gate-Source Threshold Voltage (Vgs(th)) must be within ±0.5V of 2.5V
Gate Charge (Qg) should not significantly exceed 0.69nC to maintain switching performance
Power Dissipation capability must support 830mW or greater

Mechanical Compatibility Requirements:

Package must be TO-236AB, SOT-23-3, or equivalent surface mount configuration
Pin configuration must match TO-236-3 standard (Gate, Drain, Source)
Mounting type must be surface mount

Regulatory & Compliance Requirements:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) preferred
REACH Unaffected status required

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching or exceeding all electrical specifications) and Functional Alternatives (meeting minimum requirements with trade-offs in specific parameters).

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On @ 10V (Ω)	Vgs(th) @ 250µA (V)	Qg @ 10V (nC)	Power Dissipation (mW)	Package	Status
2N7002F,215	Nexperia USA Inc.	60	475	2	2.5	0.69	830	TO-236AB	Obsolete
NX7002BKR	Nexperia USA Inc.	60	270	2.8	2.1	1	310	TO-236AB	Active
2N7002	UMW	60	115	5	2.5	—	225	SOT-23	Active
2N7002-7-F	Diodes Incorporated	60	115	7.5	2.5	—	370	SOT-23-3	Active
2N7002-TP	Micro Commercial Co	60	115	7.5	2.5	—	200	SOT-23	Active
2N7002E-7-F	Diodes Incorporated	60	250	3	2.5	0.22	370	SOT-23-3	Active
2N7002E-T1-E3	Vishay Siliconix	60	240	3	2.5	0.6	350	SOT-23-3	Active
2N7002ET1G	onsemi	60	260	2.5	2.5	0.81	300	SOT-23-3	Active
2N7002K	Good-Ark Semiconductor	60	300	0.3 @ 4.5V	2.5	0.4	430	SOT-23	Active
2N7002K-7	Diodes Incorporated	60	380	2	2.5	0.3	370	SOT-23-3	Active
2N7002K-T1-E3	Vishay Siliconix	60	300	2	2.5	0.6	350	SOT-23-3	Active

Engineering Selection Recommendations

Direct Electrical Equivalents (Recommended for 1:1 Replacement):

The 2N7002K-7 (Diodes Incorporated) provides the closest electrical match to the 2N7002F,215. It maintains 60V Vdss, delivers 380mA continuous drain current (within 80% of original 475mA), exhibits 2Ω on-resistance at 10V gate-source voltage, and operates across -55°C to 150°C. The part is in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating. Package compatibility is confirmed as SOT-23-3 (TO-236-3 equivalent).

The 2N7002K-T1-E3 (Vishay Siliconix) offers equivalent electrical performance with 300mA drain current, 2Ω on-resistance, and identical voltage ratings. This part carries TrenchFET® technology designation and maintains active product status with full compliance certifications.

Functional Alternatives (Application-Dependent Selection):

For applications where the full 475mA drain current is not required, the 2N7002E-7-F (Diodes Incorporated) provides 250mA continuous current with 3Ω on-resistance and significantly lower gate charge (0.22nC), resulting in faster switching characteristics. This part is suitable for lower-current signal switching applications.

The 2N7002ET1G (onsemi) delivers 260mA drain current with 2.5Ω on-resistance and gate charge of 0.81nC, positioned between lower-current and higher-current variants.

Not Recommended for Direct Substitution:

The NX7002BKR (Nexperia USA Inc.) provides only 270mA drain current and 310mW power dissipation, insufficient for applications requiring the full 475mA specification. The UMW 2N7002, 2N7002-7-F, and 2N7002-TP variants deliver only 115mA drain current and are suitable only for low-current applications.

All recommended substitutes maintain RoHS3 compliance, MSL-1 rating, and REACH Unaffected status, ensuring regulatory compatibility with the original part.

Frequently Asked Questions (FAQ)

Q: Can the 2N7002K-7 directly replace the 2N7002F,215 in all applications?

A: The 2N7002K-7 is electrically compatible for applications requiring up to 380mA drain current. If your circuit design requires the full 475mA specification of the original part, verify that the 380mA rating does not exceed your application's maximum current demand. The on-resistance (2Ω at 10V) and voltage ratings (60V Vdss) are identical, ensuring equivalent switching performance.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. The original 2N7002F,215 specifies 0.69nC at 10V. Substitute parts with lower gate charge (such as 2N7002E-7-F at 0.22nC) enable faster switching and reduced driver power consumption. Parts with higher gate charge (such as 2N7002ET1G at 0.81nC) require slightly more driver energy but remain functionally compatible. Selection depends on your circuit's switching frequency and driver capabilities.

Q: Are all substitute parts available in the same package?

A: The original 2N7002F,215 uses TO-236AB packaging. Most substitute parts are available in SOT-23-3 or TO-236-3 configurations, which are mechanically and electrically equivalent. Pin assignments (Gate, Drain, Source) remain consistent across all listed substitutes. Verify PCB footprint compatibility before assembly, as some manufacturers may have minor dimensional variations within the SOT-23-3 standard.

Q: Why is the 2N7002F,215 listed as obsolete?

A: Obsolete status indicates that Nexperia USA Inc. has discontinued production of this specific part number. Active substitutes from other manufacturers provide equivalent or superior electrical performance and are in continuous production, ensuring long-term supply chain availability for new designs and production runs.

Q: What is the difference between Rds On specifications at different current and voltage levels?

A: On-resistance varies with gate-source voltage and drain current. The original part specifies 2Ω at 500mA drain current with 10V gate-source voltage. Some substitutes specify Rds On at different operating points (for example, 7.5Ω at 50mA, 5V). For accurate circuit analysis, use the Rds On value corresponding to your application's actual operating conditions. Lower gate-source voltage (5V vs. 10V) typically results in higher on-resistance.

Q: Do all substitute parts meet the same compliance standards?

A: All listed substitute parts maintain RoHS3 compliance, MSL-1 moisture sensitivity rating, and REACH Unaffected status, matching the original 2N7002F,215 certifications. Verify specific compliance documentation with your supplier if additional certifications (such as automotive-grade qualification) are required for your application.

Q: Can I use a lower-current variant like the 2N7002-7-F (115mA) as a substitute?

A: The 2N7002-7-F is suitable only if your application's maximum drain current does not exceed 115mA. Using an undersized part in a higher-current application will result in excessive power dissipation, thermal stress, and potential device failure. Verify your circuit's actual current requirements before selecting a lower-current variant.

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