2N7002AQ-13 Equivalent & Substitute Parts

Part Overview

The 2N7002AQ-13 is an N-Channel enhancement-mode MOSFET manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This device features a 60 V drain-to-source voltage rating with 180 mA continuous drain current capability in a surface-mount SOT-23-3 package. The part maintains active product status and carries automotive-grade qualification under AEC-Q101, making it suitable for automotive and industrial applications requiring reliable switching performance.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or when application parameters permit operation with devices offering enhanced electrical characteristics within the same package and voltage class.

Substiute Parts

2N7002AQ-13

Diodes IncorporatedIn Stock: 84702N7002AQ-13 Datasheet

Current PartRFQ

SN7002NH6327XTSA2

Infineon TechnologiesIn Stock: 95243SN7002NH6327XTSA2 Datasheet

DirectRFQ

2N7002K-AU_R1_000A2

Panjit International Inc.In Stock: 143822N7002K-AU_R1_000A2 Datasheet

MFR RecommendedRFQ

MMBF170LT1G

onsemiIn Stock: 89169MMBF170LT1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N7002AQ-13 is permissible when the following core electrical and mechanical parameters are maintained or exceeded:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Minimum 60 V
• Package Type: SOT-23-3 (TO-236-3, SC-59)
• Mounting Type: Surface Mount
• Gate-Source Voltage Range: ±20 V compatible
• Operating Temperature Range: -55°C to 150°C minimum
• RoHS3 Compliance: Required
• Moisture Sensitivity Level: MSL 1 (Unlimited)

Allowable Variation Parameters:

• Continuous Drain Current (Id): Equal to or greater than 180 mA
• Power Dissipation: Equal to or greater than 370 mW
• On-Resistance (Rds On): Equal to or lower values acceptable
• Input Capacitance (Ciss): Variation acceptable within application requirements
• Gate Threshold Voltage (Vgs(th)): Variation acceptable within application requirements

The identified substitute parts—SN7002NH6327XTSA2 (Infineon Technologies), 2N7002K-AU_R1_000A2 (Panjit International Inc.), and MMBF170LT1G (onsemi)—satisfy these substitution criteria while offering enhanced current-handling capability or improved on-resistance characteristics.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: SN7002NH6327XTSA2 (Infineon Technologies)

The SN7002NH6327XTSA2 serves as the primary direct substitute for the 2N7002AQ-13. Both devices maintain identical 60 V Vdss rating, equivalent on-resistance characteristics, and full AEC-Q101 automotive qualification. The Infineon part provides 200 mA continuous drain current, exceeding the 180 mA specification of the original part. Operating temperature range, gate voltage limits, and RoHS3 compliance are fully matched. This substitute is suitable for direct replacement in automotive and industrial switching applications.

Secondary Substitute: 2N7002K-AU_R1_000A2 (Panjit International Inc.)

The 2N7002K-AU_R1_000A2 offers enhanced performance characteristics with 300 mA continuous drain current and superior on-resistance of 3 Ω at 10 V Vgs. This part maintains AEC-Q101 qualification and full compliance with all environmental and regulatory requirements. The increased current capability and lower on-resistance make this substitute suitable for applications requiring improved thermal performance or higher switching currents within the same voltage class.

Tertiary Substitute: MMBF170LT1G (onsemi)

The MMBF170LT1G provides the highest continuous drain current rating at 500 mA, offering significant performance headroom for current-limited applications. However, this part does not carry AEC-Q101 automotive qualification. Selection of this substitute is restricted to non-automotive applications or where automotive qualification is not a design requirement. The device maintains 60 V Vdss rating, SOT-23-3 package compatibility, and RoHS3 compliance.

Selection Criteria:

For automotive applications requiring AEC-Q101 qualification, select either SN7002NH6327XTSA2 or 2N7002K-AU_R1_000A2. For non-automotive applications where higher current capability is beneficial, MMBF170LT1G is acceptable. All three substitutes maintain identical package footprint and mounting compatibility with the original 2N7002AQ-13.

Frequently Asked Questions (FAQ)

Q: Can the SN7002NH6327XTSA2 be used as a direct replacement for the 2N7002AQ-13 in automotive applications?

A: Yes. Both devices carry AEC-Q101 automotive qualification, maintain 60 V Vdss rating, and operate across the identical temperature range of -55°C to 150°C. The Infineon part provides 200 mA continuous drain current, which exceeds the 180 mA requirement of the original part. Pin configuration and SOT-23-3 package dimensions are compatible.

Q: What is the primary difference between the 2N7002K-AU_R1_000A2 and the original 2N7002AQ-13?

A: The Panjit part offers enhanced electrical performance with 300 mA continuous drain current (versus 180 mA) and lower on-resistance of 3 Ω at 10 V Vgs (versus 5 Ω). Both maintain 60 V Vdss rating and AEC-Q101 qualification. The increased current capability results in lower power dissipation in high-current switching scenarios.

Q: Is the MMBF170LT1G suitable for automotive applications?

A: The MMBF170LT1G does not carry AEC-Q101 automotive qualification. This part is suitable only for non-automotive industrial and consumer applications. For automotive designs, select either the SN7002NH6327XTSA2 or 2N7002K-AU_R1_000A2.

Q: Are all substitute parts available in the same SOT-23-3 package?

A: Yes. All substitute parts utilize SOT-23-3 (TO-236-3, SC-59) surface-mount packaging. PCB footprint and reflow soldering parameters are compatible with the original 2N7002AQ-13 design.

Q: What is the maximum gate-source voltage for all listed parts?

A: All parts, including the original 2N7002AQ-13 and all substitutes, support a maximum gate-source voltage of ±20 V. Gate drive circuits and control logic are fully compatible across all listed devices.

Q: Can the MMBF170LT1G handle the same power dissipation as the 2N7002AQ-13?

A: The MMBF170LT1G has a maximum power dissipation rating of 225 mW, which is lower than the 2N7002AQ-13 rating of 370 mW. However, the higher continuous drain current (500 mA) and lower on-resistance result in reduced power dissipation in typical switching applications. Thermal analysis is required for high-frequency or continuous conduction scenarios.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts—SN7002NH6327XTSA2, 2N7002K-AU_R1_000A2, and MMBF170LT1G—are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the environmental compliance of the original 2N7002AQ-13.

Q: What is the gate threshold voltage variation among the substitute parts?

A: Gate threshold voltage (Vgs(th)) varies across the substitute parts: 2N7002AQ-13 at 2 V @ 250 µA, SN7002NH6327XTSA2 at 1.8 V @ 26 µA, 2N7002K-AU_R1_000A2 at 2.5 V @ 250 µA, and MMBF170LT1G at 3 V @ 1 mA. Gate drive voltage must be selected to ensure reliable switching across all devices in a design.