2N7002E N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7002E is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 340mA continuous drain current in a surface mount SOT-23-3 package. This device is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active manufacturers. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while preserving the SOT-23-3 package form factor for direct board-level replacement.

Key Parameters

Parameter	2N7002E (Vishay Siliconix)	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	340	mA
Power Dissipation (Max)	350	mW
Rds On (Max) @ 300mA, 10V	5	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 4.5V	0.6	nC
Input Capacitance (Ciss) @ 5V	21	pF
Operating Temperature (TJ)	150	°C
Package	SOT-23-3 (TO-236)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2N7002E is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Package: Must be SOT-23-3 (TO-236) for direct board replacement
Mounting Type: Surface Mount
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Performance Parameters (Allowable Variation):

Continuous Drain Current (Id): Substitute must support minimum 340mA or higher
Power Dissipation: Substitute must support minimum 350mW or higher
Rds On: Lower values are acceptable (improved performance)
Gate Threshold Voltage: Must remain within ±0.5V of 2.5V specification
Operating Temperature: Must support minimum 150°C junction temperature

Compliance Parameters:

RoHS3 Compliance required
MSL Rating 1 (Unlimited) required
REACH Unaffected status required

Substitute parts are grouped into two categories based on drain current capability: lower-current variants (115mA) suitable for applications not requiring full 340mA capacity, and higher-current variants (250mA–380mA) providing equal or superior current handling.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On (Ω)	Pd (mW)	Qg (nC)	Ciss (pF)	TJ (°C)	Status
2N7002E	Vishay Siliconix	60	340	5 @ 300mA, 10V	350	0.6 @ 4.5V	21 @ 5V	150	Discontinued
2N7002	UMW	60	115	5 @ 500mA, 10V	225	—	50 @ 25V	150	Active
2N7002-7-F	Diodes Incorporated	60	115	7.5 @ 50mA, 5V	370	—	50 @ 25V	150	Active
2N7002-TP	Micro Commercial Co	60	115	7.5 @ 500mA, 10V	200	—	50 @ 25V	150	Active
2N7002E-7-F	Diodes Incorporated	60	250	3 @ 250mA, 10V	370	0.22 @ 4.5V	50 @ 25V	150	Active
2N7002ET1G	onsemi	60	260	2.5 @ 240mA, 10V	300	0.81 @ 5V	26.7 @ 25V	150	Active
2N7002K	Good-Ark Semiconductor	60	300	0.3 @ 500mA, 4.5V	430	0.4 @ 4.5V	30 @ 25V	175	Active
2N7002K-7	Diodes Incorporated	60	380	2 @ 500mA, 10V	370	0.3 @ 4.5V	50 @ 25V	150	Active
2N7002KT1G	onsemi	60	320	1.6 @ 500mA, 10V	300	0.7 @ 4.5V	24.5 @ 20V	150	Active
2N7002L	onsemi	60	115	7.5 @ 500mA, 10V	200	—	50 @ 25V	150	Active
2N7002LT1G	onsemi	60	115	7.5 @ 500mA, 10V	225	—	50 @ 25V	150	Active

Engineering Selection Recommendations

Primary Substitutes (Direct Replacement Capability):

The 2N7002K-7 (Diodes Incorporated) and 2N7002KT1G (onsemi) provide the closest functional equivalence to the 2N7002E. Both devices maintain 60V Vdss rating, support drain currents exceeding the original 340mA specification (380mA and 320mA respectively), and are packaged in SOT-23-3. Both are RoHS3 compliant with MSL 1 rating and active product status. The 2N7002K-7 offers superior current handling at 380mA with 2Ω Rds On, while the 2N7002KT1G provides lower gate charge (0.7nC) and improved switching characteristics.

Secondary Substitutes (Current-Limited Applications):

For applications where the full 340mA drain current is not required, the 2N7002ET1G (onsemi) at 260mA and 2N7002K (Good-Ark Semiconductor) at 300mA provide active alternatives. The 2N7002K extends operating temperature to 175°C, offering enhanced thermal margin. Both maintain 60V Vdss and SOT-23-3 packaging with full compliance certifications.

Lower-Current Alternatives (115mA Variants):

The 2N7002-7-F (Diodes Incorporated), 2N7002-TP (Micro Commercial Co), 2N7002L (onsemi), and 2N7002LT1G (onsemi) are suitable only for applications with drain current requirements not exceeding 115mA. These variants maintain voltage and package specifications but provide reduced current capacity. Selection among these variants depends on specific Rds On and power dissipation requirements.

Compliance Verification:

All recommended substitutes maintain RoHS3 compliance, MSL 1 rating, and REACH Unaffected status, ensuring regulatory compatibility with the original 2N7002E specification.

Frequently Asked Questions (FAQ)

Q: Can the 2N7002E be directly replaced with any of the listed substitutes?

A: Direct replacement requires matching the SOT-23-3 package and 60V Vdss rating. The 2N7002K-7, 2N7002KT1G, 2N7002ET1G, and 2N7002K all meet these criteria. Lower-current variants (115mA) are physically compatible but electrically suitable only for applications not requiring the original 340mA capacity.

Q: What is the primary difference between the 2N7002K-7 and 2N7002KT1G?

A: Both support higher drain currents than the original 2N7002E. The 2N7002K-7 provides 380mA at 2Ω Rds On, while the 2N7002KT1G provides 320mA at 1.6Ω Rds On. The 2N7002KT1G exhibits lower gate charge (0.7nC vs. 0.3nC) and reduced input capacitance, resulting in faster switching response. Selection depends on whether maximum current capacity or switching speed is prioritized.

Q: Are the 115mA variants suitable replacements for the 340mA 2N7002E?

A: The 2N7002-7-F, 2N7002-TP, 2N7002L, and 2N7002LT1G are electrically and mechanically compatible but support only 115mA continuous drain current. These variants are appropriate only for circuits designed for lower current operation. Use in applications requiring 340mA will result in device thermal stress and potential failure.

Q: What compliance certifications are maintained across all substitutes?

A: All listed substitutes maintain RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity rating, and REACH Unaffected status, matching the original 2N7002E certifications.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines switching speed and driver circuit requirements. The 2N7002E specifies 0.6nC at 4.5V. Substitutes with lower gate charge (2N7002E-7-F at 0.22nC, 2N7002K-7 at 0.3nC) enable faster switching and reduced driver power consumption. Higher gate charge values require proportionally longer switching times.

Q: Can substitutes with higher power dissipation ratings be used in thermally constrained applications?

A: Higher power dissipation ratings indicate greater thermal capacity but do not reduce actual power dissipation in the circuit. Actual power dissipation depends on application current and Rds On characteristics. Devices with lower Rds On values (2N7002KT1G at 1.6Ω, 2N7002K-7 at 2Ω) generate less heat than the original 2N7002E (5Ω), improving thermal performance in current-limited applications.

Q: What is the significance of operating temperature range differences?

A: The 2N7002K specifies -55°C to 175°C junction temperature, exceeding the original 2N7002E specification of 150°C. This extended range provides additional thermal margin in high-temperature environments but does not affect performance in standard operating conditions.

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