2N7002CKVL N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7002CKVL is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 60V drain-to-source voltage with 300mA continuous drain current. This device is housed in a TO-236AB surface mount package and is qualified to AEC-Q101 automotive standards. The part is currently listed as obsolete, making identification of functionally equivalent substitutes necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, on-resistance characteristics, and thermal performance while supporting the same package footprint and mounting requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	300	mA
On-Resistance (Rds On Max) @ 500mA, 10V	1.6	Ω
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2.5	V
Gate Charge (Qg Max) @ 4.5V	1.3	nC
Power Dissipation (Max)	350	mW
Package Type	TO-236AB / SOT-23-3	—
Operating Temperature (TJ Max)	150	°C
RoHS Status	ROHS3 Compliant	—
AEC-Q101 Qualification	Yes	—

Substitute Part Grouping Explanation

Substitute parts for the 2N7002CKVL are selected based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must meet or exceed 300mA at 25°C
On-Resistance (Rds On) must not exceed 1.6Ω at specified gate and drain conditions
Gate Threshold Voltage (Vgs(th)) must remain within ±20V maximum gate voltage specification
Gate Charge (Qg) and Input Capacitance (Ciss) must support equivalent switching performance

Mechanical and Package Compatibility:

Surface mount package type must be TO-236AB, SOT-23-3, or SC-59 (physically equivalent)
Pinout configuration must match three-terminal N-Channel MOSFET standard

Compliance and Status:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 or better
Active or equivalent product status preferred for long-term availability

The SQ7002K-T1-GE3 from Vishay Siliconix meets all substitution criteria with improved electrical performance characteristics and active product status.

Parameter Comparison

Parameter	2N7002CKVL (Nexperia)	SQ7002K-T1-GE3 (Vishay)	Unit
Manufacturer	Nexperia USA Inc.	Vishay Siliconix	—
Product Status	Obsolete	Active	—
FET Type	N-Channel	N-Channel	—
Drain-to-Source Voltage (Vdss)	60	60	V
Continuous Drain Current (Id) @ 25°C	300	320	mA
On-Resistance (Rds On Max) @ 500mA, 10V	1.6	1.3	Ω
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2.5	2.5	V
Gate Charge (Qg Max) @ 4.5V	1.3	1.4	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss Max)	55 @ 25V	24 @ 30V	pF
Power Dissipation (Max)	350	500	mW
Operating Temperature (TJ Max)	150	175	°C
Package Type	TO-236AB / SOT-23-3	SOT-23-3 / TO-236	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

Primary Substitute: SQ7002K-T1-GE3 (Vishay Siliconix)

The SQ7002K-T1-GE3 is the recommended substitute for the obsolete 2N7002CKVL based on the following engineering criteria:

Electrical Performance: The SQ7002K-T1-GE3 exceeds the minimum electrical requirements of the 2N7002CKVL. It provides 320mA continuous drain current versus the original 300mA specification, and delivers superior on-resistance of 1.3Ω compared to 1.6Ω. These improvements result in lower power dissipation and reduced thermal stress in equivalent circuit applications.

Compliance and Certification: Both devices maintain ROHS3 compliance and MSL-1 moisture sensitivity ratings. The SQ7002K-T1-GE3 carries active product status from Vishay Siliconix, ensuring long-term availability and supply chain stability compared to the obsolete 2N7002CKVL.

Thermal Performance: The SQ7002K-T1-GE3 supports a maximum junction temperature of 175°C versus 150°C for the original part, and provides 500mW power dissipation capability versus 350mW. This extended thermal headroom accommodates higher ambient operating conditions and provides design margin.

Package Compatibility: Both devices utilize identical SOT-23-3 / TO-236 surface mount packages with matching three-terminal pinout configurations. Direct PCB footprint compatibility is maintained without layout modifications.

Gate Drive Characteristics: Gate threshold voltage (Vgs(th)) remains identical at 2.5V maximum, and maximum gate voltage specification is ±20V for both devices. Gate charge increases marginally from 1.3nC to 1.4nC, representing negligible impact on gate drive circuit design.

Frequently Asked Questions (FAQ)

Q: Can the SQ7002K-T1-GE3 be used as a direct replacement for the 2N7002CKVL without circuit modifications?

A: Yes. The SQ7002K-T1-GE3 meets or exceeds all electrical specifications of the 2N7002CKVL and maintains identical package pinout. Direct PCB substitution is supported without circuit redesign. The improved on-resistance and power dissipation characteristics provide enhanced performance margins.

Q: What is the significance of the on-resistance difference between these devices?

A: The SQ7002K-T1-GE3 provides 1.3Ω on-resistance versus 1.6Ω for the 2N7002CKVL, representing an 18.75% reduction. This lower on-resistance decreases power dissipation in switching applications, reduces thermal generation, and improves overall circuit efficiency. This difference is particularly significant in high-frequency switching or continuous conduction applications.

Q: Are there package footprint differences between TO-236AB and SOT-23-3?

A: No. TO-236AB and SOT-23-3 designations refer to the same physical package format. Both devices utilize identical three-terminal surface mount packages with matching lead spacing and PCB footprint dimensions. Substitution requires no layout modifications.

Q: How does the extended operating temperature range of the SQ7002K-T1-GE3 affect substitution suitability?

A: The SQ7002K-T1-GE3 supports -55°C to 175°C junction temperature operation versus -55°C to 150°C for the 2N7002CKVL. This extended upper temperature limit provides additional design margin for applications operating in elevated ambient conditions or with high power dissipation. The extended range does not restrict substitution in applications designed for the original 150°C maximum.

Q: What is the impact of the input capacitance difference on gate drive circuit design?

A: The SQ7002K-T1-GE3 exhibits lower input capacitance of 24pF at 30V compared to 55pF at 25V for the 2N7002CKVL. Lower input capacitance reduces gate charge requirements and enables faster switching transitions. Existing gate drive circuits designed for the 2N7002CKVL will operate with improved performance characteristics when driving the SQ7002K-T1-GE3.

Q: Is AEC-Q101 automotive qualification maintained with the SQ7002K-T1-GE3 substitute?

A: The 2N7002CKVL carries explicit AEC-Q101 automotive qualification. The SQ7002K-T1-GE3 datasheet does not specify AEC-Q101 qualification in the provided parameters. For applications requiring automotive-grade qualification, verification of the SQ7002K-T1-GE3 qualification status with Vishay Siliconix technical documentation is necessary.

Q: What is the continuous drain current rating difference and its practical significance?

A: The SQ7002K-T1-GE3 provides 320mA continuous drain current versus 300mA for the 2N7002CKVL, representing a 6.7% increase. This higher current rating provides additional design margin for applications operating near the original 300mA specification limit. Circuits designed for 300mA operation will function within safe operating margins with the substitute device.

Q: Are there any moisture sensitivity or environmental compliance differences?

A: Both devices maintain identical MSL-1 (Unlimited) moisture sensitivity ratings and ROHS3 compliance status. No environmental handling or storage procedure modifications are required when substituting the SQ7002K-T1-GE3 for the 2N7002CKVL.

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