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2N7002 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The 2N7002 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage with 200mA continuous drain current in a surface mount SOT-23-3 package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for new designs and production continuity. The 2N7002 serves in general-purpose switching and amplification applications where low-voltage, low-current MOSFET functionality is required.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 200 | mA |
| On-State Resistance (Rds On) @ 500mA, 10V | 5 | Ω |
| Gate-Source Threshold Voltage (Vgs(th)) @ 250µA | 3 | V |
| Power Dissipation (Max) | 350 | mW |
| Operating Temperature Range | −55 to 150 | °C |
| Package Type | SOT-23-3 | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the 2N7002 is determined by the following critical parameters:
Voltage Rating: All substitute parts maintain the 60V Vdss specification, ensuring compatibility with circuit voltage requirements.
Package Type: All substitutes use SOT-23-3 or equivalent TO-236-3 surface mount packages, maintaining mechanical and thermal interface compatibility.
Drain Current Capability: Substitute parts range from 115mA to 320mA continuous drain current. Parts with equal or greater current ratings (115mA minimum) are direct substitutes for the 200mA specification.
On-State Resistance (Rds On): Substitute parts maintain Rds On values between 1.6Ω and 7.5Ω at specified gate-source voltages, ensuring switching performance compatibility.
Gate Threshold Voltage (Vgs(th)): All substitutes operate within 2V to 3V threshold range, maintaining gate drive compatibility.
Temperature Range: All substitutes support the −55°C to 150°C operating range or extended ranges, ensuring thermal compatibility.
Compliance: All substitutes are ROHS3 compliant and REACH unaffected, matching the original part's regulatory status.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vdss (V) | Id @ 25°C (mA) | Rds On @ 10V (Ω) | Vgs(th) @ 250µA (V) | Power Dissipation (mW) | Package | Product Status |
|---|---|---|---|---|---|---|---|---|
| 2N7002 | STMicroelectronics | 60 | 200 | 5 | 3 | 350 | SOT-23-3 | Obsolete |
| 2N7002 | UMW | 60 | 115 | 5 | 2.5 | 225 | SOT-23 | Active |
| 2N7002-TP | Micro Commercial Co | 60 | 115 | 7.5 | 2.5 | 200 | SOT-23 | Active |
| 2N7002KT1G | onsemi | 60 | 320 | 1.6 | 2.3 | 300 | SOT-23-3 | Active |
| 2N7002AQ-7 | Diodes Incorporated | 60 | 180 | 5 | 2 | 370 | SOT-23-3 | Active |
| 2N7002,215 | Nexperia USA Inc. | 60 | 300 | 5 | 2.5 | 830 | TO-236AB | Active |
| 2N7002-7-F | Diodes Incorporated | 60 | 115 | 7.5 | 2.5 | 370 | SOT-23-3 | Active |
| 2N7002E-7-F | Diodes Incorporated | 60 | 250 | 3 | 2.5 | 370 | SOT-23-3 | Active |
| 2N7002E-T1-E3 | Vishay Siliconix | 60 | 240 | 3 | 2.5 | 350 | SOT-23-3 | Active |
| 2N7002ET1G | onsemi | 60 | 260 | 2.5 | 2.5 | 300 | SOT-23-3 | Active |
| 2N7002K | Good-Ark Semiconductor | 60 | 300 | 0.3 @ 4.5V | 2.5 | 430 | SOT-23 | Active |
Engineering Selection Recommendations
Direct Substitutes (Equivalent Current Rating):
The 2N7002AQ-7 (Diodes Incorporated) provides the closest electrical match with 180mA continuous drain current, 5Ω on-state resistance, and 370mW power dissipation. This part is AEC-Q101 qualified for automotive applications and maintains active product status.
The 2N7002E-7-F (Diodes Incorporated) offers 250mA drain current with improved 3Ω on-state resistance and maintains the 370mW power dissipation specification. This part is suitable for applications requiring lower on-state losses.
The 2N7002E-T1-E3 (Vishay Siliconix) provides 240mA drain current with 3Ω on-state resistance and 350mW power dissipation, matching the original power specification closely.
Higher Current Capability Substitutes:
The 2N7002KT1G (onsemi) delivers 320mA continuous drain current with superior 1.6Ω on-state resistance, enabling applications requiring higher current handling or lower power dissipation.
The 2N7002ET1G (onsemi) provides 260mA drain current with 2.5Ω on-state resistance and 300mW power dissipation, offering improved switching performance.
The 2N7002,215 (Nexperia USA Inc.) supports 300mA drain current with 5Ω on-state resistance but exhibits elevated 830mW power dissipation, suitable only for applications with adequate thermal management.
Lower Current Substitutes:
The 2N7002 (UMW) and 2N7002-TP (Micro Commercial Co) both provide 115mA drain current ratings. These parts are suitable for applications where the original 200mA specification exceeds circuit requirements.
All listed substitutes maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with the original part.
Frequently Asked Questions (FAQ)
Q: Can the 2N7002AQ-7 replace the original STMicroelectronics 2N7002 in all applications?
A: The 2N7002AQ-7 is compatible with applications rated for 180mA or less continuous drain current. The 5Ω on-state resistance and 370mW power dissipation match the original specification. Verify circuit current requirements before substitution.
Q: What is the difference between SOT-23 and SOT-23-3 packages?
A: Both designations refer to the same three-terminal surface mount package (TO-236-3, SC-59). The packages are mechanically and electrically identical for MOSFET applications.
Q: Which substitute offers the best on-state resistance performance?
A: The 2N7002K (Good-Ark Semiconductor) provides the lowest on-state resistance at 0.3Ω at 4.5V gate-source voltage, followed by the 2N7002KT1G (onsemi) at 1.6Ω and the 2N7002ET1G (onsemi) at 2.5Ω.
Q: Are all substitutes suitable for automotive applications?
A: The 2N7002AQ-7 (Diodes Incorporated) carries AEC-Q101 automotive qualification. Other substitutes are industrial-grade components. Automotive applications require the AEC-Q101 qualified part.
Q: What is the minimum drain current rating acceptable for substitution?
A: Substitute parts must support at least 115mA continuous drain current to maintain compatibility with the original 200mA specification. Parts rated below this threshold are not suitable direct replacements.
Q: How do gate threshold voltage differences affect circuit operation?
A: The original part specifies 3V gate threshold voltage, while most substitutes operate at 2V to 2.5V. Lower threshold voltages enable faster switching at reduced gate drive voltages. Verify gate drive circuit compatibility before substitution.
Q: Which substitute provides the closest thermal performance match?
A: The 2N7002E-T1-E3 (Vishay Siliconix) and the original STMicroelectronics 2N7002 both specify 350mW power dissipation, providing equivalent thermal characteristics.
Q: Can I use the 2N7002,215 in high-current applications?
A: The 2N7002,215 supports 300mA drain current but exhibits 830mW power dissipation, significantly higher than the original 350mW specification. Use only in applications with adequate thermal management or where elevated dissipation is acceptable.
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