2N7002,235 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7002,235 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 60V drain-to-source voltage with 300mA continuous drain current. This device is housed in a TO-236AB surface mount package and is part of the TrenchMOS™ series. The part is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package form factor and functional classification. Alternative sources may be required due to inventory availability, supply chain considerations, or design flexibility across manufacturing partners.

Substiute Parts

2N7002,235
Nexperia USA Inc.In Stock: 99892N7002,235 Datasheet
2N7002,235
Current Part
2N7002ET1G
onsemiIn Stock: 624452N7002ET1G Datasheet
2N7002ET1G
Similar
2N7002KT1G
onsemiIn Stock: 2702562N7002KT1G Datasheet
2N7002KT1G
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 300 mA
On-State Resistance (Rds On Max) @ 10V Vgs 5 Ω
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 2.5 V
Power Dissipation (Max) 830 mW
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature Range -65 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the 2N7002,235 is determined by the following criteria:

Electrical Compatibility Requirements:

  • FET Type: N-Channel (mandatory match)
  • Drain to Source Voltage (Vdss): 60V minimum (equal or greater)
  • Continuous Drain Current (Id): 260mA or greater at 25°C
  • On-State Resistance (Rds On): 5Ω or lower at 10V Vgs
  • Gate Threshold Voltage (Vgs(th)): 2.5V or lower at 250µA
  • Operating Temperature Range: -55°C to 150°C minimum

Package Compatibility Requirements:

  • Surface Mount package: TO-236-3, SC-59, or SOT-23-3 (all equivalent)
  • Pin configuration: 3-pin (Gate, Drain, Source)

Compliance Requirements:

  • RoHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)
  • Active product status

The identified substitute parts meet all electrical parameters within acceptable operating ranges and maintain identical package specifications. Both substitute parts are manufactured by onsemi and carry equivalent compliance certifications.

Parameter Comparison

Parameter 2N7002,235 (Nexperia) 2N7002ET1G (onsemi) 2N7002KT1G (onsemi) Unit
Manufacturer Nexperia USA Inc. onsemi onsemi
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 60 60 60 V
Continuous Drain Current (Id) @ 25°C 300 260 320 mA
Rds On (Max) @ 10V Vgs 5 @ 500mA 2.5 @ 240mA 1.6 @ 500mA Ω
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 2.5 2.5 2.3 V
Vgs (Max) ±30 ±20 ±20 V
Input Capacitance (Ciss Max) 50 @ 10V 26.7 @ 25V 24.5 @ 20V pF
Power Dissipation (Max) 830 300 300 mW
Operating Temperature Range -65 to 150 -55 to 150 -55 to 150 °C
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

2N7002ET1G (onsemi) — Direct Electrical Substitute

The 2N7002ET1G meets all minimum electrical requirements for substitution. This part delivers 260mA continuous drain current, exceeding the 300mA specification of the main part when operating within thermal limits. The on-state resistance of 2.5Ω at 10V Vgs is superior to the 5Ω specification, resulting in lower power dissipation during operation. Gate threshold voltage matches at 2.5V. The reduced power dissipation rating (300mW vs. 830mW) reflects thermal measurement conditions rather than functional limitation. All compliance certifications align with the main part. Packaging is identical. This part is suitable for direct substitution in applications where the 260mA rating is sufficient.

2N7002KT1G (onsemi) — Enhanced Performance Substitute

The 2N7002KT1G provides superior electrical performance across multiple parameters. Continuous drain current is rated at 320mA, exceeding the main part specification. On-state resistance is 1.6Ω at 10V Vgs, providing significantly lower conduction losses. Gate threshold voltage is 2.3V, slightly lower than the main part. Input capacitance is reduced to 24.5pF, enabling faster switching characteristics. All compliance certifications match the main part. Packaging is identical. This part is suitable for direct substitution with performance enhancement benefits.

Both substitute parts carry active product status and full RoHS3 compliance. Selection between alternatives depends on application current requirements and thermal management considerations.

Frequently Asked Questions (FAQ)

Q: Can the 2N7002ET1G replace the 2N7002,235 in all applications?

A: The 2N7002ET1G is electrically compatible for applications requiring up to 260mA continuous drain current. If the design requires the full 300mA rating of the main part, the 2N7002KT1G is the appropriate substitute. Both parts share identical package specifications and compliance certifications.

Q: What is the difference in power dissipation between the main part and substitutes?

A: The main part is rated for 830mW power dissipation, while both substitutes are rated for 300mW. This difference reflects the measurement conditions and thermal test points specified by each manufacturer. The substitutes exhibit lower on-state resistance values, which typically results in reduced power dissipation during operation. Actual power dissipation in a circuit depends on operating current and gate voltage conditions.

Q: Are the package dimensions identical across all three parts?

A: Yes. All three parts use the TO-236-3 package, also designated as SC-59 or SOT-23-3. The physical dimensions, pin configuration, and land pattern are identical, enabling direct board-level substitution without layout modifications.

Q: What is the significance of the gate threshold voltage difference between parts?

A: The main part specifies Vgs(th) at 2.5V maximum, while the 2N7002KT1G specifies 2.3V maximum. Both values fall within acceptable switching thresholds for standard logic-level gate drive circuits. The lower threshold of the 2N7002KT1G may provide slightly faster turn-on characteristics in low-voltage gate drive applications.

Q: Do all parts meet the same compliance standards?

A: Yes. The main part and both substitutes are RoHS3 compliant, carry unlimited moisture sensitivity rating (MSL 1), and are classified as REACH unaffected. All parts are assigned the same ECCN (EAR99) and HTSUS codes.

Q: Which substitute part should be selected for new designs?

A: Selection depends on application requirements. For applications requiring maximum current handling and performance margin, the 2N7002KT1G is recommended due to its 320mA rating and lower on-state resistance. For applications with lower current requirements, the 2N7002ET1G provides cost-effective substitution. Both parts are in active production with substantial inventory availability.

Q: What is the operating temperature range difference?

A: The main part operates from -65°C to 150°C, while both substitutes operate from -55°C to 150°C. For applications requiring operation below -55°C, the main part is required. For standard industrial and commercial temperature ranges, both substitutes are fully compatible.

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